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Ray Publish 0.1.0 f69ddc7 12h ago

SI8631BC-B-IS1

Skyworks Solutions · Digital Isolators · SOIC-16

SI8631BC-B-IS1 from Skyworks Solutions, in a SOIC-16. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VDD1 power_in Side 1 power supply, operating range 2.5-5.5 V, requires a 0.1 µF bypass capacitor to GND1.
2 GND1 power_in Side 1 ground; on narrow-body devices it must be externally connected to ground.
3 A1 input Side 1 digital input.
4 A2 input Side 1 digital input.
5 A3 bidirectional Side 1 digital input or output.
6 NC unconnected No connect; not internally connected and can be left floating, tied to VDD or tied to GND.
7 EN1 input Side 1 active-high enable (EN1 on Si8631; NC on Si8630/35); can be left NC, but should be tied to a logic level in noisy environments.
8 GND1 power_in Side 1 ground; on narrow-body devices it must be externally connected to ground.
9 GND2 power_in Side 2 ground; on narrow-body devices it must be externally connected to ground.
10 EN2 input Side 2 active-high enable (NC on Si8635); output is high-impedance when low.
11 NC unconnected No connect; not internally connected and can be left floating, tied to VDD or tied to GND.
12 B3 bidirectional Side 2 digital input or output.
13 B2 output Side 2 digital output.
14 B1 output Side 2 digital output.
15 GND2 power_in Side 2 ground; on narrow-body devices it must be externally connected to ground.
16 VDD2 power_in Side 2 power supply, operating range 2.5-5.5 V, requires a 0.1 µF bypass capacitor to GND2.

Key specifications

Parameter Value
Manufacturer Skyworks Solutions
Package SOIC-16
Category Signal Isolation Devices
Pins 16

