SLP240C03D

{
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  "slug": "slp240c03d",
  "title": "SLP240C03D",
  "brief": "Slkor SLKORMICRO Elec MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
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    "mpn": "SLP240C03D",
    "manufacturer": "Slkor SLKORMICRO Elec",
    "package": "SOP-8",
    "pin_count": 8,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
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    "distributor_links": {
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      "source": "Component Ocean /api/assign-pns",
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      {
        "number": "1",
        "name": "S2",
        "type": "passive",
        "description": "Source of the N-channel MOSFET (channel 2, VDS 30V, ID 8.5A)."
      },
      {
        "number": "2",
        "name": "G2",
        "type": "input",
        "description": "Gate of the N-channel MOSFET, VGS maximum ±20V."
      },
      {
        "number": "3",
        "name": "S1",
        "type": "passive",
        "description": "Source of the P-channel MOSFET (channel 1, VDS -30V, ID -7.0A)."
      },
      {
        "number": "4",
        "name": "G1",
        "type": "input",
        "description": "Gate of the P-channel MOSFET, VGS maximum ±20V."
      },
      {
        "number": "5",
        "name": "D1",
        "type": "passive",
        "description": "Drain of the P-channel MOSFET, tied internally with pin 6 (VDS -30V)."
      },
      {
        "number": "6",
        "name": "D1",
        "type": "passive",
        "description": "Drain of the P-channel MOSFET, tied internally with pin 5 (VDS -30V)."
      },
      {
        "number": "7",
        "name": "D2",
        "type": "passive",
        "description": "Drain of the N-channel MOSFET, tied internally with pin 8 (VDS 30V)."
      },
      {
        "number": "8",
        "name": "D2",
        "type": "passive",
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  "metadata": {
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      "Manufacturer": "Slkor SLKORMICRO Elec",
      "Package": "SOP-8",
      "Category": "Transistors/Thyristors",
      "Pins": "8"
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          "name": "Maximum Power Dissipation (N-Channel and P-Channel, printed as 2.0 W each)",
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          "name": "Operating Junction and Storage Temperature Range",
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          "typ": null,
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          "kind": "electrical",
          "unit": "V",
          "min": 1.2,
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          "max": 2.4,
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          "unit": "mΩ",
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          "min": 5,
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          "name": "Diode Forward Voltage (N-Channel)",
          "symbol": "VSD",
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          "min": null,
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          "name": "Drain-Source Breakdown Voltage (P-Channel)",
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          "kind": "electrical",
          "unit": "V",
          "min": -30,
          "typ": null,
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          "conditions": "VGS=0V ID=-250μA",
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          "name": "Zero Gate Voltage Drain Current (P-Channel)",
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          "unit": "μA",
          "min": null,
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          "source_page": 5,
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          "name": "Gate-Body Leakage Current (P-Channel)",
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          "typ": null,
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          "conditions": "VGS=±20V,VDS=0V",
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          "unit": "V",
          "min": -1,
          "typ": -1.3,
          "max": -2,
          "conditions": "VDS=VGS,ID=-250μA",
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        {
          "name": "Drain-Source On-State Resistance (P-Channel)",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 42,
          "max": 45,
          "conditions": "VGS=-10V, ID=-7.0A",
          "source_page": 5,
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        {
          "name": "Drain-Source On-State Resistance (P-Channel)",
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          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 55,
          "max": 60,
          "conditions": "VGS=-4.5V, ID=-5.0A",
          "source_page": 5,
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          "name": "Forward Transconductance (P-Channel)",
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          "unit": "S",
          "min": 10,
          "typ": null,
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        {
          "name": "Thermal Resistance, Junction-to-Ambient (N-Channel)",
          "symbol": "RθJA",
          "kind": "thermal",
          "unit": "℃/W",
          "min": null,
          "typ": 63.5,
          "max": null,
          "conditions": "Surface mounted on FR4 board, t ≤ 10 sec (Note 2)",
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          "unit": "℃/W",
          "min": null,
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