# SIR802DP-T1-GE3-HXY

**HXY MOSFET** · MOSFETs · DFN-8(5x6)

SIR802DP-T1-GE3-HXY from HXY MOSFET, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source; pin 1, marked by the arrow on the package drawing. |
| 2 | S | passive | Source connection. |
| 3 | S | passive | Source connection. |
| 4 | G | input | Gate; the datasheet gives VGS as ±12V maximum and a 0.4V to 1.1V threshold. |
| 5 | D | passive | Drain; VDS is 20V maximum and ID is 60A at TC=25℃. |
| 6 | D | passive | Drain connection. |
| 7 | D | passive | Drain connection. |
| 8 | D | passive | Drain connection. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 |  |  | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=20V, VGS=0V | 2 |
| Gate to Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±12V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.4 | 0.7 | 1.1 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) |  | 3.5 | 5 | mΩ | VGS=4.5V, ID=30A | 2 |
| Static Drain-Source on-Resistance | RDS(on) |  | 6.5 | 9 | mΩ | VGS=2.5V, ID=20A | 2 |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM |  |  | 300 | A |  | 2 |
| Drain to Source Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS = 0V, IS=30A | 2 |
| Drain-Source Voltage | VDS |  |  | 20 | V |  | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 1 |
| Continuous Drain Current | ID@TC=25℃ |  |  | 60 | A | TC=25℃, VGS @ 10V | 1 |
| Continuous Drain Current | ID@TC=70℃ |  |  | 43 | A | TC=70℃, VGS @ 10V | 1 |
| Pulsed Drain Current | IDM |  |  | 200 | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 58 | mJ |  | 1 |
| Avalanche Current | IAS |  |  | 41 | A |  | 1 |
| Total Power Dissipation | PD@TC=25℃ |  |  | 58 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 2.6 | ℃/W |  | 1 |

## CAD (KiCad official)

- Symbol: `SIR802DP-T1-GE3-HXY`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files: `sir802dp-t1-ge3-hxy-etched.step` / `sir802dp-t1-ge3-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sir802dp-t1-ge3-hxy.step` / `sir802dp-t1-ge3-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8758125730943651840) (6 pp, sha256 `b6beb1674d525c77`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/sir802dp-t1-ge3-hxy-datasheet.pdf)