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SI4825DDY-T1-GE3-HXY

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HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorsi4825ddy-t1-ge3-hxyfactory-2.0.0extractor-text

Verified SI4825DDY-T1-GE3-HXY

by Ray · last 2 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier lcsc, 8 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: SI4825DDY-T1-GE3-HXY · SOP-8 · 8 pins
  • ✓copper: 8 copper pads, none touching another net
  • ✓datasheet: all 8 pin names found in the 6-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: SOIC-8_3.9x4.9mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-znzmztqy/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 8 pins = 8 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 8 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ si4825ddy-t1-ge3-hxy.kicad_sym✓ si4825ddy-t1-ge3-hxy.kicad_mod✓ si4825ddy-t1-ge3-hxy.step
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Symbol & Footprint

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Datasheet

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Contents

README

markdown

SI4825DDY-T1-GE3-HXY

HXY MOSFET · MOSFETs · SOP-8

SI4825DDY-T1-GE3-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, tied with pins 2 and 3; continuous drain current is rated -9 A at TA=25℃ with VGS=10V.
2 S passive Source of the P-channel MOSFET, tied with pins 1 and 3; continuous drain current is rated -9 A at TA=25℃ with VGS=10V.
3 S passive Source of the P-channel MOSFET, tied with pins 1 and 2; continuous drain current is rated -9 A at TA=25℃ with VGS=10V.
4 G input Gate of the P-channel MOSFET; gate-source voltage is rated ±20 V maximum and the threshold voltage is -1 V to -3 V.
5 D passive Drain of the P-channel MOSFET, tied with pins 6, 7 and 8; drain-source voltage is rated -30 V and pulsed drain current -50 A.
6 D passive Drain of the P-channel MOSFET, tied with pins 5, 7 and 8; drain-source voltage is rated -30 V and pulsed drain current -50 A.
7 D passive Drain of the P-channel MOSFET, tied with pins 5, 6 and 8; drain-source voltage is rated -30 V and pulsed drain current -50 A.
8 D passive Drain of the P-channel MOSFET, tied with pins 5, 6 and 7; drain-source voltage is rated -30 V and pulsed drain current -50 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

CAD (KiCad official)

  • Symbol: SI4825DDY-T1-GE3-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: si4825ddy-t1-ge3-hxy-etched.step / si4825ddy-t1-ge3-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4825ddy-t1-ge3-hxy.step / si4825ddy-t1-ge3-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 fcb2ee8b72286ac7, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF