component
SI4825DDY-T1-GE3-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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SI4825DDY-T1-GE3-HXY
HXY MOSFET · MOSFETs · SOP-8
SI4825DDY-T1-GE3-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, tied with pins 2 and 3; continuous drain current is rated -9 A at TA=25℃ with VGS=10V. |
| 2 | S | passive | Source of the P-channel MOSFET, tied with pins 1 and 3; continuous drain current is rated -9 A at TA=25℃ with VGS=10V. |
| 3 | S | passive | Source of the P-channel MOSFET, tied with pins 1 and 2; continuous drain current is rated -9 A at TA=25℃ with VGS=10V. |
| 4 | G | input | Gate of the P-channel MOSFET; gate-source voltage is rated ±20 V maximum and the threshold voltage is -1 V to -3 V. |
| 5 | D | passive | Drain of the P-channel MOSFET, tied with pins 6, 7 and 8; drain-source voltage is rated -30 V and pulsed drain current -50 A. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 7 and 8; drain-source voltage is rated -30 V and pulsed drain current -50 A. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 6 and 8; drain-source voltage is rated -30 V and pulsed drain current -50 A. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 6 and 7; drain-source voltage is rated -30 V and pulsed drain current -50 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
CAD (KiCad official)
- Symbol:
SI4825DDY-T1-GE3-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
si4825ddy-t1-ge3-hxy-etched.step/si4825ddy-t1-ge3-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si4825ddy-t1-ge3-hxy.step/si4825ddy-t1-ge3-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
fcb2ee8b72286ac7, retrieved 2026-11-02, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).