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SI4936ADY-T1-E3-HXY

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HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI4936ADY-T1-E3-HXY

HXY MOSFET · MOSFETs · SOP-8

SI4936ADY-T1-E3-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of N-channel MOSFET 1, paired with gate G1 and drain D1 in the dual-FET package.
2 G1 input Gate of N-channel MOSFET 1, rated VGS ±20 V (absolute maximum) and specified for operation at gate voltages as low as 2.5 V.
3 S2 passive Source terminal of N-channel MOSFET 2, paired with gate G2 and drain D2 in the dual-FET package.
4 G2 input Gate of N-channel MOSFET 2, rated VGS ±20 V (absolute maximum) and specified for operation at gate voltages as low as 2.5 V.
5 D2 passive Drain terminal of N-channel MOSFET 2, rated VDS 30 V (absolute maximum).
6 D2 passive Drain terminal of N-channel MOSFET 2 (second drain pin, internally tied to pin 5), rated VDS 30 V (absolute maximum).
7 D1 passive Drain terminal of N-channel MOSFET 1, rated VDS 30 V (absolute maximum).
8 D1 passive Drain terminal of N-channel MOSFET 1 (second drain pin, internally tied to pin 7), rated VDS 30 V (absolute maximum).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS 20 V 1
Drain Current ID 6 A TA=25℃; VGS @ 4.5V 1
Drain Current ID 5 A TA=70℃; VGS @ 4.5V 1
Pulsed Drain Current IDM 30 A 1
Total Power Dissipation PD 2 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Maximum Thermal Resistance, Junction-ambient Rthj-a 62.5 ℃/W Junction-to-ambient, note 3 1
Drain-Source Breakdown Voltage BVDSS 30 V ID=-250µA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS=30V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 5 µA VDS=30V, VGS=0V, TJ=55°C 2
Gate-Body leakage current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 1.2 1.8 2.4 V VDS=VGS, ID=250µA 2
On state drain current ID(ON) 30 A VGS=10V, VDS=5V 2
Static Drain-Source On-Resistance RDS(ON) 25 30 mΩ VGS=10V, ID=6A 2
Static Drain-Source On-Resistance RDS(ON) 33 42 mΩ VGS=4.5V, ID=5A 2
Static Drain-Source On-Resistance RDS(ON) 40 48 mΩ TJ=125°C 2
Diode Forward Voltage VSD 0.76 1 V IS=1A, VGS=0V 2
Maximum Body-Diode Continuous Current IS 2.5 A 2
Input Capacitance Ciss 255 310 pF VGS=0V, VDS=15V, f=1MHz 2
Reverse Transfer Capacitance Crss 35 50 pF VGS=0V, VDS=15V, f=1MHz 2
Gate resistance Rg 1.6 3.25 4.9 Ω VGS=0V, VDS=0V, f=1MHz 2
Total Gate Charge Qg(10V) 5.2 6.3 nC VGS=10V, VDS=15V, ID=6A 2
Total Gate Charge Qg(4.5V) 2.55 3.2 nC 2

CAD (KiCad official)

  • Symbol: SI4936ADY-T1-E3-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: si4936ady-t1-e3-hxy-etched.step / si4936ady-t1-e3-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4936ady-t1-e3-hxy.step / si4936ady-t1-e3-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 348c3283d138cd08, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF