component
SIR802DP-T1-GE3-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 13d ago |
| package.json | 13d ago |
| page.json | 13d ago |
| README.md | 13d ago |
| sir802dp-t1-ge3-hxy-etched.glb | 13d ago |
| sir802dp-t1-ge3-hxy-etched.step | 13d ago |
| sir802dp-t1-ge3-hxy-hero.glb | 13d ago |
| sir802dp-t1-ge3-hxy-hero.overlay.json | 13d ago |
| sir802dp-t1-ge3-hxy.glb | 13d ago |
| sir802dp-t1-ge3-hxy.kicad_mod | 13d ago |
| sir802dp-t1-ge3-hxy.kicad_sym | 13d ago |
| sir802dp-t1-ge3-hxy.lbr | 13d ago |
| sir802dp-t1-ge3-hxy.step | 13d ago |
SIR802DP-T1-GE3-HXY
HXY MOSFET · MOSFETs · DFN-8(5x6)
SIR802DP-T1-GE3-HXY from HXY MOSFET, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source; pin 1, marked by the arrow on the package drawing. |
| 2 | S | passive | Source connection. |
| 3 | S | passive | Source connection. |
| 4 | G | input | Gate; the datasheet gives VGS as ±12V maximum and a 0.4V to 1.1V threshold. |
| 5 | D | passive | Drain; VDS is 20V maximum and ID is 60A at TC=25℃. |
| 6 | D | passive | Drain connection. |
| 7 | D | passive | Drain connection. |
| 8 | D | passive | Drain connection. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=20V, VGS=0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±12V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.4 | 0.7 | 1.1 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 3.5 | 5 | mΩ | VGS=4.5V, ID=30A | 2 | |
| Static Drain-Source on-Resistance | RDS(on) | 6.5 | 9 | mΩ | VGS=2.5V, ID=20A | 2 | |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 300 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS = 0V, IS=30A | 2 | ||
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 60 | A | TC=25℃, VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=70℃ | 43 | A | TC=70℃, VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 200 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 58 | mJ | 1 | |||
| Avalanche Current | IAS | 41 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 58 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 2.6 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
SIR802DP-T1-GE3-HXY - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
sir802dp-t1-ge3-hxy-etched.step/sir802dp-t1-ge3-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sir802dp-t1-ge3-hxy.step/sir802dp-t1-ge3-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
b6beb1674d525c77, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).