component
SI4599DY-T1-GE3-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SI4599DY-T1-GE3-VB
VBsemi Elec · MOSFETs · SO-8
SI4599DY-T1-GE3-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (60 V VDS rating). |
| 2 | G1 | input | Gate of the N-channel MOSFET, with a VGS rating of ±20 V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (-60 V VDS rating). |
| 4 | G2 | input | Gate of the P-channel MOSFET, with a VGS rating of ±20 V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET, tied to pin 6 (-60 V VDS rating). |
| 6 | D2 | passive | Drain of the P-channel MOSFET, tied to pin 5 (-60 V VDS rating). |
| 7 | D1 | passive | Drain of the N-channel MOSFET, tied to pin 8 (60 V VDS rating). |
| 8 | D1 | passive | Drain of the N-channel MOSFET, tied to pin 7 (60 V VDS rating). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Channel) | VDS | 60 | V | TA = 25 °C | 1 | ||
| Drain-Source Voltage (P-Channel) | VDS | -60 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage (N and P) | VGS | -20 | 20 | V | TA = 25 °C | 1 | |
| Continuous Drain Current (N-Channel) | ID | 5.3 | A | TJ = 150 °C, TC = 25 °C | 1 | ||
| Continuous Drain Current (P-Channel) | ID | -4.9 | A | TJ = 150 °C, TC = 25 °C | 1 | ||
| Continuous Drain Current (N-Channel) | ID | 4.3 | A | TJ = 150 °C, TC = 70 °C | 1 | ||
| Continuous Drain Current (P-Channel) | ID | -4.2 | A | TJ = 150 °C, TC = 70 °C | 1 | ||
| Pulsed Drain Current (N-Channel) | IDM | 20 | A | 10 µs pulse width | 1 | ||
| Pulsed Drain Current (P-Channel) | IDM | -25 | A | 10 µs pulse width | 1 | ||
| Source Drain Diode Current (N-Channel) | IS | 2.6 | A | TC = 25 °C | 1 | ||
| Source Drain Diode Current (P-Channel) | IS | -2.8 | A | TC = 25 °C | 1 | ||
| Pulsed Source-Drain Current (N-Channel) | ISM | 20 | A | 1 | |||
| Pulsed Source-Drain Current (P-Channel) | ISM | -25 | A | 1 | |||
| Single Pulse Avalanche Current (N-Channel) | IAS | 11 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Current (P-Channel) | IAS | 15 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy (N-Channel) | EAS | 6.1 | mJ | 1 | |||
| Single Pulse Avalanche Energy (P-Channel) | EAS | 11 | mJ | 1 | |||
| Maximum Power Dissipation (N-Channel) | PD | 3.1 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation (P-Channel) | PD | 3.4 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation (N-Channel) | PD | 2 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation (P-Channel) | PD | 2.2 | W | TC = 70 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient (N-Channel) | RthJA | 55 | 62.5 | °C/W | t ≤ 10 s | 1 | |
| Maximum Junction-to-Ambient (P-Channel) | RthJA | 53 | 62.5 | °C/W | t ≤ 10 s | 1 | |
| Maximum Junction-to-Foot (Drain) (N-Channel) | RthJF | 33 | 40 | °C/W | Steady state | 1 | |
| Maximum Junction-to-Foot (Drain) (P-Channel) | RthJF | 30 | 37 | °C/W | Steady state | 1 | |
| Maximum Junction-to-Ambient (N and P-Channel, note d) | RthJA | 110 | °C/W | Steady state (note d) | 1 | ||
| Drain-Source Breakdown Voltage (N-Channel) | V(BR)DSS | 60 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Drain-Source Breakdown Voltage (P-Channel) | V(BR)DSS | -60 | V | VGS = 0 V, ID = -250 µA | 2 | ||
