component

SI4599DY-T1-GE3-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorssi4599dy-t1-ge3-vbfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 4h ago
viewers si4599dy-t1-ge3-vb: viewers · Ray 4h ago
package.json Publish 0.1.0 · Ray 4h ago
page.json Set visibility: public · Ray 4h ago
README.md Publish 0.1.0 · Ray 4h ago
si4599dy-t1-ge3-vb-etched.glb Publish 0.1.0 · Ray 4h ago
si4599dy-t1-ge3-vb-etched.step si4599dy-t1-ge3-vb: factory component page (tier=lcsc) · Ray 4h ago
si4599dy-t1-ge3-vb-hero.glb si4599dy-t1-ge3-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 4h ago
si4599dy-t1-ge3-vb-hero.overlay.json Publish 0.1.0 · Ray 4h ago
si4599dy-t1-ge3-vb.glb Publish 0.1.0 · Ray 4h ago
si4599dy-t1-ge3-vb.kicad_mod Publish 0.1.0 · Ray 4h ago
si4599dy-t1-ge3-vb.kicad_sym Publish 0.1.0 · Ray 4h ago
si4599dy-t1-ge3-vb.lbr Publish 0.1.0 · Ray 4h ago
si4599dy-t1-ge3-vb.step Publish 0.1.0 · Ray 4h ago

