# SL4449A

**Slkor SLKORMICRO Elec** · MOSFETs · SOP-8

SL4449A from Slkor SLKORMICRO Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET, rated with the device's -30 V drain-source breakdown voltage and ±20 V gate-source voltage limits. |
| 2 | S | passive | Source terminal of the P-channel MOSFET, rated with the device's -30 V drain-source breakdown voltage and ±20 V gate-source voltage limits. |
| 3 | S | passive | Source terminal of the P-channel MOSFET, rated with the device's -30 V drain-source breakdown voltage and ±20 V gate-source voltage limits. |
| 4 | G | input | Gate terminal; the absolute maximum VGS is ±20 V and the gate threshold VGS(th) is -1 V to -3 V at VDS=VGS, ID=-250 µA. |
| 5 | D | passive | Drain terminal; BVDSS is -30 V minimum at VGS=0 V, ID=-250 µA, and continuous drain current is -7 A at TC=25°C. |
| 6 | D | passive | Drain terminal; BVDSS is -30 V minimum at VGS=0 V, ID=-250 µA, and continuous drain current is -7 A at TC=25°C. |
| 7 | D | passive | Drain terminal; BVDSS is -30 V minimum at VGS=0 V, ID=-250 µA, and continuous drain current is -7 A at TC=25°C. |
| 8 | D | passive | Drain terminal; BVDSS is -30 V minimum at VGS=0 V, ID=-250 µA, and continuous drain current is -7 A at TC=25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Slkor SLKORMICRO Elec |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 |  |  | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID | -7 |  |  | A | Tc=25°C; VGS=10V | 1 |
| Pulse Drain Current Tested | IDM | -30 |  |  | A | Tc=25°C | 1 |
| Diode Continuous Forward Current | IS | -7 |  |  | A | Tc=25°C | 1 |
| Maximum Junction Temperature | TJ |  |  | 150 | °C |  | 1 |
| Storage Temperature Range | TSTG | -50 |  | 155 | °C |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 30 | °C/W | 1 in2 pad of 2-oz copper | 1 |
| Drain-Source Breakdown Voltage | BV(BR)DSS | -30 |  |  | V | VGS=0V, ID=-250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | uA | VDS=-30V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.8 | -3 | V | VDS=VGS, ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 28 | 34 | mΩ | VGS=-10V, ID=-7A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 47 | 54 | mΩ | VGS=-4.5V, ID=-5A | 2 |
| Forward on voltage | VSD |  | -0.8 | -1.2 | V | Tj=25℃, Is=-7A | 2 |

## CAD (KiCad official)

- Symbol: `SL4449A`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `sl4449a-etched.step` / `sl4449a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sl4449a.step` / `sl4449a.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Slkor SLKORMICRO Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603055955337109504) (4 pp, sha256 `8cd034951a01e4d9`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/sl4449a-datasheet.pdf)