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SM2304NSA-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Symbol & Footprint

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Datasheet

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Contents

README

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SM2304NSA-VB

VBsemi Elec · MOSFETs · SOT-23(TO-236)

SM2304NSA-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the gate-source voltage is rated at ±12 V (absolute maximum).
2 S passive Source terminal; the continuous source-drain diode current is rated at 1.75 A at TC = 25 °C.
3 D passive Drain terminal; the drain-source voltage is rated at 20 V and the continuous drain current at 6 A (package limited) at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-23(TO-236)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID 6 A TC = 25 °C (TJ = 150 °C) 1
Continuous Drain Current ID 5.1 A TC = 70 °C 1
Continuous Drain Current ID 5 A TA = 25 °C, notes b, c 1
Continuous Drain Current ID 4 A TA = 70 °C, notes b, c 1
Pulsed Drain Current IDM 20 A 1
Continuous Source-Drain Diode Current IS 1.75 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 1.04 A TA = 25 °C, notes b, c 1
Maximum Power Dissipation PD 2.1 W TC = 25 °C 1
Maximum Power Dissipation PD 1.3 W TC = 70 °C 1
Maximum Power Dissipation PD 1.25 W TA = 25 °C, notes b, c 1
Maximum Power Dissipation PD 0.8 W TA = 70 °C, notes b, c 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 260 1
Maximum Junction-to-Ambient RthJA 80 100 °C/W t ≤ 5 s, notes b, d 1
Maximum Junction-to-Foot (Drain) RthJF 40 60 °C/W Steady state 1
Maximum Junction-to-Ambient (steady state) RthJA 125 °C/W Steady state, note d 1
Drain-Source Breakdown Voltage VDS 20 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 0.45 1 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±8 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 20 V, VGS = 0 V, TJ = 70 °C 2
On-State Drain Current ID(on) 20 A VDS ≤ 5 V, VGS = 4.5 V 2
Drain-Source On-State Resistance RDS(on) 0.022 Ω VGS = 4.5 V, ID = 5.0 A 2
Drain-Source On-State Resistance RDS(on) 0.028 Ω VGS = 2.5 V, ID = 4.7 A 2
Drain-Source On-State Resistance RDS(on) 0.039 Ω VGS = 1.8 V, ID = 4.3 A 2
Total Gate Charge Qg 12 18 nC VDS = 10 V, VGS = 5 V, ID = 5.0 A 2
Total Gate Charge Qg 8.8 14 nC VDS = 10 V, VGS = 4.5 V, ID = 5.0 A 2
Gate Resistance Rg 0.5 2.4 4.8 Ω f = 1 MHz 2
Rise Time tr 17 26 ns VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 31 47 ns VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time tr 13 20 ns VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 21 32 ns VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 5 V, Rg = 1 Ω 2
Pulse Diode Forward Current ISM 20 A 2
Body Diode Voltage VSD 0.75 1.2 V IS = 4 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 12 20 ns IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 5 10 nC IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C 2
VDS Temperature Coefficient ΔVDS/TJ 25 mV/°C ID = 250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ -2.6 mV/°C 2
Forward Transconductance gfs 24 S VDS = 10 V, ID = 5.0 A 2
Input Capacitance Ciss 865 pF VDS = 10 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 105 pF VDS = 10 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 55 pF VDS = 10 V, VGS = 0 V, f = 1 MHz 2
Gate-Source Charge Qgs 1.1 nC 2
Gate-Drain Charge Qgd 0.7 nC 2
Reverse Recovery Fall Time ta 7 ns 2
Reverse Recovery Rise Time tb 5 ns 2

CAD (KiCad official)

  • Symbol: SM2304NSA-VB
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
  • 3D model files: sm2304nsa-vb-etched.step / sm2304nsa-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sm2304nsa-vb.step / sm2304nsa-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 aedb4afe1633fc69, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF