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SI4936ADY-T1-E3-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI4936ADY-T1-E3-HXY
HXY MOSFET · MOSFETs · SOP-8
SI4936ADY-T1-E3-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of N-channel MOSFET 1, paired with gate G1 and drain D1 in the dual-FET package. |
| 2 | G1 | input | Gate of N-channel MOSFET 1, rated VGS ±20 V (absolute maximum) and specified for operation at gate voltages as low as 2.5 V. |
| 3 | S2 | passive | Source terminal of N-channel MOSFET 2, paired with gate G2 and drain D2 in the dual-FET package. |
| 4 | G2 | input | Gate of N-channel MOSFET 2, rated VGS ±20 V (absolute maximum) and specified for operation at gate voltages as low as 2.5 V. |
| 5 | D2 | passive | Drain terminal of N-channel MOSFET 2, rated VDS 30 V (absolute maximum). |
| 6 | D2 | passive | Drain terminal of N-channel MOSFET 2 (second drain pin, internally tied to pin 5), rated VDS 30 V (absolute maximum). |
| 7 | D1 | passive | Drain terminal of N-channel MOSFET 1, rated VDS 30 V (absolute maximum). |
| 8 | D1 | passive | Drain terminal of N-channel MOSFET 1 (second drain pin, internally tied to pin 7), rated VDS 30 V (absolute maximum). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | 20 | V | 1 | |||
| Drain Current | ID | 6 | A | TA=25℃; VGS @ 4.5V | 1 | ||
| Drain Current | ID | 5 | A | TA=70℃; VGS @ 4.5V | 1 | ||
| Pulsed Drain Current | IDM | 30 | A | 1 | |||
| Total Power Dissipation | PD | 2 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | 62.5 | ℃/W | Junction-to-ambient, note 3 | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | ID=-250µA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=30V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | µA | VDS=30V, VGS=0V, TJ=55°C | 2 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.8 | 2.4 | V | VDS=VGS, ID=250µA | 2 |
| On state drain current | ID(ON) | 30 | A | VGS=10V, VDS=5V | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 25 | 30 | mΩ | VGS=10V, ID=6A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 33 | 42 | mΩ | VGS=4.5V, ID=5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 40 | 48 | mΩ | TJ=125°C | 2 | |
| Diode Forward Voltage | VSD | 0.76 | 1 | V | IS=1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 2.5 | A | 2 | |||
| Input Capacitance | Ciss | 255 | 310 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 35 | 50 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | |
| Gate resistance | Rg | 1.6 | 3.25 | 4.9 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge | Qg(10V) | 5.2 | 6.3 | nC | VGS=10V, VDS=15V, ID=6A | 2 | |
| Total Gate Charge | Qg(4.5V) | 2.55 | 3.2 | nC | 2 |
CAD (KiCad official)
- Symbol:
SI4936ADY-T1-E3-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
si4936ady-t1-e3-hxy-etched.step/si4936ady-t1-e3-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si4936ady-t1-e3-hxy.step/si4936ady-t1-e3-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (7 pp, sha256
348c3283d138cd08, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).