# SM4616PRL

**SPS** · MOSFETs · SOIC-8

SM4616PRL from SPS, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source of the N-channel MOSFET (symbol labels the N-channel device as G2/S2/D2). |
| 2 | G2 | input | Gate of the N-channel MOSFET, with maximum gate-source voltage of 20 V (±V). |
| 3 | S1 | passive | Source of the P-channel MOSFET (symbol labels the P-channel device as G1/S1/D1). |
| 4 | G1 | input | Gate of the P-channel MOSFET, with maximum gate-source voltage of 20 V (±V). |
| 5 | D1 | passive | Drain of the P-channel MOSFET, rated -30 V drain-source, shorted externally to pins 6. |
| 6 | D1 | passive | Drain of the P-channel MOSFET, rated -30 V drain-source, common with pin 5. |
| 7 | D2 | passive | Drain of the N-channel MOSFET, rated 30 V drain-source, common with pin 8. |
| 8 | D2 | passive | Drain of the N-channel MOSFET, rated 30 V drain-source, common with pin 7. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | SPS |
| Package | SOIC-8 |
| Category | Transistors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | ID = -250uA, VGS = 0V | 2 |
| Gate-Body leakage current | IGSS | -100 |  | 100 | nA | VDS = 0V, VGS = ±20V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | uA | VDS=30V, VGS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.8 | 2.4 | V | VDS = VGS ID = 250µA | 2 |
| Static Drain-Source On-Resistance (first row) | RDS(ON) |  | 14 | 20 | mΩ |  | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 18 | 23.4 | mΩ | VGS=4.5V, ID=8.5A | 2 |
| Diode Forward Voltage | VSD |  | 0.72 | 1 | V | IS=1A,VGS=41V | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | 8.5 | A |  | 2 |
| Input Capacitance | Ciss |  | 740 | 902 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Output Capacitance | Coss |  | 110 | 135 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 82 | 97 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Drain-Source Voltage (N-channel) | VDS |  |  | 30 | V | N-channel | 1 |
| Drain-Source Voltage (P-channel) | VDS |  |  | -30 | V | P-channel | 1 |
| Gate-Source Voltage | VGS |  |  | 20 | V | ±, both channels | 1 |
| Continuous Drain Current (N-channel) | ID |  |  | 10 | A | TA=25°C, N-channel | 1 |
| Continuous Drain Current (N-channel) | ID |  |  | 8 | A | TA=70°C, N-channel | 1 |
| Continuous Drain Current (P-channel) | ID |  |  | -8 | A | TA=25°C, P-channel | 1 |
| Continuous Drain Current (P-channel) | ID |  |  | -6 | A | TA=70°C, P-channel | 1 |
| Pulsed Drain Current (N-channel) | IDM |  |  | 16 | A | N-channel | 1 |
| Pulsed Drain Current (P-channel) | IDM |  |  | -12.8 | A | P-channel | 1 |
| Avalanche Current (N-channel) | IAR |  |  | 3.2 | A | N-channel | 1 |
| Avalanche Current (P-channel) | IAR |  |  | -2.6 | A | P-channel | 1 |
| Repetitive avalanche energy (N-channel) | EAR |  |  | 7.36 | mJ | L=0.1mH, N-channel | 1 |
| Repetitive avalanche energy (P-channel) | EAR |  |  | -5.9 | mJ | L=0.1mH, P-channel | 1 |
| Power Dissipation | PD |  |  | 2 | W | TA=25°C, both channels | 1 |
| Power Dissipation | PD |  |  | 1.3 | W | TA=70°C, both channels | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Maximum Junction-to-Ambient | RθJA |  | 70 | 105 | °C/W | t ≤ 10s | 1 |
| Maximum Junction-to-Ambient | RθJA |  | 140 | 168 | °C/W | Steady State | 1 |
| Maximum Junction-to-Lead | RθJL |  | 42 | 67 | °C/W | Steady State | 1 |
| Forward Transconductance | gFS |  | 46 |  | S | VDS=5V, ID=8.5A | 2 |
| Gate resistance | Rg |  | 1.5 |  | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge (10V) | Qg (10V) |  | 7.5 |  | nC | VGS=10V, VDS=15V, ID=8.5A | 2 |
| Total Gate Charge (4.5V) | Qg |  | 3.75 |  | nC | VGS=10V, VDS=15V, ID=8.5A | 2 |
| Gate Source Charge | Qgs |  | 2.1 |  | nC | VGS=10V, VDS=15V, ID=8.5A | 2 |
| Gate Drain Charge | Qgd |  | 3 |  | nC | VGS=10V, VDS=15V, ID=8.5A | 2 |
| Turn-On Delay Time | tD(on) |  | 4 |  | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 |
| Turn-On Rise Time | tr |  | 3.2 |  | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 |
| Turn-Off Delay Time | tD(off) |  | 11.2 |  | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 |
| Turn-Off Fall Time | tf |  | 3.6 |  | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 |
| Body Diode Reverse Recovery Time | trr |  | 8 |  | ns | IF=-8A, dI/dt=500A/µs | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 18 |  | nC | IF=18A, dI/dt=500A/µs | 2 |

## CAD (KiCad official)

- Symbol: `SM4616PRL`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files: `sm4616prl-etched.step` / `sm4616prl-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sm4616prl.step` / `sm4616prl.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [SPS datasheet](docs/sm4616prl-datasheet.pdf) (4 pp, sha256 `a6ec672596975c5e`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/sm4616prl-datasheet.pdf)