component
SM4620PRL
Public Made by Adomby adom
SPS MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SM4620PRL
SPS · MOSFETs · SOP-8
SM4620PRL from SPS, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source of the N-channel MOSFET (channel 2), rated VDS 30 V and ID 6 A at TA=25°C. |
| 2 | G2 | input | Gate of the N-channel MOSFET (channel 2), with a maximum gate-source voltage of 20 V. |
| 3 | S1 | passive | Source of the P-channel MOSFET (channel 1), rated VDS -30 V and ID -5.3 A at TA=25°C. |
| 4 | G1 | input | Gate of the P-channel MOSFET (channel 1), with a maximum gate-source voltage of 20 V. |
| 5 | D1 | passive | Drain of the P-channel MOSFET (channel 1), tied internally to pins 5 and 6, rated VDS -30 V. |
| 6 | D1 | passive | Drain of the P-channel MOSFET (channel 1), tied internally to pins 5 and 6, rated VDS -30 V. |
| 7 | D2 | passive | Drain of the N-channel MOSFET (channel 2), tied internally to pins 7 and 8, rated VDS 30 V. |
| 8 | D2 | passive | Drain of the N-channel MOSFET (channel 2), tied internally to pins 7 and 8, rated VDS 30 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SPS |
| Package | SOP-8 |
| Category | Transistors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-channel) | VDS | 30 | V | P-channel: -30 | 1 | ||
| Gate-Source Voltage | VGS | 20 | V | ±V; N and P channel both 20 | 1 | ||
| Continuous Drain Current | ID | 6 | A | TA=25°C; P-channel -5.3 | 1 | ||
| Continuous Drain Current | ID | 5 | A | TA=70°C; P-channel -4.5 | 1 | ||
| Pulsed Drain Current | IDM | 9.6 | A | P-channel -8.5 | 1 | ||
| Avalanche Current | IAR | 1.92 | A | P-channel -1.7 | 1 | ||
| Repetitive avalanche energy | EAR | 4.416 | mJ | L=0.1mH; P-channel -3.9 | 1 | ||
| Power Dissipation | PD | 2 | W | TA=25°C; P-channel 2 | 1 | ||
| Power Dissipation | PD | 1.3 | W | TA=70°C; P-channel 1.44 | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RθJA | 105 | 157 | °C/W | t ≤ 10s | 1 | |
| Maximum Junction-to-Ambient | RθJA | 210 | 252 | °C/W | Steady State | 1 | |
| Maximum Junction-to-Lead | RθJL | 63 | 100 | °C/W | Steady State | 1 | |
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | ID = -250uA, VGS = 0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | 5 | uA | VDS=30V, VGS=0V | 2 | |
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.8 | 2.4 | V | VDS = VGS ID = 250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 29.4 | 42 | mΩ | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 46.2 | 60.1 | mΩ | VGS=4.5V, ID=6A | 2 | |
| Diode Forward Voltage | VSD | 0.72 | 1 | V | IS=1A,VGS=18V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 6 | A | 2 | |||
| Input Capacitance | Ciss | 255 | 311 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | |
| Output Capacitance | Coss | 45 | 55 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 35 | 41 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | |
| Forward Transconductance | gFS | 83 | S | VDS=5V, ID=6A | 2 | ||
| Gate resistance | Rg | 0.65 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 | ||
| Total Gate Charge (10V) | Qg | 2.55 | nC | VGS=10V, VDS=15V, ID=6A | 2 | ||
| Body Diode Reverse Recovery Time | trr | 8.5 | ns | IF=-8A, dI/dt=500A/µs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 2.2 | nC | IF=18A, dI/dt=500A/µs | 2 |
CAD (KiCad official)
- Symbol:
SM4620PRL - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
sm4620prl-etched.step/sm4620prl-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sm4620prl.step/sm4620prl.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SPS datasheet (4 pp, sha256
80b0a6a40f91f306, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SM4620PRL
