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docs	si9926bdy-t1-e3-vb: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray	1mo ago
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page.json	si9926bdy-t1-e3-vb: component.models_3d pose record per STEP (Z-up, seated z=0, pad-centre origin, identity binding) · Ray	1mo ago
README.md	si9926bdy-t1-e3-vb: laser-etched CAD + chip hero (factory 2.0.0 backfill) · Ray	1mo ago
si9926bdy-t1-e3-vb-etched.fit.json	si9926bdy-t1-e3-vb: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray	1mo ago
si9926bdy-t1-e3-vb-etched.glb	si9926bdy-t1-e3-vb: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray	1mo ago
si9926bdy-t1-e3-vb-etched.step	si9926bdy-t1-e3-vb: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray	1mo ago
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SI9926BDY-T1-E3-VB

VBsemi Elec · MOSFETs · SO-8

SI9926BDY-T1-E3-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	S1	passive	Source of N-channel MOSFET #1. Continuous source current (diode conduction) rated 1.7 A. Typically tied to circuit ground or the low side of the switched load.
2	G1	input	Gate of N-channel MOSFET #1. VGS absolute maximum ± 12 V; VGS(th) = 0.6-1.5 V at ID = 250 µA. Drive with 4.5 V for full enhancement (RDS(on) = 0.019 Ω).
3	S2	passive	Source of N-channel MOSFET #2. Continuous source current (diode conduction) rated 1.7 A. Independent from MOSFET #1's source.
4	G2	input	Gate of N-channel MOSFET #2. VGS absolute maximum ± 12 V; VGS(th) = 0.6-1.5 V at ID = 250 µA. Drive with 4.5 V for full enhancement (RDS(on) = 0.019 Ω).
5	D2	passive	Drain of N-channel MOSFET #2 (pin 5 and pin 6 are both D2, internally connected for current handling/thermal). VDS max 20 V; continuous ID = 7.1 A at TA = 25 °C.
6	D2	passive	Drain of N-channel MOSFET #2 (pin 5 and pin 6 are both D2, internally connected for current handling/thermal). VDS max 20 V; continuous ID = 7.1 A at TA = 25 °C.
7	D1	passive	Drain of N-channel MOSFET #1 (pin 7 and pin 8 are both D1, internally connected for current handling/thermal). VDS max 20 V; continuous ID = 7.1 A at TA = 25 °C.
8	D1	passive	Drain of N-channel MOSFET #1 (pin 7 and pin 8 are both D1, internally connected for current handling/thermal). VDS max 20 V; continuous ID = 7.1 A at TA = 25 °C.

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	SO-8
Category	Transistors/Thyristors
Pins	8

Ordering variants

Same part, different packaging or reel option.

SI9926BDY-T1-E3-VB

CAD (KiCad official)

Symbol: SI9926BDY-T1-E3-VB
Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
3D model: SO-8 (KiCad packages3D, STEP)
3D model files: si9926bdy-t1-e3-vb-etched.step / si9926bdy-t1-e3-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si9926bdy-t1-e3-vb.step / si9926bdy-t1-e3-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (None pp, sha256 d73fb256a53213ce, retrieved 2026-08-17, tier: lcsc)
Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF