main
Ray Set visibility: public 6ebebbb 13d ago
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{
  "schema_version": 1,
  "type": "component",
  "slug": "si7960dp-vb",
  "title": "SI7960DP-VB",
  "brief": "VBsemi Elec MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
    "component",
    "transistors-thyristors",
    "si7960dp-vb",
    "factory-2.0.0",
    "extractor-text"
  ],
  "component": {
    "mpn": "SI7960DP-VB",
    "manufacturer": "VBsemi Elec",
    "package": "DFN5x6-8",
    "pin_count": 9,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8609142866128629760",
    "parts": {
      "symbol": "si7960dp-vb.kicad_sym",
      "footprint": "si7960dp-vb.kicad_mod",
      "model_3d": "si7960dp-vb-hero.glb",
      "model_3d_plain": "si7960dp-vb-etched.glb",
      "model_3d_step": "si7960dp-vb-etched.step",
      "model_3d_step_plain": "si7960dp-vb.step",
      "lbr": "si7960dp-vb.lbr"
    },
    "distributor_links": {
      "lcsc": "C20755190"
    },
    "distributor_check": {
      "checked_at": "2026-10-21T01:48:55Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "no match"
      },
      "mouser": {
        "pn": null,
        "status": "no match"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "S1",
        "type": "passive",
        "description": "Source of N-channel MOSFET 1 (60 V VDS rating)."
      },
      {
        "number": "2",
        "name": "G1",
        "type": "input",
        "description": "Gate of N-channel MOSFET 1 (VGS maximum ±20 V)."
      },
      {
        "number": "3",
        "name": "S2",
        "type": "passive",
        "description": "Source of N-channel MOSFET 2 (60 V VDS rating)."
      },
      {
        "number": "4",
        "name": "G2",
        "type": "input",
        "description": "Gate of N-channel MOSFET 2 (VGS maximum ±20 V)."
      },
      {
        "number": "5",
        "name": "D2",
        "type": "passive",
        "description": "Drain of N-channel MOSFET 2, internally common with pins 5 and 6 (60 V VDS rating)."
      },
      {
        "number": "6",
        "name": "D2",
        "type": "passive",
        "description": "Drain of N-channel MOSFET 2, internally common with pins 5 and 6 (60 V VDS rating)."
      },
      {
        "number": "7",
        "name": "D1",
        "type": "passive",
        "description": "Drain of N-channel MOSFET 1, internally common with pins 7 and 8 (60 V VDS rating)."
      },
      {
        "number": "8",
        "name": "D1",
        "type": "passive",
        "description": "Drain of N-channel MOSFET 1, internally common with pins 7 and 8 (60 V VDS rating)."
      },
      {
        "number": "9",
        "name": "EP",
        "type": "passive",
        "description": "Exposed pad (from the footprint; not named in the datasheet pin table)."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-haiku-5-5",
        "primary_mode": "text",
        "consensus_model": "claude-sonnet-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The pin diagram text on page 1 is garbled. Pin 1 (S2) and pin 2 (S1) are inferred from the surroundi; The text shows 'D1' as an unnumbered label and a lone '5' after 'D2 6', so pin 5 = D1 is an inferenc; G1 = pin 3 and G2 = pin 4 are read directly from the labels '3 G1' and '4 G2' on page 1, but the dia",
          "exposed pad 9 added from the footprint"
        ],
        "pages_sent": 7,
        "cost_usd": 0.0451,
        "at": "2026-10-21T01:45:40"
      },
      "datasheet": {
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        "pages": 7,
        "sha256": "071f74a7cc2c2dc1",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 9,
        "described": 9,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
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        "role": "plain",
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        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
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        "footprint_binding": "identity",
        "sha256": "13e5a2a05f78c2a0952534b2fb187d0be154d366a431374e398c7e2032779f1b",
        "checked": "2026-10-21",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      },
      {
        "file": "si7960dp-vb-etched.step",
        "role": "eda",
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        "origin": "footprint origin = pad-pattern centre",
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        "sha256": "1c2e6b640d0bd4686ecc8bb18222eeffc9a4ba5711ba2533118b3a56e17a0f63",
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      "Manufacturer": "VBsemi Elec",
      "Package": "DFN5x6-8",
      "Category": "Transistors/Thyristors",
      "Pins": "9"
    },
    "appearance": {
      "contacts": {
        "quote": "d. The DFN 5x6 package is a leadless package. The end of the lead terminal is exposed copper",
        "page": 1,
        "doc": "ds.pdf",
        "material": "copper"
      },
      "version": 1,
      "datasheet_sha256": "071f74a7cc2c2dc1102a4c6fad969ce764724e26024c4ea04c72cac057cf03e9"
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          "conditions": "TA = 25 °C (note a)",
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          "name": "Source-drain diode current",
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          "max": 3,
          "conditions": "TA = 25 °C (notes b, c)",
          "source_page": 1,
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        },
        {
          "name": "Maximum power dissipation",
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          "conditions": "TC = 25 °C",
          "source_page": 1,
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        },
        {
          "name": "Maximum power dissipation",
          "symbol": "PD",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 14,
          "conditions": "TC = 70 °C",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Maximum power dissipation",
          "symbol": "PD",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 3.6,
          "conditions": "TA = 25 °C (notes b, c)",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Maximum power dissipation",
          "symbol": "PD",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 2.3,
          "conditions": "TA = 70 °C (notes b, c)",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Operating junction and storage temperature range",