| Gate Threshold Voltage (N-Channel) | VGS(th) | 1 | 3 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate Threshold Voltage (P-Channel) | VGS(th) | -1 | -3 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Body Leakage (N-Channel) | IGSS | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | ||
| Gate-Body Leakage (P-Channel) | IGSS | -100 | nA | VDS = 0 V, VGS = ±20 V | 2 | ||
| Zero Gate Voltage Drain Current (N-Channel) | IDSS | 1 | µA | VDS = 60 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current (P-Channel) | IDSS | -1 | µA | VDS = -60 V, VGS = 0 V | 2 | ||
| On-State Drain Current (N-Channel) | ID(on) | 20 | A | VDS ≥ 5 V, VGS = 10 V | 2 | ||
| On-State Drain Current (P-Channel) | ID(on) | -25 | A | VDS ≤ -5 V, VGS = -10 V | 2 | ||
| Drain-Source On-State Resistance (P-Channel) | RDS(on) | 0.055 | Ω | VGS = -10 V, ID = -3.1 A | 2 | ||
| Drain-Source On-State Resistance (N-Channel) | RDS(on) | 0.029 | Ω | VGS = 4.5 V, ID = 3.9 A | 2 | ||
| Drain-Source On-State Resistance (P-Channel) | RDS(on) | 0.06 | Ω | VGS = -4.5 V, ID = -0.2 A | 2 | ||
| Total Gate Charge (N-Channel) | Qg | 13 | 20 | nC | VDS = 30 V, VGS = 10 V, ID = 4.3 A | 2 | |
| Total Gate Charge (P-Channel) | Qg | 14.5 | 22 | nC | VDS = -30 V, VGS = -10 V, ID = -3.1 A | 2 | |
| Gate Resistance (N-Channel) | Rg | 2 | 3 | Ω | f = 1 MHz | 2 | |
| Gate Resistance (P-Channel) | Rg | 14 | 20 | Ω | f = 1 MHz | 2 | |
| Turn-On Delay Time td(on) (N-Channel) | td(on) | 10 | 15 | ns | VDD = 30 V, RL = 8.8 Ω, ID ≅ 3.4 A, VGEN = 10 V, Rg = 1 Ω | 3 | |
| Turn-On Delay Time td(on) (P-Channel) | td(on) | 10 | 15 | ns | VDD = -30 V, RL = 12.5 Ω, ID ≅ -2.4 A, VGEN = -10 V, Rg = 1 Ω | 3 | |
| Rise Time tr (N-Channel) | tr | 15 | 25 | ns | VDD = 30 V, RL = 8.8 Ω, ID ≅ 3.4 A, VGEN = 10 V, Rg = 1 Ω | 3 | |
| Rise Time tr (P-Channel) | tr | 13 | 20 | ns | VDD = -30 V, RL = 12.5 Ω, ID ≅ -2.4 A, VGEN = -10 V, Rg = 1 Ω | 3 | |
| Turn-Off Delay Time td(off) (N-Channel) | td(off) | 20 | 30 | ns | VDD = 30 V, RL = 8.8 Ω, ID ≅ 3.4 A, VGEN = 10 V, Rg = 1 Ω | 3 | |
| Turn-Off Delay Time td(off) (P-Channel) | td(off) | 35 | 55 | ns | VDD = -30 V, RL = 12.5 Ω, ID ≅ -2.4 A, VGEN = -10 V, Rg = 1 Ω | 3 | |
| Fall Time tf (N-Channel) | tf | 10 | 15 | ns | VDD = 30 V, RL = 8.8 Ω, ID ≅ 3.4 A, VGEN = 10 V, Rg = 1 Ω | 3 | |
| Fall Time tf (P-Channel) | tf | 30 | 45 | ns | VDD = -30 V, RL = 12.5 Ω, ID ≅ -2.4 A, VGEN = -10 V, Rg = 1 Ω | 3 | |
| Body Diode Voltage (N-Channel) | VSD | 0.8 | 1.2 | V | IS = 1.7 A | 3 | |
| Body Diode Voltage (P-Channel) | VSD | -0.8 | -1.2 | V | IS = -2 A | 3 | |
| Body Diode Reverse Recovery Time (N-Channel) | trr | 30 | 60 | ns | IF = 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C | 3 | |
| Body Diode Reverse Recovery Time (P-Channel) | trr | 30 | 50 | ns | IF = -2 A, dI/dt = -100 A/µs, TJ = 25 °C | 3 | |
| Body Diode Reverse Recovery Charge (N-Channel) | Qrr | 32 | 50 | nC | 3 | ||
| Body Diode Reverse Recovery Charge (P-Channel) | Qrr | 35 | 60 | nC | 3 |
CAD (KiCad official)
- Symbol:
SI4599DY-T1-GE3-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
si4599dy-t1-ge3-vb-etched.step/si4599dy-t1-ge3-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si4599dy-t1-ge3-vb.step/si4599dy-t1-ge3-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (14 pp, sha256
ecbd6f8665e68e77, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SI4599DY-T1-GE3-VB
