# SLP170C04D

**Slkor SLKORMICRO Elec** · MOSFETs · SOP-8

SLP170C04D from Slkor SLKORMICRO Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source, pins 1-3 are labelled S in the datasheet pin drawing and symbols. |
| 2 | S | passive | Source, pins 1-3 are labelled S in the datasheet pin drawing and symbols. |
| 3 | S | passive | Source, pins 1-3 are labelled S in the datasheet pin drawing and symbols. |
| 4 | G | input | Gate, labelled G Pin4 in the datasheet symbols; VGS rating is ±20V for both channels. |
| 5 | D | passive | Drain, pins 5-8 are labelled D in the datasheet pin drawing and symbols; VDS is 40V (N-ch) and -40V (P-ch). |
| 6 | D | passive | Drain, pins 5-8 are labelled D in the datasheet pin drawing and symbols; VDS is 40V (N-ch) and -40V (P-ch). |
| 7 | D | passive | Drain, pins 5-8 are labelled D in the datasheet pin drawing and symbols; VDS is 40V (N-ch) and -40V (P-ch). |
| 8 | D | passive | Drain, pins 5-8 are labelled D in the datasheet pin drawing and symbols; VDS is 40V (N-ch) and -40V (P-ch). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Slkor SLKORMICRO Elec |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-Ch Drain-Source Voltage | VDS |  |  | 40 | V |  | 1 |
| P-Ch Drain-Source Voltage | VDS | -40 |  |  | V |  | 1 |
| N-Ch Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| P-Ch Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| N-Ch Continuous Drain Current | ID |  |  | 10 | A | TA=25℃ | 1 |
| P-Ch Continuous Drain Current | ID | -8 |  |  | A | TA=25℃ | 1 |
| N-Ch Continuous Drain Current | ID |  |  | 6.5 | A | TA=100℃ | 1 |
| P-Ch Continuous Drain Current | ID | -5 |  |  | A | TA=100℃ | 1 |
| N-Ch Pulsed Drain Current | IDM |  |  | 35 | A | Note 1: repetitive rating, pulse width limited by max junction temperature | 1 |
| P-Ch Pulsed Drain Current | IDM | -28 |  |  | A | Note 1: repetitive rating, pulse width limited by max junction temperature | 1 |
| N-Ch Single Pulsed Avalanche Energy | EAS |  |  | 13 | mJ | Note 2: TJ=25℃, VDD=20V, VG=10V, L=0.5mH, Rg=25Ω, IAS=7.2A | 1 |
| P-Ch Single Pulsed Avalanche Energy | EAS |  |  | 17.6 | mJ | Note 2: TJ=25℃, VDD=-20V, VG=-10V, L=0.5mH, Rg=25Ω, IAS=-8.4A | 1 |
| N-Ch Power Dissipation | PD |  |  | 2 | W | TA=25℃ | 1 |
| P-Ch Power Dissipation | PD |  |  | 3.2 | W | TA=25℃ | 1 |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 |  | 150 | ℃ |  | 1 |
| N-Ch Drain-Source Breakdown Voltage | BVDSS | 40 |  |  | V | VGS=0V, ID=250μA | 2 |
| N-Ch Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VGS=0V, VDS=40V | 2 |
| N-Ch Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0A | 2 |
| N-Ch Gate-Source Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VGS=VDS, ID=250μA | 2 |
| N-Ch Drain-Source On Resistance | RDS(ON) |  | 17 | 22 | mΩ | VGS=10V, ID=10A | 2 |
| N-Ch Drain-Source On Resistance | RDS(ON) |  | 25 | 35 | mΩ | VGS=4.5V, ID=6.5A | 2 |
| N-Ch Continuous Drain to Source Diode Current | IS |  |  | 10 | A |  | 2 |
| N-Ch Pulsed Drain to Source Diode Current | ISM |  |  | 35 | A |  | 2 |
| N-Ch Source-Drain Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=8A | 3 |
| P-Ch Drain-Source Breakdown Voltage | BVDSS | -40 |  |  | V | VGS=0V, ID=250μA | 5 |
| P-Ch Zero Gate Voltage Drain Current | IDSS |  |  | -1 | μA | VGS=0V, VDS=-40V | 5 |
| P-Ch Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0A | 5 |
| P-Ch Gate-Source Threshold Voltage | VGS(th) | -1 | -1.6 | -2.5 | V | VGS=VDS, ID=250μA | 5 |
| P-Ch Drain-Source On Resistance | RDS(ON) |  | 41 | 53 | mΩ | VGS=-10V, ID=-8A | 5 |
| P-Ch Drain-Source On Resistance | RDS(ON) |  | 58 | 81 | mΩ | VGS=-4.5V, ID=-5A | 5 |
| P-Ch Continuous Drain to Source Diode Current | IS |  |  | -8 | A |  | 5 |
| P-Ch Pulsed Drain to Source Diode Current | ISM |  |  | -24 | A |  | 5 |
| P-Ch Source-Drain Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V, IS=-6A | 5 |
| N-Ch Thermal Resistance, Junction to Ambient | RθJA |  | 62.5 |  | ℃/W |  | 1 |
| P-Ch Thermal Resistance, Junction to Ambient | RθJA |  | 39 |  | ℃/W |  | 1 |

## CAD (KiCad official)

- Symbol: `SLP170C04D`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `slp170c04d-etched.step` / `slp170c04d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `slp170c04d.step` / `slp170c04d.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Slkor SLKORMICRO Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603133446281703424) (8 pp, sha256 `82321352d61d48c6`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/slp170c04d-datasheet.pdf)