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SLP170C04D
Public Made by Adomby adom
Slkor SLKORMICRO Elec MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSLP170C04D
Slkor SLKORMICRO Elec · MOSFETs · SOP-8
SLP170C04D from Slkor SLKORMICRO Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source, pins 1-3 are labelled S in the datasheet pin drawing and symbols. |
| 2 | S | passive | Source, pins 1-3 are labelled S in the datasheet pin drawing and symbols. |
| 3 | S | passive | Source, pins 1-3 are labelled S in the datasheet pin drawing and symbols. |
| 4 | G | input | Gate, labelled G Pin4 in the datasheet symbols; VGS rating is ±20V for both channels. |
| 5 | D | passive | Drain, pins 5-8 are labelled D in the datasheet pin drawing and symbols; VDS is 40V (N-ch) and -40V (P-ch). |
| 6 | D | passive | Drain, pins 5-8 are labelled D in the datasheet pin drawing and symbols; VDS is 40V (N-ch) and -40V (P-ch). |
| 7 | D | passive | Drain, pins 5-8 are labelled D in the datasheet pin drawing and symbols; VDS is 40V (N-ch) and -40V (P-ch). |
| 8 | D | passive | Drain, pins 5-8 are labelled D in the datasheet pin drawing and symbols; VDS is 40V (N-ch) and -40V (P-ch). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Slkor SLKORMICRO Elec |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-Ch Drain-Source Voltage | VDS | 40 | V | 1 | |||
| P-Ch Drain-Source Voltage | VDS | -40 | V | 1 | |||
| N-Ch Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| P-Ch Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| N-Ch Continuous Drain Current | ID | 10 | A | TA=25℃ | 1 | ||
| P-Ch Continuous Drain Current | ID | -8 | A | TA=25℃ | 1 | ||
| N-Ch Continuous Drain Current | ID | 6.5 | A | TA=100℃ | 1 | ||
| P-Ch Continuous Drain Current | ID | -5 | A | TA=100℃ | 1 | ||
| N-Ch Pulsed Drain Current | IDM | 35 | A | Note 1: repetitive rating, pulse width limited by max junction temperature | 1 | ||
| P-Ch Pulsed Drain Current | IDM | -28 | A | Note 1: repetitive rating, pulse width limited by max junction temperature | 1 | ||
| N-Ch Single Pulsed Avalanche Energy | EAS | 13 | mJ | Note 2: TJ=25℃, VDD=20V, VG=10V, L=0.5mH, Rg=25Ω, IAS=7.2A | 1 | ||
| P-Ch Single Pulsed Avalanche Energy | EAS | 17.6 | mJ | Note 2: TJ=25℃, VDD=-20V, VG=-10V, L=0.5mH, Rg=25Ω, IAS=-8.4A | 1 | ||
| N-Ch Power Dissipation | PD | 2 | W | TA=25℃ | 1 | ||
| P-Ch Power Dissipation | PD | 3.2 | W | TA=25℃ | 1 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| N-Ch Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V, ID=250μA | 2 | ||
| N-Ch Zero Gate Voltage Drain Current | IDSS | 1 | μA | VGS=0V, VDS=40V | 2 | ||
| N-Ch Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0A | 2 | |
| N-Ch Gate-Source Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VGS=VDS, ID=250μA | 2 |
| N-Ch Drain-Source On Resistance | RDS(ON) | 17 | 22 | mΩ | VGS=10V, ID=10A | 2 | |
| N-Ch Drain-Source On Resistance | RDS(ON) | 25 | 35 | mΩ | VGS=4.5V, ID=6.5A | 2 | |
| N-Ch Continuous Drain to Source Diode Current | IS | 10 | A | 2 | |||
| N-Ch Pulsed Drain to Source Diode Current | ISM | 35 | A | 2 | |||
| N-Ch Source-Drain Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=8A | 3 | ||
| P-Ch Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS=0V, ID=250μA | 5 | ||
| P-Ch Zero Gate Voltage Drain Current | IDSS | -1 | μA | VGS=0V, VDS=-40V | 5 | ||
| P-Ch Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0A | 5 | |
| P-Ch Gate-Source Threshold Voltage | VGS(th) | -1 | -1.6 | -2.5 | V | VGS=VDS, ID=250μA | 5 |
| P-Ch Drain-Source On Resistance | RDS(ON) | 41 | 53 | mΩ | VGS=-10V, ID=-8A | 5 | |
| P-Ch Drain-Source On Resistance | RDS(ON) | 58 | 81 | mΩ | VGS=-4.5V, ID=-5A | 5 | |
| P-Ch Continuous Drain to Source Diode Current | IS | -8 | A | 5 | |||
| P-Ch Pulsed Drain to Source Diode Current | ISM | -24 | A | 5 | |||
| P-Ch Source-Drain Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-6A | 5 | ||
| N-Ch Thermal Resistance, Junction to Ambient | RθJA | 62.5 | ℃/W | 1 | |||
| P-Ch Thermal Resistance, Junction to Ambient | RθJA | 39 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
SLP170C04D - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
slp170c04d-etched.step/slp170c04d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);slp170c04d.step/slp170c04d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Slkor SLKORMICRO Elec datasheet (8 pp, sha256
82321352d61d48c6, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).