# SI6435ADQ-T1-GE3-VB

**VBsemi Elec** · MOSFETs · TSSOP-8

SI6435ADQ-T1-GE3-VB from VBsemi Elec, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain terminal of the P-channel MOSFET; VDS is -20 V (absolute maximum, drain-source voltage). |
| 2 | S | passive | Source terminal; the datasheet requires source pins 2, 3, 6 and 7 to be tied common. |
| 3 | S | passive | Source terminal; the datasheet requires source pins 2, 3, 6 and 7 to be tied common. |
| 4 | G | input | Gate terminal; the gate-source voltage is rated at ±12 V (absolute maximum, VGS). |
| 5 | D | passive | Drain terminal of the P-channel MOSFET; VDS is -20 V (absolute maximum, drain-source voltage). |
| 6 | S | passive | Source terminal; the datasheet requires source pins 2, 3, 6 and 7 to be tied common. |
| 7 | S | passive | Source terminal; the datasheet requires source pins 2, 3, 6 and 7 to be tied common. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET; VDS is -20 V (absolute maximum, drain-source voltage). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TSSOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 |  |  | V |  | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 1 |
| Continuous Drain Current (TJ = 150 °C), 10 s | -ID |  |  | 9 | A | TA = 25 °C, t ≤ 10 s | 1 |
| Continuous Drain Current (TJ = 150 °C), steady state | -ID |  |  | -7.8 | A | TA = 25 °C, steady state | 1 |
| Continuous Drain Current (TJ = 150 °C), 10 s | -ID |  |  | 6.8 | A | TA = 70 °C, t ≤ 10 s | 1 |
| Continuous Drain Current (TJ = 150 °C), steady state | -ID |  |  | -5.8 | A | TA = 70 °C, steady state | 1 |
| Pulsed Drain Current | IDM | -30 |  |  | A | 10 µs pulse width | 1 |
| Continuous Source Current (Diode Conduction) | IS | -1.35 |  |  | A | t ≤ 10 s | 1 |
| Continuous Source Current (Diode Conduction) | IS | -0.95 |  |  | A | steady state | 1 |
| Maximum Power Dissipation | PD |  |  | 1.5 | W | TA = 25 °C, t ≤ 10 s | 1 |
| Maximum Power Dissipation | PD |  |  | 1.05 | W | TA = 25 °C, steady state | 1 |
| Maximum Power Dissipation | PD |  |  | 1 | W | TA = 70 °C, t ≤ 10 s | 1 |
| Maximum Power Dissipation | PD |  |  | 0.67 | W | TA = 70 °C, steady state | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Gate Threshold Voltage | VGS(th) | -0.45 |  | -1 | V | VDS = VGS, ID = - 450 µA | 2 |
| Gate-Body Leakage | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ± 8 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | µA | VDS = - 20 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -25 | µA | VDS = -20 V, VGS = 0 V, TJ = 70 °C | 2 |
| On-State Drain Current | ID(on) | -20 |  |  | A | VDS = - 5 V, VGS = - 4.5 V | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.01 | Ω | VGS = - 4.5 V, ID = - 8.0 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.012 | Ω | VGS = - 2.5 V, ID = - 7.0 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.016 | Ω | VGS = - 1.8 V, ID = - 5.8 A | 2 |
| Diode Forward Voltage | VSD |  | -0.56 | -1.1 | V | IS = - 1.5 A, VGS = 0 V | 2 |
| Total Gate Charge | Qg |  | 46 | 70 | nC | VDS = - 10 V, VGS = - 4.5 V, ID = - 8.0 A | 2 |
| Turn-On Delay Time | td(on) |  | 45 | 70 | ns | VDD = - 10 V, R = 6 Ω; ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω | 2 |
| Rise Time | tr |  | 85 | 130 | ns | VDD = - 10 V, R = 6 Ω; ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 220 | 400 | ns | VDD = - 10 V, R = 6 Ω; ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω | 2 |
| Fall Time | tf |  | 155 | 235 | ns | VDD = - 10 V, R = 6 Ω; ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω | 2 |
| Source-Drain Reverse Recovery Time | trr |  | 140 | 210 | ns | IF = - 1.5 A, di/dt = 100 A/µs | 2 |
| Maximum Junction-to-Ambient | RthJA |  | 65 | 83 | °C/W | t ≤ 10 s | 1 |
| Maximum Junction-to-Ambient | RthJA |  | 100 | 120 | °C/W | steady state | 1 |
| Maximum Junction-to-Foot (Drain) | RthJF |  | 43 | 52 | °C/W | steady state | 1 |

## CAD (KiCad official)

- Symbol: `SI6435ADQ-T1-GE3-VB`
- Footprint: `Package_SO:TSSOP-8_4.4x3mm_P0.65mm`
- 3D model: TSSOP-8 (KiCad packages3D, STEP)
- 3D model files: `si6435adq-t1-ge3-vb-etched.step` / `si6435adq-t1-ge3-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si6435adq-t1-ge3-vb.step` / `si6435adq-t1-ge3-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/si6435adq-t1-ge3-vb-datasheet.pdf) (8 pp, sha256 `5a0b437baaac4b45`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/si6435adq-t1-ge3-vb-datasheet.pdf)