SI4599DY-T1-GE3-VB

VBsemi Elec · MOSFETs · SO-8

SI4599DY-T1-GE3-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (60 V VDS rating).
2 G1 input Gate of the N-channel MOSFET, with a VGS rating of ±20 V.
3 S2 passive Source of the P-channel MOSFET (-60 V VDS rating).
4 G2 input Gate of the P-channel MOSFET, with a VGS rating of ±20 V.
5 D2 passive Drain of the P-channel MOSFET, tied to pin 6 (-60 V VDS rating).
6 D2 passive Drain of the P-channel MOSFET, tied to pin 5 (-60 V VDS rating).
7 D1 passive Drain of the N-channel MOSFET, tied to pin 8 (60 V VDS rating).
8 D1 passive Drain of the N-channel MOSFET, tied to pin 7 (60 V VDS rating).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-Channel) VDS 60 V TA = 25 °C 1
Drain-Source Voltage (P-Channel) VDS -60 V TA = 25 °C 1
Gate-Source Voltage (N and P) VGS -20 20 V TA = 25 °C 1
Continuous Drain Current (N-Channel) ID 5.3 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current (P-Channel) ID -4.9 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current (N-Channel) ID 4.3 A TJ = 150 °C, TC = 70 °C 1
Continuous Drain Current (P-Channel) ID -4.2 A TJ = 150 °C, TC = 70 °C 1
Pulsed Drain Current (N-Channel) IDM 20 A 10 µs pulse width 1
Pulsed Drain Current (P-Channel) IDM -25 A 10 µs pulse width 1
Source Drain Diode Current (N-Channel) IS 2.6 A TC = 25 °C 1
Source Drain Diode Current (P-Channel) IS -2.8 A TC = 25 °C 1
Pulsed Source-Drain Current (N-Channel) ISM 20 A 1
Pulsed Source-Drain Current (P-Channel) ISM -25 A 1
Single Pulse Avalanche Current (N-Channel) IAS 11 A L = 0.1 mH 1
Single Pulse Avalanche Current (P-Channel) IAS 15 A L = 0.1 mH 1
Single Pulse Avalanche Energy (N-Channel) EAS 6.1 mJ 1
Single Pulse Avalanche Energy (P-Channel) EAS 11 mJ 1
Maximum Power Dissipation (N-Channel) PD 3.1 W TC = 25 °C 1
Maximum Power Dissipation (P-Channel) PD 3.4 W TC = 25 °C 1
Maximum Power Dissipation (N-Channel) PD 2 W TC = 70 °C 1
Maximum Power Dissipation (P-Channel) PD 2.2 W TC = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient (N-Channel) RthJA 55 62.5 °C/W t ≤ 10 s 1
Maximum Junction-to-Ambient (P-Channel) RthJA 53 62.5 °C/W t ≤ 10 s 1
Maximum Junction-to-Foot (Drain) (N-Channel) RthJF 33 40 °C/W Steady state 1
Maximum Junction-to-Foot (Drain) (P-Channel) RthJF 30 37 °C/W Steady state 1
Maximum Junction-to-Ambient (N and P-Channel, note d) RthJA 110 °C/W Steady state (note d) 1
Drain-Source Breakdown Voltage (N-Channel) V(BR)DSS 60 V VGS = 0 V, ID = 250 µA 2
Drain-Source Breakdown Voltage (P-Channel) V(BR)DSS -60 V VGS = 0 V, ID = -250 µA 2
Gate Threshold Voltage (N-Channel) VGS(th) 1 3 V VDS = VGS, ID = 250 µA 2
Gate Threshold Voltage (P-Channel) VGS(th) -1 -3 V VDS = VGS, ID = -250 µA 2
Gate-Body Leakage (N-Channel) IGSS 100 nA VDS = 0 V, VGS = ±20 V 2
Gate-Body Leakage (P-Channel) IGSS -100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current (N-Channel) IDSS 1 µA VDS = 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (P-Channel) IDSS -1 µA VDS = -60 V, VGS = 0 V 2
On-State Drain Current (N-Channel) ID(on) 20 A VDS ≥ 5 V, VGS = 10 V 2
On-State Drain Current (P-Channel) ID(on) -25 A VDS ≤ -5 V, VGS = -10 V 2
Drain-Source On-State Resistance (P-Channel) RDS(on) 0.055 Ω VGS = -10 V, ID = -3.1 A 2
Drain-Source On-State Resistance (N-Channel) RDS(on) 0.029 Ω VGS = 4.5 V, ID = 3.9 A 2
Drain-Source On-State Resistance (P-Channel) RDS(on) 0.06 Ω VGS = -4.5 V, ID = -0.2 A 2
Total Gate Charge (N-Channel) Qg 13 20 nC VDS = 30 V, VGS = 10 V, ID = 4.3 A 2
Total Gate Charge (P-Channel) Qg 14.5 22 nC VDS = -30 V, VGS = -10 V, ID = -3.1 A 2
Gate Resistance (N-Channel) Rg 2 3 Ω f = 1 MHz 2
Gate Resistance (P-Channel) Rg 14 20 Ω f = 1 MHz 2
Turn-On Delay Time td(on) (N-Channel) td(on) 10 15 ns VDD = 30 V, RL = 8.8 Ω, ID ≅ 3.4 A, VGEN = 10 V, Rg = 1 Ω 3
Turn-On Delay Time td(on) (P-Channel) td(on) 10 15 ns VDD = -30 V, RL = 12.5 Ω, ID ≅ -2.4 A, VGEN = -10 V, Rg = 1 Ω 3
Rise Time tr (N-Channel) tr 15 25 ns VDD = 30 V, RL = 8.8 Ω, ID ≅ 3.4 A, VGEN = 10 V, Rg = 1 Ω 3
Rise Time tr (P-Channel) tr 13 20 ns VDD = -30 V, RL = 12.5 Ω, ID ≅ -2.4 A, VGEN = -10 V, Rg = 1 Ω 3
Turn-Off Delay Time td(off) (N-Channel) td(off) 20 30 ns VDD = 30 V, RL = 8.8 Ω, ID ≅ 3.4 A, VGEN = 10 V, Rg = 1 Ω 3
Turn-Off Delay Time td(off) (P-Channel) td(off) 35 55 ns VDD = -30 V, RL = 12.5 Ω, ID ≅ -2.4 A, VGEN = -10 V, Rg = 1 Ω 3
Fall Time tf (N-Channel) tf 10 15 ns VDD = 30 V, RL = 8.8 Ω, ID ≅ 3.4 A, VGEN = 10 V, Rg = 1 Ω 3
Fall Time tf (P-Channel) tf 30 45 ns VDD = -30 V, RL = 12.5 Ω, ID ≅ -2.4 A, VGEN = -10 V, Rg = 1 Ω 3
Body Diode Voltage (N-Channel) VSD 0.8 1.2 V IS = 1.7 A 3
Body Diode Voltage (P-Channel) VSD -0.8 -1.2 V IS = -2 A 3
Body Diode Reverse Recovery Time (N-Channel) trr 30 60 ns IF = 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C 3
Body Diode Reverse Recovery Time (P-Channel) trr 30 50 ns IF = -2 A, dI/dt = -100 A/µs, TJ = 25 °C 3
Body Diode Reverse Recovery Charge (N-Channel) Qrr 32 50 nC 3
Body Diode Reverse Recovery Charge (P-Channel) Qrr 35 60 nC 3

CAD (KiCad official)

  • Symbol: SI4599DY-T1-GE3-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: si4599dy-t1-ge3-vb-etched.step / si4599dy-t1-ge3-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4599dy-t1-ge3-vb.step / si4599dy-t1-ge3-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (14 pp, sha256 ecbd6f8665e68e77, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF