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SI4925BDY-T1-E3-HXY

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HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI4925BDY-T1-E3-HXY

HXY MOSFET · MOSFETs · SOP-8

SI4925BDY-T1-E3-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (dual P-channel, VDS = -30 V, ID = -11 A continuous per the absolute maximum ratings).
2 G1 input Gate of MOSFET 1; gate-source voltage is rated ±20 V.
3 S2 passive Source of MOSFET 2 (dual P-channel, VDS = -30 V, ID = -11 A continuous per the absolute maximum ratings).
4 G2 input Gate of MOSFET 2; gate-source voltage is rated ±20 V.
5 D2 passive Drain of MOSFET 2, tied internally to pin 6; drain-source voltage is rated -30 V.
6 D2 passive Drain of MOSFET 2, tied internally to pin 5; drain-source voltage is rated -30 V.
7 D1 passive Drain of MOSFET 1, tied internally to pin 8; drain-source voltage is rated -30 V.
8 D1 passive Drain of MOSFET 1, tied internally to pin 7; drain-source voltage is rated -30 V.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V TA=25℃ unless otherwise noted 1
Gate-Source Voltage VGS -20 20 V TA=25℃ unless otherwise noted 1
Drain Current-Continuous ID -11 A TA=25℃ unless otherwise noted 1
Drain Current-Pulsed (Note 1) IDM -40 A TA=25℃ unless otherwise noted 1
Maximum Power Dissipation PD 3.7 W TA=25℃ unless otherwise noted 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient (Note 2) RθJA 33.8 ℃/W Junction-to-Ambient (Note 2) 1
Drain-Source Breakdown Voltage V(BR)DSS -30 V VGS=0V, ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-30V, VGS=0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) -1 -1.6 -2.5 V VDS=VGS, ID=-250μA 2
Static Drain-Source on-Resistance RDS(on) 14 18 mΩ VGS=-10V, ID=-10A 2
Static Drain-Source on-Resistance RDS(on) 20 mΩ VGS=-4.5V, ID=-5A 2
Maximum Continuous Drain to Source Diode Forward Current IS -11 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM -40 A 2
Drain to Source Diode Forward Voltage VSD -0.8 -1.2 V VGS=0V, IS=-15A 2

CAD (KiCad official)

  • Symbol: SI4925BDY-T1-E3-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: si4925bdy-t1-e3-hxy-etched.step / si4925bdy-t1-e3-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4925bdy-t1-e3-hxy.step / si4925bdy-t1-e3-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 b89d70f192d2918f, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF