component
SM4807PRL
Public Made by Adomby adom
SPS MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSM4807PRL
SPS · MOSFETs · SOIC-8
SM4807PRL from SPS, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source of MOSFET 2 (P-channel); drain-source voltage rated -30V. |
| 2 | G2 | input | Gate of MOSFET 2; gate-source voltage max ±20V, threshold VGS(th) -1.2 to -2.4V typ -1.8V. |
| 3 | S1 | passive | Source of MOSFET 1 (P-channel); drain-source voltage rated -30V. |
| 4 | G1 | input | Gate of MOSFET 1; gate-source voltage max ±20V, threshold VGS(th) -1.2 to -2.4V typ -1.8V. |
| 5 | D1 | passive | Drain of MOSFET 1; continuous drain current -6.0A at TA=25°C, pulsed -9.6A. |
| 6 | D1 | passive | Drain of MOSFET 1; continuous drain current -6.0A at TA=25°C, pulsed -9.6A. |
| 7 | D2 | passive | Drain of MOSFET 2; continuous drain current -6.0A at TA=25°C, pulsed -9.6A. |
| 8 | D2 | passive | Drain of MOSFET 2; continuous drain current -6.0A at TA=25°C, pulsed -9.6A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SPS |
| Package | SOIC-8 |
| Category | Transistors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -6 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | -5 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | -9.6 | A | 1 | |||
| Avalanche Current | IAR | -1.9 | A | 1 | |||
| Repetitive avalanche energy | EAR | -4.4 | mJ | L=0.1mH | 1 | ||
| Power Dissipation | PD | 2 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 1.3 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient | RθJA | 145 | 217 | °C/W | t ≤ 10s | 1 | |
| Junction-to-Ambient | RθJA | 290 | 348 | °C/W | Steady State | 1 | |
| Junction-to-Lead | RθJL | 87 | 139 | °C/W | Steady State | 1 | |
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | ID = -250uA, VGS = 0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | uA | VDS=-30V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -5 | uA | VDS=-30V, VGS=0V | 2 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.8 | -2.4 | V | VDS = VGS, ID = 250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 40.6 | 58 | mΩ | VGS=-10V, ID=-6A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 63.8 | 82.9 | mΩ | VGS=-4.5V, ID=-6A | 2 | |
| Forward Transconductance | gFS | 48 | S | VDS=-5V, ID=-6A | 2 | ||
| Diode Forward Voltage | VSD | -0.72 | -1 | V | IS=-1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | -6 | A | 2 | |||
| Input Capacitance | Ciss | 760 | 927 | pF | VGS=0V, VDS=-15V, f=1MHz | 2 | |
| Output Capacitance | Coss | 140 | 172 | pF | VGS=0V, VDS=-15V, f=1MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 95 | 113 | pF | VGS=0V, VDS=-15V, f=1MHz | 2 | |
| Gate resistance | Rg | 1.6 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 | ||
| Total Gate Charge (10V) | Qg (10V) | 6.7 | nC | VGS=-10V, VDS=-15V, ID=-6A | 2 | ||
| Total Gate Charge (4.5V) | Qg (4.5V) | 3.35 | nC | VGS=-10V, VDS=-15V, ID=-6A | 2 | ||
| Gate Source Charge | Qgs | 2.24 | nC | VGS=-10V, VDS=-15V, ID=-6A | 2 | ||
| Gate Drain Charge | Qgd | 3.2 | nC | VGS=-10V, VDS=-15V, ID=-6A | 2 | ||
| Turn-On DelayTime | tD(on) | 7.5 | ns | VGS=-10V, VDS=-15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Turn-On Rise Time | tr | 6 | ns | VGS=-10V, VDS=-15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Turn-Off DelayTime | tD(off) | 21 | ns | VGS=-10V, VDS=-15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 6.75 | ns | VGS=-10V, VDS=-15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Body Diode Reverse Recovery Time | trr | 15 | ns | IF=-8A, dI/dt=500A/µs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 9.7 | nC | IF=18A, dI/dt=500A/µs | 2 |
CAD (KiCad official)
- Symbol:
SM4807PRL - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
sm4807prl-etched.step/sm4807prl-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sm4807prl.step/sm4807prl.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SPS datasheet (4 pp, sha256
b913482c37921171, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).