component

SI8261BCC-C-ISR

Public Made by Adom

by adom

SKYWORKS SILICON LABS Digital Isolators, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentsignal isolation devicessi8261bcc-c-isrfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
si8261bcc-c-isr / README.md
History Download
Ray Publish 0.1.0 bfd3989 10d ago

SI8261BCC-C-ISR

SKYWORKS SILICON LABS · Digital Isolators · SOIC-8

SI8261BCC-C-ISR from SKYWORKS SILICON LABS, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 NC unconnected No connect; these pins are not internally connected, and should be tied to the ground plane to maximize CMTI performance.
2 ANODE input Anode of the LED emulator; VO follows the signal applied to this input with respect to the CATHODE input.
3 CATHODE input Cathode of the LED emulator; VO follows the signal applied to ANODE with respect to this input.
4 NC unconnected No connect; this pin is not internally connected, and should be tied to the ground plane to maximize CMTI performance.
5 GND power_in External MOSFET source connection and ground reference for VDD; typically connected to ground but may be tied to a negative or positive voltage.
6 VO output Output signal; both VO pins (6 and 7) are required to be shorted together for 4.0 A compliance.
7 VO output Output signal; both VO pins (6 and 7) are required to be shorted together for 4.0 A compliance.
8 VDD power_in Output-side power supply input referenced to GND, 30 V max (recommended operating supply is 6.5 to 30 V).

Key specifications

Parameter Value
Manufacturer SKYWORKS SILICON LABS
Package SOIC-8
Category Signal Isolation Devices
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply Voltage VDD 6.5 30 V 4
Input Current IF(ON) 6 30 mA see Figure 1 4
Operating Temperature (Ambient) TA -40 125 °C 4
Supply Voltage (VDD, GND) VDD 6.5 30 V 4
Supply Current (Output High) IDD 1.8 2.4 mA IF = 10 mA, VDD = 15 V 4
Supply Current (Output High) IDD 2 2.7 mA IF = 10 mA, VDD = 30 V 4
Supply Current (Output Low) IDD 1.5 2.1 mA VF = 0 V; IF = 0 mA, VDD = 15 V 4
Supply Current (Output Low) IDD 1.7 2.4 mA VF = 0 V; IF = 0 mA, VDD = 30 V 4
Input Current Threshold IF(TH) 3.6 mA 4
Input Forward Voltage (OFF) VF(OFF) 1 V Measured at ANODE with respect to CATHODE. 4
Input Forward Voltage (ON) VF(ON) 1.6 2.8 V Measured at ANODE with respect to CATHODE. 4
Output Resistance High (Source) ROH 2.6 5.1 Ω Si826xBxx devices (IOH = -1 A) 4
Output Resistance Low (Sink) ROL 0.8 2 Ω Si826xBxx devices (IOL = 2 A) 4
Output High Current (Source) IOH 0.5 1.8 A Si826xBxx devices (IF = 0), (tPW_IOH < 250 ns), (VDD -VO = 7.5 V) 5
Output Low Current (Sink) IOL 1.2 4 A Si826xBxx devices (IF = 10 mA), (tPW_IOL < 250 ns), (VO - GND = 4.2 V) 5
High-Level Output Voltage (VDD-referenced offset) VOH -0.5 -0.25 V (relative to VDD) Si826xBxx devices (IOUT = -100 mA); printed as VDD-0.5 (min) and VDD-0.25 (typ) 5
Low-Level Output Voltage VOL 80 200 mV Si826xBxx devices (IOUT = 100 mA), (IF = 10 mA) 5
UVLO Threshold + (Si826xxCx mode) VDDUV+ 10.5 12 13.5 V VDD rising; see Figure 13 6
UVLO Threshold, (Si826xxCx mode) VDDUV- 9.4 10.7 12.2 V VDD falling; see Figure 13 6
Input noise filter cut-off pulse width tNFC 15 ns 6
Propagation delay (Low-to-High) tPLH 20 40 60 ns CL = 200 pF 6
Propagation delay (High-to-Low) tPHL 10 30 50 ns CL = 200 pF 6
Pulse Width Distortion PWD 17 28 ns /tPLH -tPHL/ 6
Propagation Delay Difference PDD -1 25 ns tPHLMAX -tPLHMIN 6
Rise time tR 5.5 15 ns CL = 200 pF 6
Fall time tF 8.5 20 ns CL = 200 pF 6
Device Startup Time tSTART 16 30 µs 6
Common Mode Transient Immunity CMTI 35 50 kV/µs Output = low or high (VCM = 1500 V), (IF > 6 mA) (See Figure 4) 6
Storage Temperature TSTG -65 150 °C 13
Operating Temperature TA -40 125 °C 13
Junction Temperature TJ 140 °C 13
Average Forward Input Current IF(AVG) 30 mA 13
Peak Transient Input Current IFTR 1 A < 1 µs pulse width, 300 ps 13
Reverse Input Voltage VR 0.3 V 13
Supply Voltage (absolute) VDD -0.5 36 V 13
Output Voltage VOUT -0.5 36 V 13
Peak Output Current (4.0 Amp versions) IOPK 4 A tPW = 10 µs, duty cycle = 0.2% 13
Input Power Dissipation PI 75 mW 13
Output Power Dissipation PO 225 mW 13
Total Power Dissipation PT 300 mW all packages limited by thermal derating curve 13
Lead Solder Temperature 260 °C 10 s 13
HBM Rating ESD ESD 4 kV 13
Machine Model ESD ESD 300 V 13
CDM ESD CDM 2000 V 13
Maximum Isolation Voltage (1 s) SOIC-8 4500 VRMS 1 s, SOIC-8 column 13
IC Junction-to-Air Thermal Resistance (SOIC-8) JA 110 °C/W SOIC-8 column 11
UVLO lockout hysteresis (Si826xxCx mode) VDDHYS 1.3 V 6
Input Current Hysteresis IHYS 0.34 mA 4
Input Capacitance CI 15 pF f = 100 kHz, VF = 0 V 4
Minimum pulse width tPMIN 30 ns 6
High-Level Output Voltage (VDD-referenced offset) VOH 0 V (relative to VDD) Si826xBxx devices (IOUT = 0 mA), (IF = 0 mA); printed as VDD 5

CAD (KiCad official)

  • Symbol: SI8261BCC-C-ISR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: si8261bcc-c-isr-etched.step / si8261bcc-c-isr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si8261bcc-c-isr.step / si8261bcc-c-isr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SKYWORKS SILICON LABS datasheet (40 pp, sha256 0b10b67ed5aa18f6, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF