SI9926BDY-T1-E3-VB

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  "slug": "si9926bdy-t1-e3-vb",
  "title": "SI9926BDY-T1-E3-VB",
  "brief": "VBsemi Elec MOSFETs, SO-8. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
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  "component": {
    "mpn": "SI9926BDY-T1-E3-VB",
    "manufacturer": "VBsemi Elec",
    "package": "SO-8",
    "pin_count": 8,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603067729096699904",
    "parts": {
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      "footprint": "si9926bdy-t1-e3-vb.kicad_mod",
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      "lbr": "si9926bdy-t1-e3-vb.lbr"
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    "distributor_links": {},
    "pins": [
      {
        "number": "1",
        "name": "S1",
        "type": "passive",
        "description": "Source of N-channel MOSFET #1. Continuous source current (diode conduction) rated 1.7 A. Typically tied to circuit ground or the low side of the switched load."
      },
      {
        "number": "2",
        "name": "G1",
        "type": "input",
        "description": "Gate of N-channel MOSFET #1. VGS absolute maximum ± 12 V; VGS(th) = 0.6-1.5 V at ID = 250 µA. Drive with 4.5 V for full enhancement (RDS(on) = 0.019 Ω)."
      },
      {
        "number": "3",
        "name": "S2",
        "type": "passive",
        "description": "Source of N-channel MOSFET #2. Continuous source current (diode conduction) rated 1.7 A. Independent from MOSFET #1's source."
      },
      {
        "number": "4",
        "name": "G2",
        "type": "input",
        "description": "Gate of N-channel MOSFET #2. VGS absolute maximum ± 12 V; VGS(th) = 0.6-1.5 V at ID = 250 µA. Drive with 4.5 V for full enhancement (RDS(on) = 0.019 Ω)."
      },
      {
        "number": "5",
        "name": "D2",
        "type": "passive",
        "description": "Drain of N-channel MOSFET #2 (pin 5 and pin 6 are both D2, internally connected for current handling/thermal). VDS max 20 V; continuous ID = 7.1 A at TA = 25 °C."
      },
      {
        "number": "6",
        "name": "D2",
        "type": "passive",
        "description": "Drain of N-channel MOSFET #2 (pin 5 and pin 6 are both D2, internally connected for current handling/thermal). VDS max 20 V; continuous ID = 7.1 A at TA = 25 °C."
      },
      {
        "number": "7",
        "name": "D1",
        "type": "passive",
        "description": "Drain of N-channel MOSFET #1 (pin 7 and pin 8 are both D1, internally connected for current handling/thermal). VDS max 20 V; continuous ID = 7.1 A at TA = 25 °C."
      },
      {
        "number": "8",
        "name": "D1",
        "type": "passive",
        "description": "Drain of N-channel MOSFET #1 (pin 7 and pin 8 are both D1, internally connected for current handling/thermal). VDS max 20 V; continuous ID = 7.1 A at TA = 25 °C."
      }
    ],
    "provenance": {
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        "pages": null,
        "sha256": "d73fb256a53213ce",
        "source_tier": "lcsc"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 8,
        "described": 8,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
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      "footprint": "viewers/footprint.html"
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        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
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          1.75
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        "zmin_mm": -0.0,
        "centre_offset_mm": 0.0,
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        "checked": "2026-10-07",
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  },
  "metadata": {
    "specs": {
      "Manufacturer": "VBsemi Elec",
      "Package": "SO-8",
      "Category": "Transistors/Thyristors",
      "Pins": "8"
    }
  },
  "variants": [
    {
      "mpn": "SI9926BDY-T1-E3-VB",
      "kind": "packaging"
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  "discovery_pitch": "SI9926BDY-T1-E3-VB (VBsemi Elec) component page with datasheet-verified CAD.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
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  "updated_at": "2026-09-25T06:00:20.759Z"
}