# SI7139DP-T1-GE3-VB

**VBsemi Elec** · MOSFETs · DFN5x6-8

SI7139DP-T1-GE3-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET, with VDS rated at -30 V and continuous drain current of -120 A at TC = 25 °C (package limited). |
| 2 | S | passive | Source terminal of the P-channel MOSFET, with VDS rated at -30 V and continuous drain current of -120 A at TC = 25 °C (package limited). |
| 3 | S | passive | Source terminal of the P-channel MOSFET, with VDS rated at -30 V and continuous drain current of -120 A at TC = 25 °C (package limited). |
| 4 | G | input | Gate terminal of the P-channel MOSFET, with gate-source voltage rated at ±20 V and threshold VGS(th) between -1.0 V and -3.0 V. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET, with RDS(on) of 0.004 Ω at VGS = -10 V and pulsed drain current of -280 A. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET, with RDS(on) of 0.004 Ω at VGS = -10 V and pulsed drain current of -280 A. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET, with RDS(on) of 0.004 Ω at VGS = -10 V and pulsed drain current of -280 A. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET, with RDS(on) of 0.004 Ω at VGS = -10 V and pulsed drain current of -280 A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | DFN5x6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |

## Materials and finish

As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).

| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper |  | d. The DFN5x6 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cann | 1 |

## CAD (KiCad official)

- Symbol: `SI7139DP-T1-GE3-VB`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files: `si7139dp-t1-ge3-vb-etched.step` / `si7139dp-t1-ge3-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si7139dp-t1-ge3-vb.step` / `si7139dp-t1-ge3-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/si7139dp-t1-ge3-vb-datasheet.pdf) (8 pp, sha256 `2292e17d0a21d67c`, retrieved 2026-11-02, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/si7139dp-t1-ge3-vb-datasheet.pdf)