main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 15d ago
viewers sl4421: viewers · Ray 15d ago
package.json Publish 0.1.0 · Ray 15d ago
page.json Set visibility: public · Ray 15d ago
README.md Publish 0.1.0 · Ray 15d ago
sl4421-etched.glb Publish 0.1.0 · Ray 15d ago
sl4421-etched.step sl4421: factory component page (tier=lcsc) · Ray 15d ago
sl4421-hero.glb sl4421: hero GLB from the etched model (keeps the MPN mark) · Ray 15d ago
sl4421-hero.overlay.json Publish 0.1.0 · Ray 15d ago
sl4421.glb Publish 0.1.0 · Ray 15d ago
sl4421.kicad_mod Publish 0.1.0 · Ray 15d ago
sl4421.kicad_sym Publish 0.1.0 · Ray 15d ago
sl4421.lbr Publish 0.1.0 · Ray 15d ago
sl4421.step Publish 0.1.0 · Ray 15d ago

SL4421

Slkor(SLKORMICRO Elec.) · MOSFETs · SOP-8

SL4421 from Slkor(SLKORMICRO Elec.), in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET (Pins 1-3 are source); the device is rated VDS -60V and ID -8.5A.
2 S passive Source of the P-channel MOSFET (Pins 1-3 are source); the device is rated VDS -60V and ID -8.5A.
3 S passive Source of the P-channel MOSFET (Pins 1-3 are source); the device is rated VDS -60V and ID -8.5A.
4 G input Gate of the P-channel MOSFET, with gate-source voltage limited to ±20V and threshold of -1V to -2.5V.
5 D passive Drain of the P-channel MOSFET (Pins 5-8 are drain), with drain-source voltage rated -60V.
6 D passive Drain of the P-channel MOSFET (Pins 5-8 are drain), with drain-source voltage rated -60V.
7 D passive Drain of the P-channel MOSFET (Pins 5-8 are drain), with drain-source voltage rated -60V.
8 D passive Drain of the P-channel MOSFET (Pins 5-8 are drain), with drain-source voltage rated -60V.

Key specifications

Parameter Value
Manufacturer Slkor(SLKORMICRO Elec.)
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Continuous Drain Current ID -8.5 A TC=25℃ 1
Continuous Drain Current ID -5.4 A TC=100℃ 1
Pulsed Drain Current IDM -34 A TC=25℃ 1
Single Pulse Avalanche Energy EAS 105 mJ TC=25℃ 1
Single Pulse Avalanche Current IAS -46 A TC=25℃ 1
Power Dissipation PD 4.1 W TC=25℃ 1
Operating and Storage Junction Temperature TJ, TSTG -55 150 ℃ 1
Thermal Resistance Junction to Ambient RƟJA 62 ℃/W 1
Thermal Resistance Junction to Case RƟJC 30 ℃/W 1
Drain-Source Breakdown Voltage BVDSS -60 V VGS=0V,ID=250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VGS=0V, VDS=-60V,TJ=25℃ 2
Zero Gate Voltage Drain Current IDSS -10 μA VGS=0V, VDS=-48V,TJ=125℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0A 2
Gate-Source Threshold Voltage VGS(th) -1 -1.6 -2.5 V VGS=VDS, ID=250μA 2
Drain-Source On Resistance RDS(ON) 23 30 mΩ VGS=-10V,ID=-8A 2
Drain-Source On Resistance RDS(ON) 28 40 mΩ VGS=-4.5V,ID=-6A 2
Input Capacitance Ciss 2550 3850 pF VDS=-25V, VGS=0V, f=1MHz 2
Output Capacitance Coss 160 230 pF VDS=-25V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 110 165 pF VDS=-25V, VGS=0V, f=1MHz 2
Turn-On Delay Time td(on) 25 50 ns VDD=-30V, VGS=-10V, ID=-1A, RGEN=6Ω 2
Rise Time tr 13.8 28 ns VDD=-30V, VGS=-10V, ID=-1A, RGEN=6Ω 2
Turn-Off Delay Time td(off) 148 290 ns VDD=-30V, VGS=-10V, ID=-1A, RGEN=6Ω 2
Fall Time tf 51 100 ns VDD=-30V, VGS=-10V, ID=-1A, RGEN=6Ω 2
Total Gate Charge Qg 43.8 88 nC VDS=-30V, VGS=-10V, ID=-5A 2
Gate-Source Charge Qgs 4.6 9 nC VDS=-30V, VGS=-10V, ID=-5A 2
Gate-Drain Miller Charge Qgd 8.3 17 nC VDS=-30V, VGS=-10V, ID=-5A 2
Continuous Source Current IS -8.5 A VG=VD=0V, Force Current 3
Pulsed Source Current ISM -17 A 3
Diode Forward Voltage VSD -1 V VGS=0V,IS=-1A, TJ=25℃ 3
Forward Transconductance GFS 18 S VDS=-10V, ID=-3A 2
Reverse Recovery Time trr 40 ns VR=-50V, IS=-5A, di/dt=100A/µs, TJ=25℃ 3
Reverse Recovery Charge Qrr 30 nC VR=-50V, IS=-5A, di/dt=100A/µs, TJ=25℃ 3

CAD (KiCad official)

  • Symbol: SL4421
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: sl4421-etched.step / sl4421-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sl4421.step / sl4421.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Slkor(SLKORMICRO Elec.) datasheet (5 pp, sha256 0266c7f59d820649, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF