component
SL4449A
Public Made by Adomby adom
Slkor SLKORMICRO Elec MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSL4449A
Slkor SLKORMICRO Elec · MOSFETs · SOP-8
SL4449A from Slkor SLKORMICRO Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET, rated with the device's -30 V drain-source breakdown voltage and ±20 V gate-source voltage limits. |
| 2 | S | passive | Source terminal of the P-channel MOSFET, rated with the device's -30 V drain-source breakdown voltage and ±20 V gate-source voltage limits. |
| 3 | S | passive | Source terminal of the P-channel MOSFET, rated with the device's -30 V drain-source breakdown voltage and ±20 V gate-source voltage limits. |
| 4 | G | input | Gate terminal; the absolute maximum VGS is ±20 V and the gate threshold VGS(th) is -1 V to -3 V at VDS=VGS, ID=-250 µA. |
| 5 | D | passive | Drain terminal; BVDSS is -30 V minimum at VGS=0 V, ID=-250 µA, and continuous drain current is -7 A at TC=25°C. |
| 6 | D | passive | Drain terminal; BVDSS is -30 V minimum at VGS=0 V, ID=-250 µA, and continuous drain current is -7 A at TC=25°C. |
| 7 | D | passive | Drain terminal; BVDSS is -30 V minimum at VGS=0 V, ID=-250 µA, and continuous drain current is -7 A at TC=25°C. |
| 8 | D | passive | Drain terminal; BVDSS is -30 V minimum at VGS=0 V, ID=-250 µA, and continuous drain current is -7 A at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Slkor SLKORMICRO Elec |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -7 | A | Tc=25°C; VGS=10V | 1 | ||
| Pulse Drain Current Tested | IDM | -30 | A | Tc=25°C | 1 | ||
| Diode Continuous Forward Current | IS | -7 | A | Tc=25°C | 1 | ||
| Maximum Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -50 | 155 | °C | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 30 | °C/W | 1 in2 pad of 2-oz copper | 1 | ||
| Drain-Source Breakdown Voltage | BV(BR)DSS | -30 | V | VGS=0V, ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | uA | VDS=-30V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.8 | -3 | V | VDS=VGS, ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) | 28 | 34 | mΩ | VGS=-10V, ID=-7A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 47 | 54 | mΩ | VGS=-4.5V, ID=-5A | 2 | |
| Forward on voltage | VSD | -0.8 | -1.2 | V | Tj=25℃, Is=-7A | 2 |
CAD (KiCad official)
- Symbol:
SL4449A - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
sl4449a-etched.step/sl4449a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sl4449a.step/sl4449a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Slkor SLKORMICRO Elec datasheet (4 pp, sha256
8cd034951a01e4d9, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).