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
VDD Undervoltage Threshold rising VDDUV+ 1.95 2.24 2.375 V VDD1, VDD2 rising 11
VDD Undervoltage Threshold falling VDDUV- 1.88 2.16 2.325 V VDD1, VDD2 falling 11
VDD Undervoltage Hysteresis VDDHYS 50 70 95 mV 11
Positive-Going Input Threshold VT+ 1.4 1.67 1.9 V All inputs rising 11
Negative-Going Input Threshold VT- 1 1.23 1.4 V All inputs falling 11
Input Hysteresis VHYS 0.38 0.44 0.5 V 11
High Level Input Voltage VIH 2 V 11
Low Level Input Voltage VIL 0.8 V 11
High Level Output Voltage (5 V) VOH 4.8 V Ioh = -4 mA; min printed as VDD1, VDD2, 0.4; VDD = 5 V ±10% 11
High Level Output Voltage (3.3 V) VOH 3.1 V Ioh = -4 mA; min printed as VDD1, VDD2, 0.4; VDD = 3.3 V ±10% 15
High Level Output Voltage (2.5 V) VOH 2.3 V Ioh = -4 mA; min printed as VDD1, VDD2, 0.4; VDD = 2.5 V ±5% 18
Low Level Output Voltage VOL 0.2 0.4 V Iol = 4 mA 11
Input Leakage Current (Si863xxA/B/C/D) IL 10 µA printed as ±10 11
Enable Input Current (Si863xxA/B/C/D) IENH, IENL 2 µA VENx = VIH or VIL 11
DC Supply Current VDD1, VI = 0 (5 V) 1.3 2.1 mA Si8631Bx; VI = 0(Bx); VDD = 5 V ±10% 12
DC Supply Current VDD2, VI = 0 (5 V) 1.7 2.7 mA Si8631Bx; VI = 0(Bx); VDD = 5 V ±10% 12
DC Supply Current VDD1, VI = 1 (5 V) 3.9 5.9 mA Si8631Bx; VI = 1(Bx); VDD = 5 V ±10% 12
DC Supply Current VDD2, VI = 1 (5 V) 3 4.5 mA Si8631Bx; VI = 1(Bx); VDD = 5 V ±10% 12
1 Mbps Supply Current VDD1 (5 V) 2.7 3.8 mA Si8631Bx; 500 kHz square wave, CI = 15 pF; VDD = 5 V ±10% 12
1 Mbps Supply Current VDD2 (5 V) 2.6 3.6 mA Si8631Bx; 500 kHz square wave, CI = 15 pF; VDD = 5 V ±10% 12
10 Mbps Supply Current VDD1 (5 V) 3 4.2 mA Si8631Bx; 5 MHz square wave, CI = 15 pF; VDD = 5 V ±10% 12
10 Mbps Supply Current VDD2 (5 V) 3.1 4.4 mA Si8631Bx; 5 MHz square wave, CI = 15 pF; VDD = 5 V ±10% 12
100 Mbps Supply Current VDD1 (5 V) 6.6 8.8 mA Si8631Bx; 50 MHz square wave, CI = 15 pF; VDD = 5 V ±10% 12
100 Mbps Supply Current VDD2 (5 V) 9.9 13.4 mA Si8631Bx; 50 MHz square wave, CI = 15 pF; VDD = 5 V ±10% 12
100 Mbps Supply Current VDD1 (3.3 V) 5.2 7 mA Si8631Bx; 50 MHz square wave, CI = 15 pF; VDD = 3.3 V ±10% 16
100 Mbps Supply Current VDD2 (3.3 V) 7.3 9.8 mA Si8631Bx; 50 MHz square wave, CI = 15 pF; VDD = 3.3 V ±10% 16
100 Mbps Supply Current VDD1 (2.5 V) 4.5 6.1 mA Si8631Bx; 50 MHz square wave, CI = 15 pF; VDD = 2.5 V ±5% 19
100 Mbps Supply Current VDD2 (2.5 V) 6.1 8.2 mA Si8631Bx; 50 MHz square wave, CI = 15 pF; VDD = 2.5 V ±5% 19
Maximum Data Rate 0 150 Mbps Si863xBx, Ex 12
Minimum Pulse Width 5 ns 13
Propagation Delay (5 V and 3.3 V) tPHL, tPLH 5 8 13 ns See Figure 4.2; VDD = 5 V ±10% or 3.3 V ±10% 13
Propagation Delay (2.5 V) tPHL, tPLH 5 8 14 ns See Figure 4.2; VDD = 2.5 V ±5% 19
Pulse Width Distortion (5 V and 3.3 V) PWD 0.2 4.5 ns /tPLH, tPHL/; See Figure 4.2; VDD = 5 V ±10% or 3.3 V ±10% 13
Pulse Width Distortion (2.5 V) PWD 0.2 5 ns /tPLH -tPHL/; See Figure 4.2; VDD = 2.5 V ±5% 19
Propagation Delay Skew (5 V and 3.3 V) tPSK(P-P) 2 4.5 ns VDD = 5 V ±10% or 3.3 V ±10% 13
Propagation Delay Skew (2.5 V) tPSK(P-P) 2 5 ns VDD = 2.5 V ±5% 19
Channel-Channel Skew tPSK 0.4 2.5 ns 13
Output Rise Time tr 2.5 4 ns CL = 15 pF; See Figure 4.2 13
Output Fall Time tf 2.5 4 ns CL = 15 pF; See Figure 4.2 13
Common Mode Transient Immunity (Si86xxxB/C/D) CMTI 35 50 kV/µs VI = VDD or 0 V; VCM = 1500 V; See Figure 4.3 13
Enable to Data Valid ten1 6 11 ns See Figure 4.1 13
Enable to Data Tri-State ten2 8 12 ns See Figure 4.1 13
Input power loss to valid default output tSD 8 12 ns See Figure 3.1 13
Start-up Time tSU 15 40 µs 13
Ambient Operating Temperature TA -40 25 125 °C 11
Supply Voltage VDD1 VDD1 2.5 5.5 V 11
Supply Voltage VDD2 VDD2 2.5 5.5 V 11
Storage Temperature TSTG -65 150 °C 25
Junction Temperature TJ 150 °C 25
Supply Voltage VDD1, VDD2 -0.5 7 V 25
Input Voltage VI -0.5 V max printed as VDD + 0.5 25
Output Voltage VO -0.5 V max printed as VDD + 0.5 25
Output Current Drive Channel IO 10 mA 25
Lead Solder Temperature 260 °C 10 s 25
Maximum Isolation (Input to Output), NB SOIC-16 4500 VRMS 1 sec 25
IC Junction-to-Air Thermal Resistance, NB SOIC-16 θJA 105 °C/W 24
Capacitance (Input-Output) CIO 2 pF f = 1 MHz 22

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing PC 4. Recommended card reflow profile is per the JEDEC/IPC J-STD-020 specification for Small Body Components. 31

CAD (KiCad official)

  • Symbol: SI8631BC-B-IS1
  • Footprint: Package_SO:SOIC-16_3.9x9.9mm_P1.27mm
  • 3D model: SOIC-16 (KiCad packages3D, STEP)
  • 3D model files: si8631bc-b-is1-etched.step / si8631bc-b-is1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si8631bc-b-is1.step / si8631bc-b-is1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Skyworks Solutions datasheet (38 pp, sha256 c69ba44cca206b60, retrieved 2026-10-31, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF