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SIHFR210-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSIHFR210-VB
VBsemi Elec · MOSFETs · TO-252
SIHFR210-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drives the N-channel MOSFET with VGS rated ±20 V and RDS(on) of 0.85 Ω at VGS = 10 V. |
| 2 | D | passive | Drain (also the mounting tab); VDS rated 200 V with continuous drain current of 5.0 A at TC = 25 °C. |
| 3 | S | passive | Source; continuous body-diode source current is 4.8 A and the pulsed diode current is 19 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 200 | V | TC = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC = 25 °C | 1 | |
| Continuous Drain Current | ID | 5 | A | VGS at 10 V, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 4 | A | VGS at 10 V, TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 20 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 161 | mJ | VDD = 50 V, TJ = 25 °C, L = 14 mH, Rg = 25, IAS = 4.8 A | 1 | ||
| Repetitive Avalanche Current | IAR | 4.8 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 4.2 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 42 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation (PCB mount) | PD | 2.5 | W | TA = 25 °C | 1 | ||
| Peak Diode Recovery dV/dt | dV/dt | 5 | V/ns | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering Recommendations (Peak temperature) | 260 | °C | for 10 s, 1.6 mm from case | 1 | |||
| Maximum Junction-to-Ambient | RthJA | 110 | °C/W | 2 | |||
| Maximum Junction-to-Ambient (PCB mount) | RthJA | 50 | °C/W | mounted on 1" square PCB | 2 | ||
| Maximum Junction-to-Case (Drain) | RthJC | 3 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | VDS | 200 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 25 | μA | VDS = 200 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | μA | VDS = 160 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Forward Transconductance | gfs | 1.7 | S | VDS = 50 V, ID = 2.9 A | 2 | ||
| Continuous Source-Drain Diode Current | IS | 4.8 | A | 2 | |||
| Pulsed Diode Forward Current | ISM | 19 | A | 2 | |||
| Body Diode Voltage | VSD | 1.8 | V | TJ = 25 °C, IS = 4.8 A, VGS = 0 V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 150 | 300 | ns | TJ = 25 °C, IF = 4.8 A, dI/dt = 100 A/μs | 2 | |
| Total Gate Charge | Qg | 13 | nC | VGS = 10 V, ID = 4.8 A, VDS = 160 V | 2 | ||
| VDS Temperature Coefficient | ΔVDS/TJ | 0.29 | V/°C | Reference to 25 °C, ID = 1 mA | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.85 | Ω | VGS = 10 V, ID = 2.9 A | 2 | ||
| Input Capacitance | Ciss | 185 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Output Capacitance | Coss | 100 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 30 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Gate-Source Charge | Qgs | 3 | nC | VGS = 10 V, ID = 4.8 A, VDS = 160 V | 2 | ||
| Gate-Drain Charge | Qgd | 7.9 | nC | VGS = 10 V, ID = 4.8 A, VDS = 160 V | 2 | ||
| Rise Time | tr | 22 | ns | VDD = 100 V, ID = 4.8 A, RG = 18, RD = 20 | 2 | ||
| Turn-Off Delay Time | td(off) | 19 | ns | VDD = 100 V, ID = 4.8 A, RG = 18, RD = 20 | 2 | ||
| Fall Time | tf | 13 | ns | VDD = 100 V, ID = 4.8 A, RG = 18, RD = 20 | 2 | ||
| Internal Drain Inductance | LD | 4.5 | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 | ||
| Internal Source Inductance | LS | 7.5 | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 |
CAD (KiCad official)
- Symbol:
SIHFR210-VB - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
sihfr210-vb-etched.step/sihfr210-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sihfr210-vb.step/sihfr210-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (10 pp, sha256
2783f4e38e187820, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).