component
SM4616PRL
Public Made by Adomby adom
SPS MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 10d ago |
| viewers | 10d ago |
| package.json | 10d ago |
| page.json | 10d ago |
| README.md | 10d ago |
| sm4616prl-etched.glb | 10d ago |
| sm4616prl-etched.step | 10d ago |
| sm4616prl-hero.glb | 10d ago |
| sm4616prl-hero.overlay.json | 10d ago |
| sm4616prl.glb | 10d ago |
| sm4616prl.kicad_mod | 10d ago |
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| sm4616prl.lbr | 10d ago |
| sm4616prl.step | 10d ago |
SM4616PRL
SPS · MOSFETs · SOIC-8
SM4616PRL from SPS, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source of the N-channel MOSFET (symbol labels the N-channel device as G2/S2/D2). |
| 2 | G2 | input | Gate of the N-channel MOSFET, with maximum gate-source voltage of 20 V (±V). |
| 3 | S1 | passive | Source of the P-channel MOSFET (symbol labels the P-channel device as G1/S1/D1). |
| 4 | G1 | input | Gate of the P-channel MOSFET, with maximum gate-source voltage of 20 V (±V). |
| 5 | D1 | passive | Drain of the P-channel MOSFET, rated -30 V drain-source, shorted externally to pins 6. |
| 6 | D1 | passive | Drain of the P-channel MOSFET, rated -30 V drain-source, common with pin 5. |
| 7 | D2 | passive | Drain of the N-channel MOSFET, rated 30 V drain-source, common with pin 8. |
| 8 | D2 | passive | Drain of the N-channel MOSFET, rated 30 V drain-source, common with pin 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SPS |
| Package | SOIC-8 |
| Category | Transistors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | ID = -250uA, VGS = 0V | 2 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=30V, VGS=0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.8 | 2.4 | V | VDS = VGS ID = 250µA | 2 |
| Static Drain-Source On-Resistance (first row) | RDS(ON) | 14 | 20 | mΩ | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 18 | 23.4 | mΩ | VGS=4.5V, ID=8.5A | 2 | |
| Diode Forward Voltage | VSD | 0.72 | 1 | V | IS=1A,VGS=41V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 8.5 | A | 2 | |||
| Input Capacitance | Ciss | 740 | 902 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | |
| Output Capacitance | Coss | 110 | 135 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 82 | 97 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | |
| Drain-Source Voltage (N-channel) | VDS | 30 | V | N-channel | 1 | ||
| Drain-Source Voltage (P-channel) | VDS | -30 | V | P-channel | 1 | ||
| Gate-Source Voltage | VGS | 20 | V | ±, both channels | 1 | ||
| Continuous Drain Current (N-channel) | ID | 10 | A | TA=25°C, N-channel | 1 | ||
| Continuous Drain Current (N-channel) | ID | 8 | A | TA=70°C, N-channel | 1 | ||
| Continuous Drain Current (P-channel) | ID | -8 | A | TA=25°C, P-channel | 1 | ||
| Continuous Drain Current (P-channel) | ID | -6 | A | TA=70°C, P-channel | 1 | ||
| Pulsed Drain Current (N-channel) | IDM | 16 | A | N-channel | 1 | ||
| Pulsed Drain Current (P-channel) | IDM | -12.8 | A | P-channel | 1 | ||
| Avalanche Current (N-channel) | IAR | 3.2 | A | N-channel | 1 | ||
| Avalanche Current (P-channel) | IAR | -2.6 | A | P-channel | 1 | ||
| Repetitive avalanche energy (N-channel) | EAR | 7.36 | mJ | L=0.1mH, N-channel | 1 | ||
| Repetitive avalanche energy (P-channel) | EAR | -5.9 | mJ | L=0.1mH, P-channel | 1 | ||
| Power Dissipation | PD | 2 | W | TA=25°C, both channels | 1 | ||
| Power Dissipation | PD | 1.3 | W | TA=70°C, both channels | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RθJA | 70 | 105 | °C/W | t ≤ 10s | 1 | |
| Maximum Junction-to-Ambient | RθJA | 140 | 168 | °C/W | Steady State | 1 | |
| Maximum Junction-to-Lead | RθJL | 42 | 67 | °C/W | Steady State | 1 | |
| Forward Transconductance | gFS | 46 | S | VDS=5V, ID=8.5A | 2 | ||
| Gate resistance | Rg | 1.5 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 | ||
| Total Gate Charge (10V) | Qg (10V) | 7.5 | nC | VGS=10V, VDS=15V, ID=8.5A | 2 | ||
| Total Gate Charge (4.5V) | Qg | 3.75 | nC | VGS=10V, VDS=15V, ID=8.5A | 2 | ||
| Gate Source Charge | Qgs | 2.1 | nC | VGS=10V, VDS=15V, ID=8.5A | 2 | ||
| Gate Drain Charge | Qgd | 3 | nC | VGS=10V, VDS=15V, ID=8.5A | 2 | ||
| Turn-On Delay Time | tD(on) | 4 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Turn-On Rise Time | tr | 3.2 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Turn-Off Delay Time | tD(off) | 11.2 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 3.6 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Body Diode Reverse Recovery Time | trr | 8 | ns | IF=-8A, dI/dt=500A/µs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 18 | nC | IF=18A, dI/dt=500A/µs | 2 |
CAD (KiCad official)
- Symbol:
SM4616PRL - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
sm4616prl-etched.step/sm4616prl-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sm4616prl.step/sm4616prl.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SPS datasheet (4 pp, sha256
a6ec672596975c5e, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).