# SM2304NSA-VB

**VBsemi Elec** · MOSFETs · SOT-23(TO-236)

SM2304NSA-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the gate-source voltage is rated at ±12 V (absolute maximum). |
| 2 | S | passive | Source terminal; the continuous source-drain diode current is rated at 1.75 A at TC = 25 °C. |
| 3 | D | passive | Drain terminal; the drain-source voltage is rated at 20 V and the continuous drain current at 6 A (package limited) at TC = 25 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 20 | V |  | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 6 | A | TC = 25 °C (TJ = 150 °C) | 1 |
| Continuous Drain Current | ID |  |  | 5.1 | A | TC = 70 °C | 1 |
| Continuous Drain Current | ID |  |  | 5 | A | TA = 25 °C, notes b, c | 1 |
| Continuous Drain Current | ID |  |  | 4 | A | TA = 70 °C, notes b, c | 1 |
| Pulsed Drain Current | IDM |  |  | 20 | A |  | 1 |
| Continuous Source-Drain Diode Current | IS |  |  | 1.75 | A | TC = 25 °C | 1 |
| Continuous Source-Drain Diode Current | IS |  |  | 1.04 | A | TA = 25 °C, notes b, c | 1 |
| Maximum Power Dissipation | PD |  |  | 2.1 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 1.3 | W | TC = 70 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 1.25 | W | TA = 25 °C, notes b, c | 1 |
| Maximum Power Dissipation | PD |  |  | 0.8 | W | TA = 70 °C, notes b, c | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Soldering Recommendations (Peak Temperature) |  |  |  | 260 |  |  | 1 |
| Maximum Junction-to-Ambient | RthJA |  | 80 | 100 | °C/W | t ≤ 5 s, notes b, d | 1 |
| Maximum Junction-to-Foot (Drain) | RthJF |  | 40 | 60 | °C/W | Steady state | 1 |
| Maximum Junction-to-Ambient (steady state) | RthJA |  |  | 125 | °C/W | Steady state, note d | 1 |
| Drain-Source Breakdown Voltage | VDS | 20 |  |  | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 0.45 |  | 1 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ±8 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS = 20 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 10 | µA | VDS = 20 V, VGS = 0 V, TJ = 70 °C | 2 |
| On-State Drain Current | ID(on) | 20 |  |  | A | VDS ≤ 5 V, VGS = 4.5 V | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.022 | Ω | VGS = 4.5 V, ID = 5.0 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.028 | Ω | VGS = 2.5 V, ID = 4.7 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.039 | Ω | VGS = 1.8 V, ID = 4.3 A | 2 |
| Total Gate Charge | Qg |  | 12 | 18 | nC | VDS = 10 V, VGS = 5 V, ID = 5.0 A | 2 |
| Total Gate Charge | Qg |  | 8.8 | 14 | nC | VDS = 10 V, VGS = 4.5 V, ID = 5.0 A | 2 |
| Gate Resistance | Rg | 0.5 | 2.4 | 4.8 | Ω | f = 1 MHz | 2 |
| Rise Time | tr |  | 17 | 26 | ns | VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 31 | 47 | ns | VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Rise Time | tr |  | 13 | 20 | ns | VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 5 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 21 | 32 | ns | VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 5 V, Rg = 1 Ω | 2 |
| Pulse Diode Forward Current | ISM |  |  | 20 | A |  | 2 |
| Body Diode Voltage | VSD |  | 0.75 | 1.2 | V | IS = 4 A, VGS = 0 V | 2 |
| Body Diode Reverse Recovery Time | trr |  | 12 | 20 | ns | IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 5 | 10 | nC | IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| VDS Temperature Coefficient | ΔVDS/TJ |  | 25 |  | mV/°C | ID = 250 µA | 2 |
| VGS(th) Temperature Coefficient | ΔVGS(th)/TJ |  | -2.6 |  | mV/°C |  | 2 |
| Forward Transconductance | gfs |  | 24 |  | S | VDS = 10 V, ID = 5.0 A | 2 |
| Input Capacitance | Ciss |  | 865 |  | pF | VDS = 10 V, VGS = 0 V, f = 1 MHz | 2 |
| Output Capacitance | Coss |  | 105 |  | pF | VDS = 10 V, VGS = 0 V, f = 1 MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 55 |  | pF | VDS = 10 V, VGS = 0 V, f = 1 MHz | 2 |
| Gate-Source Charge | Qgs |  | 1.1 |  | nC |  | 2 |
| Gate-Drain Charge | Qgd |  | 0.7 |  | nC |  | 2 |
| Reverse Recovery Fall Time | ta |  | 7 |  | ns |  | 2 |
| Reverse Recovery Rise Time | tb |  | 5 |  | ns |  | 2 |

## CAD (KiCad official)

- Symbol: `SM2304NSA-VB`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files: `sm2304nsa-vb-etched.step` / `sm2304nsa-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sm2304nsa-vb.step` / `sm2304nsa-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8602988951577767936) (9 pp, sha256 `aedb4afe1633fc69`, retrieved 2026-10-15, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/sm2304nsa-vb-datasheet.pdf)