**SPS** · MOSFETs · SOP-8
SM4620PRL from SPS, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source of the N-channel MOSFET (channel 2), rated VDS 30 V and ID 6 A at TA=25°C. |
| 2 | G2 | input | Gate of the N-channel MOSFET (channel 2), with a maximum gate-source voltage of 20 V. |
| 3 | S1 | passive | Source of the P-channel MOSFET (channel 1), rated VDS -30 V and ID -5.3 A at TA=25°C. |
| 4 | G1 | input | Gate of the P-channel MOSFET (channel 1), with a maximum gate-source voltage of 20 V. |
| 5 | D1 | passive | Drain of the P-channel MOSFET (channel 1), tied internally to pins 5 and 6, rated VDS -30 V. |
| 6 | D1 | passive | Drain of the P-channel MOSFET (channel 1), tied internally to pins 5 and 6, rated VDS -30 V. |
| 7 | D2 | passive | Drain of the N-channel MOSFET (channel 2), tied internally to pins 7 and 8, rated VDS 30 V. |
| 8 | D2 | passive | Drain of the N-channel MOSFET (channel 2), tied internally to pins 7 and 8, rated VDS 30 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SPS |
| Package | SOP-8 |
| Category | Transistors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-channel) | VDS | | | 30 | V | P-channel: -30 | 1 |
| Gate-Source Voltage | VGS | | | 20 | V | ±V; N and P channel both 20 | 1 |
| Continuous Drain Current | ID | | | 6 | A | TA=25°C; P-channel -5.3 | 1 |
| Continuous Drain Current | ID | | | 5 | A | TA=70°C; P-channel -4.5 | 1 |
| Pulsed Drain Current | IDM | | | 9.6 | A | P-channel -8.5 | 1 |
| Avalanche Current | IAR | | | 1.92 | A | P-channel -1.7 | 1 |
| Repetitive avalanche energy | EAR | | | 4.416 | mJ | L=0.1mH; P-channel -3.9 | 1 |
| Power Dissipation | PD | | | 2 | W | TA=25°C; P-channel 2 | 1 |
| Power Dissipation | PD | | | 1.3 | W | TA=70°C; P-channel 1.44 | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient | RθJA | | 105 | 157 | °C/W | t ≤ 10s | 1 |
| Maximum Junction-to-Ambient | RθJA | | 210 | 252 | °C/W | Steady State | 1 |
| Maximum Junction-to-Lead | RθJL | | 63 | 100 | °C/W | Steady State | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | ID = -250uA, VGS = 0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | 1 | 5 | uA | VDS=30V, VGS=0V | 2 |
| Gate-Body leakage current | IGSS | -100 | | 100 | nA | VDS = 0V, VGS = ±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.8 | 2.4 | V | VDS = VGS ID = 250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 29.4 | 42 | mΩ | | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 46.2 | 60.1 | mΩ | VGS=4.5V, ID=6A | 2 |
| Diode Forward Voltage | VSD | | 0.72 | 1 | V | IS=1A,VGS=18V | 2 |
| Maximum Body-Diode Continuous Current | IS | | | 6 | A | | 2 |
| Input Capacitance | Ciss | | 255 | 311 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Output Capacitance | Coss | | 45 | 55 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 35 | 41 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Forward Transconductance | gFS | | 83 | | S | VDS=5V, ID=6A | 2 |
| Gate resistance | Rg | | 0.65 | | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge (10V) | Qg | | 2.55 | | nC | VGS=10V, VDS=15V, ID=6A | 2 |
| Body Diode Reverse Recovery Time | trr | | 8.5 | | ns | IF=-8A, dI/dt=500A/µs | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 2.2 | | nC | IF=18A, dI/dt=500A/µs | 2 |
## CAD (KiCad official)
- Symbol: `SM4620PRL`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `sm4620prl-etched.step` / `sm4620prl-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sm4620prl.step` / `sm4620prl.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [SPS datasheet](docs/sm4620prl-datasheet.pdf) (4 pp, sha256 `80b0a6a40f91f306`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sm4620prl-datasheet.pdf)