**VBsemi Elec** · MOSFETs · SO-8
SI4599DY-T1-GE3-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (60 V VDS rating). |
| 2 | G1 | input | Gate of the N-channel MOSFET, with a VGS rating of ±20 V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (-60 V VDS rating). |
| 4 | G2 | input | Gate of the P-channel MOSFET, with a VGS rating of ±20 V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET, tied to pin 6 (-60 V VDS rating). |
| 6 | D2 | passive | Drain of the P-channel MOSFET, tied to pin 5 (-60 V VDS rating). |
| 7 | D1 | passive | Drain of the N-channel MOSFET, tied to pin 8 (60 V VDS rating). |
| 8 | D1 | passive | Drain of the N-channel MOSFET, tied to pin 7 (60 V VDS rating). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Channel) | VDS | | | 60 | V | TA = 25 °C | 1 |
| Drain-Source Voltage (P-Channel) | VDS | | | -60 | V | TA = 25 °C | 1 |
| Gate-Source Voltage (N and P) | VGS | -20 | | 20 | V | TA = 25 °C | 1 |
| Continuous Drain Current (N-Channel) | ID | | | 5.3 | A | TJ = 150 °C, TC = 25 °C | 1 |
| Continuous Drain Current (P-Channel) | ID | | | -4.9 | A | TJ = 150 °C, TC = 25 °C | 1 |
| Continuous Drain Current (N-Channel) | ID | | | 4.3 | A | TJ = 150 °C, TC = 70 °C | 1 |
| Continuous Drain Current (P-Channel) | ID | | | -4.2 | A | TJ = 150 °C, TC = 70 °C | 1 |
| Pulsed Drain Current (N-Channel) | IDM | | | 20 | A | 10 µs pulse width | 1 |
| Pulsed Drain Current (P-Channel) | IDM | | | -25 | A | 10 µs pulse width | 1 |
| Source Drain Diode Current (N-Channel) | IS | | | 2.6 | A | TC = 25 °C | 1 |
| Source Drain Diode Current (P-Channel) | IS | | | -2.8 | A | TC = 25 °C | 1 |
| Pulsed Source-Drain Current (N-Channel) | ISM | | | 20 | A | | 1 |
| Pulsed Source-Drain Current (P-Channel) | ISM | | | -25 | A | | 1 |
| Single Pulse Avalanche Current (N-Channel) | IAS | | | 11 | A | L = 0.1 mH | 1 |
| Single Pulse Avalanche Current (P-Channel) | IAS | | | 15 | A | L = 0.1 mH | 1 |
| Single Pulse Avalanche Energy (N-Channel) | EAS | | | 6.1 | mJ | | 1 |
| Single Pulse Avalanche Energy (P-Channel) | EAS | | | 11 | mJ | | 1 |
| Maximum Power Dissipation (N-Channel) | PD | | | 3.1 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation (P-Channel) | PD | | | 3.4 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation (N-Channel) | PD | | | 2 | W | TC = 70 °C | 1 |
| Maximum Power Dissipation (P-Channel) | PD | | | 2.2 | W | TC = 70 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient (N-Channel) | RthJA | | 55 | 62.5 | °C/W | t ≤ 10 s | 1 |
| Maximum Junction-to-Ambient (P-Channel) | RthJA | | 53 | 62.5 | °C/W | t ≤ 10 s | 1 |
| Maximum Junction-to-Foot (Drain) (N-Channel) | RthJF | | 33 | 40 | °C/W | Steady state | 1 |
| Maximum Junction-to-Foot (Drain) (P-Channel) | RthJF | | 30 | 37 | °C/W | Steady state | 1 |
| Maximum Junction-to-Ambient (N and P-Channel, note d) | RthJA | | | 110 | °C/W | Steady state (note d) | 1 |
| Drain-Source Breakdown Voltage (N-Channel) | V(BR)DSS | 60 | | | V | VGS = 0 V, ID = 250 µA | 2 |
| Drain-Source Breakdown Voltage (P-Channel) | V(BR)DSS | -60 | | | V | VGS = 0 V, ID = -250 µA | 2 |
| Gate Threshold Voltage (N-Channel) | VGS(th) | 1 | | 3 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate Threshold Voltage (P-Channel) | VGS(th) | -1 | | -3 | V | VDS = VGS, ID = -250 µA | 2 |
