# SIHFR210-VB

**VBsemi Elec** · MOSFETs · TO-252

SIHFR210-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drives the N-channel MOSFET with VGS rated ±20 V and RDS(on) of 0.85 Ω at VGS = 10 V. |
| 2 | D | passive | Drain (also the mounting tab); VDS rated 200 V with continuous drain current of 5.0 A at TC = 25 °C. |
| 3 | S | passive | Source; continuous body-diode source current is 4.8 A and the pulsed diode current is 19 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 200 | V | TC = 25 °C | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | TC = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | 5 | A | VGS at 10 V, TC = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | 4 | A | VGS at 10 V, TC = 100 °C | 1 |
| Pulsed Drain Current | IDM |  |  | 20 | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 161 | mJ | VDD = 50 V, TJ = 25 °C, L = 14 mH, Rg = 25, IAS = 4.8 A | 1 |
| Repetitive Avalanche Current | IAR |  |  | 4.8 | A |  | 1 |
| Repetitive Avalanche Energy | EAR |  |  | 4.2 | mJ |  | 1 |
| Maximum Power Dissipation | PD |  |  | 42 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation (PCB mount) | PD |  |  | 2.5 | W | TA = 25 °C | 1 |
| Peak Diode Recovery dV/dt | dV/dt |  |  | 5 | V/ns |  | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Soldering Recommendations (Peak temperature) |  |  |  | 260 | °C | for 10 s, 1.6 mm from case | 1 |
| Maximum Junction-to-Ambient | RthJA |  |  | 110 | °C/W |  | 2 |
| Maximum Junction-to-Ambient (PCB mount) | RthJA |  |  | 50 | °C/W | mounted on 1" square PCB | 2 |
| Maximum Junction-to-Case (Drain) | RthJC |  |  | 3 | °C/W |  | 2 |
| Drain-Source Breakdown Voltage | VDS | 200 |  |  | V | VGS = 0 V, ID = 250 μA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 2 |  | 4 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 25 | μA | VDS = 200 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 250 | μA | VDS = 160 V, VGS = 0 V, TJ = 125 °C | 2 |
| Forward Transconductance | gfs | 1.7 |  |  | S | VDS = 50 V, ID = 2.9 A | 2 |
| Continuous Source-Drain Diode Current | IS |  |  | 4.8 | A |  | 2 |
| Pulsed Diode Forward Current | ISM |  |  | 19 | A |  | 2 |
| Body Diode Voltage | VSD |  |  | 1.8 | V | TJ = 25 °C, IS = 4.8 A, VGS = 0 V | 2 |
| Body Diode Reverse Recovery Time | trr |  | 150 | 300 | ns | TJ = 25 °C, IF = 4.8 A, dI/dt = 100 A/μs | 2 |
| Total Gate Charge | Qg |  |  | 13 | nC | VGS = 10 V, ID = 4.8 A, VDS = 160 V | 2 |
| VDS Temperature Coefficient | ΔVDS/TJ |  | 0.29 |  | V/°C | Reference to 25 °C, ID = 1 mA | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 0.85 |  | Ω | VGS = 10 V, ID = 2.9 A | 2 |
| Input Capacitance | Ciss |  | 185 |  | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 |
| Output Capacitance | Coss |  | 100 |  | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 30 |  | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 |
| Gate-Source Charge | Qgs |  | 3 |  | nC | VGS = 10 V, ID = 4.8 A, VDS = 160 V | 2 |
| Gate-Drain Charge | Qgd |  | 7.9 |  | nC | VGS = 10 V, ID = 4.8 A, VDS = 160 V | 2 |
| Rise Time | tr |  | 22 |  | ns | VDD = 100 V, ID = 4.8 A, RG = 18, RD = 20 | 2 |
| Turn-Off Delay Time | td(off) |  | 19 |  | ns | VDD = 100 V, ID = 4.8 A, RG = 18, RD = 20 | 2 |
| Fall Time | tf |  | 13 |  | ns | VDD = 100 V, ID = 4.8 A, RG = 18, RD = 20 | 2 |
| Internal Drain Inductance | LD |  | 4.5 |  | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 |
| Internal Source Inductance | LS |  | 7.5 |  | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 |

## CAD (KiCad official)

- Symbol: `SIHFR210-VB`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `sihfr210-vb-etched.step` / `sihfr210-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sihfr210-vb.step` / `sihfr210-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/sihfr210-vb-datasheet.pdf) (10 pp, sha256 `2783f4e38e187820`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/sihfr210-vb-datasheet.pdf)