# SL4421

**Slkor(SLKORMICRO Elec.)** · MOSFETs · SOP-8

SL4421 from Slkor(SLKORMICRO Elec.), in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET (Pins 1-3 are source); the device is rated VDS -60V and ID -8.5A. |
| 2 | S | passive | Source of the P-channel MOSFET (Pins 1-3 are source); the device is rated VDS -60V and ID -8.5A. |
| 3 | S | passive | Source of the P-channel MOSFET (Pins 1-3 are source); the device is rated VDS -60V and ID -8.5A. |
| 4 | G | input | Gate of the P-channel MOSFET, with gate-source voltage limited to ±20V and threshold of -1V to -2.5V. |
| 5 | D | passive | Drain of the P-channel MOSFET (Pins 5-8 are drain), with drain-source voltage rated -60V. |
| 6 | D | passive | Drain of the P-channel MOSFET (Pins 5-8 are drain), with drain-source voltage rated -60V. |
| 7 | D | passive | Drain of the P-channel MOSFET (Pins 5-8 are drain), with drain-source voltage rated -60V. |
| 8 | D | passive | Drain of the P-channel MOSFET (Pins 5-8 are drain), with drain-source voltage rated -60V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Slkor(SLKORMICRO Elec.) |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -60 | V | TC=25℃ | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | TC=25℃ | 1 |
| Continuous Drain Current | ID |  |  | -8.5 | A | TC=25℃ | 1 |
| Continuous Drain Current | ID |  |  | -5.4 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | -34 | A | TC=25℃ | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 105 | mJ | TC=25℃ | 1 |
| Single Pulse Avalanche Current | IAS |  |  | -46 | A | TC=25℃ | 1 |
| Power Dissipation | PD |  |  | 4.1 | W | TC=25℃ | 1 |
| Operating and Storage Junction Temperature | TJ, TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction to Ambient | RƟJA |  |  | 62 | ℃/W |  | 1 |
| Thermal Resistance Junction to Case | RƟJC |  |  | 30 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -60 |  |  | V | VGS=0V,ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | μA | VGS=0V, VDS=-60V,TJ=25℃ | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -10 | μA | VGS=0V, VDS=-48V,TJ=125℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0A | 2 |
| Gate-Source Threshold Voltage | VGS(th) | -1 | -1.6 | -2.5 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance | RDS(ON) |  | 23 | 30 | mΩ | VGS=-10V,ID=-8A | 2 |
| Drain-Source On Resistance | RDS(ON) |  | 28 | 40 | mΩ | VGS=-4.5V,ID=-6A | 2 |
| Input Capacitance | Ciss |  | 2550 | 3850 | pF | VDS=-25V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss |  | 160 | 230 | pF | VDS=-25V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 110 | 165 | pF | VDS=-25V, VGS=0V, f=1MHz | 2 |
| Turn-On Delay Time | td(on) |  | 25 | 50 | ns | VDD=-30V, VGS=-10V, ID=-1A, RGEN=6Ω | 2 |
| Rise Time | tr |  | 13.8 | 28 | ns | VDD=-30V, VGS=-10V, ID=-1A, RGEN=6Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 148 | 290 | ns | VDD=-30V, VGS=-10V, ID=-1A, RGEN=6Ω | 2 |
| Fall Time | tf |  | 51 | 100 | ns | VDD=-30V, VGS=-10V, ID=-1A, RGEN=6Ω | 2 |
| Total Gate Charge | Qg |  | 43.8 | 88 | nC | VDS=-30V, VGS=-10V, ID=-5A | 2 |
| Gate-Source Charge | Qgs |  | 4.6 | 9 | nC | VDS=-30V, VGS=-10V, ID=-5A | 2 |
| Gate-Drain Miller Charge | Qgd |  | 8.3 | 17 | nC | VDS=-30V, VGS=-10V, ID=-5A | 2 |
| Continuous Source Current | IS |  |  | -8.5 | A | VG=VD=0V, Force Current | 3 |
| Pulsed Source Current | ISM |  |  | -17 | A |  | 3 |
| Diode Forward Voltage | VSD |  |  | -1 | V | VGS=0V,IS=-1A, TJ=25℃ | 3 |
| Forward Transconductance | GFS |  | 18 |  | S | VDS=-10V, ID=-3A | 2 |
| Reverse Recovery Time | trr |  | 40 |  | ns | VR=-50V, IS=-5A, di/dt=100A/µs, TJ=25℃ | 3 |
| Reverse Recovery Charge | Qrr |  | 30 |  | nC | VR=-50V, IS=-5A, di/dt=100A/µs, TJ=25℃ | 3 |

## CAD (KiCad official)

- Symbol: `SL4421`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `sl4421-etched.step` / `sl4421-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sl4421.step` / `sl4421.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Slkor(SLKORMICRO Elec.) datasheet](docs/sl4421-datasheet.pdf) (5 pp, sha256 `0266c7f59d820649`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/sl4421-datasheet.pdf)