| Gate-Body Leakage (N-Channel) | IGSS | | | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 |
| Gate-Body Leakage (P-Channel) | IGSS | | | -100 | nA | VDS = 0 V, VGS = ±20 V | 2 |
| Zero Gate Voltage Drain Current (N-Channel) | IDSS | | | 1 | µA | VDS = 60 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current (P-Channel) | IDSS | | | -1 | µA | VDS = -60 V, VGS = 0 V | 2 |
| On-State Drain Current (N-Channel) | ID(on) | 20 | | | A | VDS ≥ 5 V, VGS = 10 V | 2 |
| On-State Drain Current (P-Channel) | ID(on) | -25 | | | A | VDS ≤ -5 V, VGS = -10 V | 2 |
| Drain-Source On-State Resistance (P-Channel) | RDS(on) | | | 0.055 | Ω | VGS = -10 V, ID = -3.1 A | 2 |
| Drain-Source On-State Resistance (N-Channel) | RDS(on) | | | 0.029 | Ω | VGS = 4.5 V, ID = 3.9 A | 2 |
| Drain-Source On-State Resistance (P-Channel) | RDS(on) | | | 0.06 | Ω | VGS = -4.5 V, ID = -0.2 A | 2 |
| Total Gate Charge (N-Channel) | Qg | | 13 | 20 | nC | VDS = 30 V, VGS = 10 V, ID = 4.3 A | 2 |
| Total Gate Charge (P-Channel) | Qg | | 14.5 | 22 | nC | VDS = -30 V, VGS = -10 V, ID = -3.1 A | 2 |
| Gate Resistance (N-Channel) | Rg | | 2 | 3 | Ω | f = 1 MHz | 2 |
| Gate Resistance (P-Channel) | Rg | | 14 | 20 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time td(on) (N-Channel) | td(on) | | 10 | 15 | ns | VDD = 30 V, RL = 8.8 Ω, ID ≅ 3.4 A, VGEN = 10 V, Rg = 1 Ω | 3 |
| Turn-On Delay Time td(on) (P-Channel) | td(on) | | 10 | 15 | ns | VDD = -30 V, RL = 12.5 Ω, ID ≅ -2.4 A, VGEN = -10 V, Rg = 1 Ω | 3 |
| Rise Time tr (N-Channel) | tr | | 15 | 25 | ns | VDD = 30 V, RL = 8.8 Ω, ID ≅ 3.4 A, VGEN = 10 V, Rg = 1 Ω | 3 |
| Rise Time tr (P-Channel) | tr | | 13 | 20 | ns | VDD = -30 V, RL = 12.5 Ω, ID ≅ -2.4 A, VGEN = -10 V, Rg = 1 Ω | 3 |
| Turn-Off Delay Time td(off) (N-Channel) | td(off) | | 20 | 30 | ns | VDD = 30 V, RL = 8.8 Ω, ID ≅ 3.4 A, VGEN = 10 V, Rg = 1 Ω | 3 |
| Turn-Off Delay Time td(off) (P-Channel) | td(off) | | 35 | 55 | ns | VDD = -30 V, RL = 12.5 Ω, ID ≅ -2.4 A, VGEN = -10 V, Rg = 1 Ω | 3 |
| Fall Time tf (N-Channel) | tf | | 10 | 15 | ns | VDD = 30 V, RL = 8.8 Ω, ID ≅ 3.4 A, VGEN = 10 V, Rg = 1 Ω | 3 |
| Fall Time tf (P-Channel) | tf | | 30 | 45 | ns | VDD = -30 V, RL = 12.5 Ω, ID ≅ -2.4 A, VGEN = -10 V, Rg = 1 Ω | 3 |
| Body Diode Voltage (N-Channel) | VSD | | 0.8 | 1.2 | V | IS = 1.7 A | 3 |
| Body Diode Voltage (P-Channel) | VSD | | -0.8 | -1.2 | V | IS = -2 A | 3 |
| Body Diode Reverse Recovery Time (N-Channel) | trr | | 30 | 60 | ns | IF = 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C | 3 |
| Body Diode Reverse Recovery Time (P-Channel) | trr | | 30 | 50 | ns | IF = -2 A, dI/dt = -100 A/µs, TJ = 25 °C | 3 |
| Body Diode Reverse Recovery Charge (N-Channel) | Qrr | | 32 | 50 | nC | | 3 |
| Body Diode Reverse Recovery Charge (P-Channel) | Qrr | | 35 | 60 | nC | | 3 |
## CAD (KiCad official)
- Symbol: `SI4599DY-T1-GE3-VB`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `si4599dy-t1-ge3-vb-etched.step` / `si4599dy-t1-ge3-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si4599dy-t1-ge3-vb.step` / `si4599dy-t1-ge3-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603178459653435392) (14 pp, sha256 `ecbd6f8665e68e77`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/si4599dy-t1-ge3-vb-datasheet.pdf)