          "symbol": "TJ, Tstg",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
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        {
          "name": "Soldering recommendations (peak temperature)",
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          "source": "datasheet"
        },
        {
          "name": "Maximum junction-to-ambient",
          "symbol": "RthJA",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": 26,
          "max": 35,
          "conditions": "t = 10 s (notes b, f)",
          "source_page": 1,
          "source": "datasheet"
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          "name": "Maximum junction-to-ambient",
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          "max": 80,
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        {
          "name": "Maximum junction-to-case (drain)",
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        {
          "name": "Drain-source breakdown voltage",
          "symbol": "VDS",
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          "min": 60,
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        {
          "name": "Gate threshold voltage",
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          "min": 1.2,
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          "conditions": "VDS = VGS, ID = 250 μA",
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          "name": "Gate-body leakage",
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          "kind": "electrical",
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          "max": 100,
          "conditions": "VDS = 0 V, VGS = ±20 V",
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          "name": "Zero gate voltage drain current",
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          "kind": "electrical",
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          "name": "Zero gate voltage drain current",
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          "kind": "electrical",
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          "min": null,
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          "conditions": "VDS = 60 V, VGS = 0 V, TJ = 85 °C",
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          "name": "On-state drain current",
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          "kind": "electrical",
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          "min": 60,
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          "conditions": "VDS ≥ 5 V, VGS = 10 V",
          "source_page": 2,
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          "name": "Gate resistance",
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          "kind": "electrical",
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          "typ": 0.6,
          "max": 1.2,
          "conditions": "f = 1 MHz",
          "source_page": 2,
          "source": "datasheet"
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          "name": "Total gate charge",
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          "kind": "electrical",
          "unit": "nC",
          "min": null,
          "typ": 15.2,
          "max": 23,
          "conditions": "VDS = 30 V, VGS = 10 V, ID = 11 A",
          "source_page": 2,
          "source": "datasheet"
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          "name": "Turn-on delay time",
          "symbol": "td(on)",
          "kind": "timing",
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          "min": null,
          "typ": 15,
          "max": 120,
          "conditions": "VDD = 30 V, RL = 3.45 Ω, ID 8.7 A, VGEN = 4.5 V, Rg = 1 Ω",
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          "name": "Rise time",
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          "min": null,
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          "max": 30,
          "conditions": "VDD = 30 V, RL = 3.45 Ω, ID 8.7 A, VGEN = 4.5 V, Rg = 1 Ω",
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        {
          "name": "Turn-off delay time",
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          "min": null,
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          "conditions": "VDD = 30 V, RL = 3.45 Ω, ID 8.7 A, VGEN = 4.5 V, Rg = 1 Ω",
          "source_page": 2,
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          "name": "Fall time",
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          "conditions": "VDD = 30 V, RL = 3.45 Ω, ID 8.7 A, VGEN = 4.5 V, Rg = 1 Ω",
          "source_page": 2,
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        {
          "name": "Rise time",
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          "max": 40,
          "conditions": "VDD = 30 V, RL = 3.45 Ω, ID 8.7 A, VGEN = 10 V, Rg = 1 Ω",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Turn-off delay time",
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          "min": null,
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          "conditions": "VDD = 30 V, RL = 3.45 Ω, ID 8.7 A, VGEN = 10 V, Rg = 1 Ω",
          "source_page": 2,
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          "source_page": 2,
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          "source_page": 2,
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          "min": null,
          "typ": null,
          "max": 40,
          "conditions": "",
          "source_page": 2,
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          "name": "Body diode voltage",
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          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": 0.8,
          "max": 1.2,
          "conditions": "IS = 8.7 A",
          "source_page": 2,
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        },
        {
          "name": "Body diode reverse recovery charge",
          "symbol": "Qrr",
          "kind": "electrical",
          "unit": "nC",
          "min": null,
          "typ": 30,
          "max": 45,
          "conditions": "IF = 8.7 A, di/dt = 100 A/μs, TJ = 25 °C",
          "source_page": 2,
          "source": "datasheet"
        }
      ]
    }
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  "author": {
    "name": "Ray",
    "email": "[email protected]"
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