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SI6435ADQ-T1-GE3-VB

Public Made by Adom

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VBsemi Elec MOSFETs, TSSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Verified SI6435ADQ-T1-GE3-VB

by Ray · last 5 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

5 Nov 2026RayPublished by the parts factory: tier lcsc, 8 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: SI6435ADQ-T1-GE3-VB · TSSOP-8 · 8 pins
  • ✓copper: 8 copper pads, none touching another net
  • ✓datasheet: all 8 pin names found in the 8-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TSSOP-8_4.4x3mm_P0.65mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-9o30tesu/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.6)
  • ✓pads: 8 pins = 8 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 8 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ si6435adq-t1-ge3-vb.kicad_sym✓ si6435adq-t1-ge3-vb.kicad_mod✓ si6435adq-t1-ge3-vb.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 19h ago
viewers si6435adq-t1-ge3-vb: viewers · Ray 19h ago
package.json Publish 0.1.0 · Ray 19h ago
page.json Set visibility: public · Ray 19h ago
README.md Publish 0.1.0 · Ray 19h ago
si6435adq-t1-ge3-vb-etched.glb Publish 0.1.0 · Ray 19h ago
si6435adq-t1-ge3-vb-etched.step si6435adq-t1-ge3-vb: factory component page (tier=lcsc) · Ray 19h ago
si6435adq-t1-ge3-vb-hero.glb si6435adq-t1-ge3-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 19h ago
si6435adq-t1-ge3-vb-hero.overlay.json Publish 0.1.0 · Ray 19h ago
si6435adq-t1-ge3-vb.glb Publish 0.1.0 · Ray 19h ago
si6435adq-t1-ge3-vb.kicad_mod Publish 0.1.0 · Ray 19h ago
si6435adq-t1-ge3-vb.kicad_sym Publish 0.1.0 · Ray 19h ago
si6435adq-t1-ge3-vb.lbr Publish 0.1.0 · Ray 19h ago
si6435adq-t1-ge3-vb.step Publish 0.1.0 · Ray 19h ago
verification.json Verified: Published by the parts factory: tier lcsc, 8 pins · Ray 19h ago

SI6435ADQ-T1-GE3-VB

VBsemi Elec · MOSFETs · TSSOP-8

SI6435ADQ-T1-GE3-VB from VBsemi Elec, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain terminal of the P-channel MOSFET; VDS is -20 V (absolute maximum, drain-source voltage).
2 S passive Source terminal; the datasheet requires source pins 2, 3, 6 and 7 to be tied common.
3 S passive Source terminal; the datasheet requires source pins 2, 3, 6 and 7 to be tied common.
4 G input Gate terminal; the gate-source voltage is rated at ±12 V (absolute maximum, VGS).
5 D passive Drain terminal of the P-channel MOSFET; VDS is -20 V (absolute maximum, drain-source voltage).
6 S passive Source terminal; the datasheet requires source pins 2, 3, 6 and 7 to be tied common.
7 S passive Source terminal; the datasheet requires source pins 2, 3, 6 and 7 to be tied common.
8 D passive Drain terminal of the P-channel MOSFET; VDS is -20 V (absolute maximum, drain-source voltage).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TSSOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current (TJ = 150 °C), 10 s -ID 9 A TA = 25 °C, t ≤ 10 s 1
Continuous Drain Current (TJ = 150 °C), steady state -ID -7.8 A TA = 25 °C, steady state 1
Continuous Drain Current (TJ = 150 °C), 10 s -ID 6.8 A TA = 70 °C, t ≤ 10 s 1
Continuous Drain Current (TJ = 150 °C), steady state -ID -5.8 A TA = 70 °C, steady state 1
Pulsed Drain Current IDM -30 A 10 µs pulse width 1
Continuous Source Current (Diode Conduction) IS -1.35 A t ≤ 10 s 1
Continuous Source Current (Diode Conduction) IS -0.95 A steady state 1
Maximum Power Dissipation PD 1.5 W TA = 25 °C, t ≤ 10 s 1
Maximum Power Dissipation PD 1.05 W TA = 25 °C, steady state 1
Maximum Power Dissipation PD 1 W TA = 70 °C, t ≤ 10 s 1
Maximum Power Dissipation PD 0.67 W TA = 70 °C, steady state 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Gate Threshold Voltage VGS(th) -0.45 -1 V VDS = VGS, ID = - 450 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 8 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = - 20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -25 µA VDS = -20 V, VGS = 0 V, TJ = 70 °C 2
On-State Drain Current ID(on) -20 A VDS = - 5 V, VGS = - 4.5 V 2
Drain-Source On-State Resistance RDS(on) 0.01 Ω VGS = - 4.5 V, ID = - 8.0 A 2
Drain-Source On-State Resistance RDS(on) 0.012 Ω VGS = - 2.5 V, ID = - 7.0 A 2
Drain-Source On-State Resistance RDS(on) 0.016 Ω VGS = - 1.8 V, ID = - 5.8 A 2
Diode Forward Voltage VSD -0.56 -1.1 V IS = - 1.5 A, VGS = 0 V 2
Total Gate Charge Qg 46 70 nC VDS = - 10 V, VGS = - 4.5 V, ID = - 8.0 A 2
Turn-On Delay Time td(on) 45 70 ns VDD = - 10 V, R = 6 Ω; ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω 2
Rise Time tr 85 130 ns VDD = - 10 V, R = 6 Ω; ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω 2
Turn-Off Delay Time td(off) 220 400 ns VDD = - 10 V, R = 6 Ω; ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω 2
Fall Time tf 155 235 ns VDD = - 10 V, R = 6 Ω; ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω 2
Source-Drain Reverse Recovery Time trr 140 210 ns IF = - 1.5 A, di/dt = 100 A/µs 2
Maximum Junction-to-Ambient RthJA 65 83 °C/W t ≤ 10 s 1
Maximum Junction-to-Ambient RthJA 100 120 °C/W steady state 1
Maximum Junction-to-Foot (Drain) RthJF 43 52 °C/W steady state 1

CAD (KiCad official)

  • Symbol: SI6435ADQ-T1-GE3-VB
  • Footprint: Package_SO:TSSOP-8_4.4x3mm_P0.65mm
  • 3D model: TSSOP-8 (KiCad packages3D, STEP)
  • 3D model files: si6435adq-t1-ge3-vb-etched.step / si6435adq-t1-ge3-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si6435adq-t1-ge3-vb.step / si6435adq-t1-ge3-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 5a0b437baaac4b45, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF