# SI4925BDY-T1-E3-HXY

**HXY MOSFET** · MOSFETs · SOP-8

SI4925BDY-T1-E3-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (dual P-channel, VDS = -30 V, ID = -11 A continuous per the absolute maximum ratings). |
| 2 | G1 | input | Gate of MOSFET 1; gate-source voltage is rated ±20 V. |
| 3 | S2 | passive | Source of MOSFET 2 (dual P-channel, VDS = -30 V, ID = -11 A continuous per the absolute maximum ratings). |
| 4 | G2 | input | Gate of MOSFET 2; gate-source voltage is rated ±20 V. |
| 5 | D2 | passive | Drain of MOSFET 2, tied internally to pin 6; drain-source voltage is rated -30 V. |
| 6 | D2 | passive | Drain of MOSFET 2, tied internally to pin 5; drain-source voltage is rated -30 V. |
| 7 | D1 | passive | Drain of MOSFET 1, tied internally to pin 8; drain-source voltage is rated -30 V. |
| 8 | D1 | passive | Drain of MOSFET 1, tied internally to pin 7; drain-source voltage is rated -30 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 |  |  | V | TA=25℃ unless otherwise noted | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | TA=25℃ unless otherwise noted | 1 |
| Drain Current-Continuous | ID | -11 |  |  | A | TA=25℃ unless otherwise noted | 1 |
| Drain Current-Pulsed (Note 1) | IDM | -40 |  |  | A | TA=25℃ unless otherwise noted | 1 |
| Maximum Power Dissipation | PD |  |  | 3.7 | W | TA=25℃ unless otherwise noted | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Ambient (Note 2) | RθJA |  | 33.8 |  | ℃/W | Junction-to-Ambient (Note 2) | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 |  |  | V | VGS=0V, ID=-250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | μA | VDS=-30V, VGS=0V | 2 |
| Gate to Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.6 | -2.5 | V | VDS=VGS, ID=-250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) |  | 14 | 18 | mΩ | VGS=-10V, ID=-10A | 2 |
| Static Drain-Source on-Resistance | RDS(on) |  |  | 20 | mΩ | VGS=-4.5V, ID=-5A | 2 |
| Maximum Continuous Drain to Source Diode Forward Current | IS |  |  | -11 | A |  | 2 |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM |  |  | -40 | A |  | 2 |
| Drain to Source Diode Forward Voltage | VSD |  | -0.8 | -1.2 | V | VGS=0V, IS=-15A | 2 |

## CAD (KiCad official)

- Symbol: `SI4925BDY-T1-E3-HXY`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `si4925bdy-t1-e3-hxy-etched.step` / `si4925bdy-t1-e3-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si4925bdy-t1-e3-hxy.step` / `si4925bdy-t1-e3-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590909222085611520) (7 pp, sha256 `b89d70f192d2918f`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/si4925bdy-t1-e3-hxy-datasheet.pdf)