SI4848ADY-T1-GE3

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  "version": "0.1.0",
  "type": "component",
  "description": "Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
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  "component": {
    "mpn": "SI4848ADY-T1-GE3",
    "manufacturer": "Vishay Intertech",
    "package": "SO-8",
    "pin_count": 8,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588916599890333697",
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    "distributor_links": {
      "lcsc": "C727435",
      "digikey": "SI4848ADY-T1-GE3TR-ND",
      "mouser": "78-SI4848ADY-T1-GE3"
    },
    "distributor_check": {
      "checked_at": "2026-10-20T21:13:49Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": "SI4848ADY-T1-GE3TR-ND",
        "status": "found",
        "lifecycle": "Active"
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    "pins": [
      {
        "number": "1",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the N-channel MOSFET; the datasheet rates the drain-source voltage at 150 V and the gate-source voltage at ±20 V."
      },
      {
        "number": "2",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the N-channel MOSFET; the datasheet rates the drain-source voltage at 150 V and the gate-source voltage at ±20 V."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the N-channel MOSFET; the datasheet rates the drain-source voltage at 150 V and the gate-source voltage at ±20 V."
      },
      {
        "number": "4",
        "name": "G",
        "type": "input",
        "description": "Gate terminal of the N-channel MOSFET; the absolute maximum gate-source voltage is ±20 V, and the gate-source threshold is 2 to 4 V at ID = 250 µA."
      },
      {
        "number": "5",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the N-channel MOSFET; the datasheet rates the drain-source voltage at 150 V and continuous drain current at 5.5 A at TC = 25 °C."
      },
      {
        "number": "6",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the N-channel MOSFET; the datasheet rates the drain-source voltage at 150 V and continuous drain current at 5.5 A at TC = 25 °C."
      },
      {
        "number": "7",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the N-channel MOSFET; the datasheet rates the drain-source voltage at 150 V and continuous drain current at 5.5 A at TC = 25 °C."
      },
      {
        "number": "8",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the N-channel MOSFET; the datasheet rates the drain-source voltage at 150 V and continuous drain current at 5.5 A at TC = 25 °C."
      }
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