# SI4559ADY-HXY

**HXY MOSFET** · MOSFETs · SOP-8

SI4559ADY-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1, the N-channel device (VDS 60V, ID 6A, RDS(ON) <48mΩ at VGS=10V). |
| 2 | G1 | input | Gate of MOSFET 1, the N-channel device (VGS ±20V max, threshold 1.0 to 2.5V). |
| 3 | S2 | passive | Source of MOSFET 2, the P-channel device (VDS -60V, ID -5A, RDS(ON) <85mΩ at VGS=-10V). |
| 4 | G2 | input | Gate of MOSFET 2, the P-channel device (VGS ±20V max). |
| 5 | D2 | passive | Drain of MOSFET 2, the P-channel device, tied internally to pin 6 (VDS -60V max). |
| 6 | D2 | passive | Drain of MOSFET 2, the P-channel device, tied internally to pin 5 (VDS -60V max). |
| 7 | D1 | passive | Drain of MOSFET 1, the N-channel device, tied internally to pin 8 (VDS 60V max). |
| 8 | D1 | passive | Drain of MOSFET 1, the N-channel device, tied internally to pin 7 (VDS 60V max). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-ch Drain-Source Voltage | VDS |  |  | 60 | V | N-Channel, TC=25℃ | 1 |
| P-ch Drain-Source Voltage | VDS |  |  | -60 | V | P-Channel, TC=25℃ | 1 |
| N-ch Gate-Source Voltage | VGS | -20 |  | 20 | V | N-Channel | 1 |
| P-ch Gate-Source Voltage | VGS | -20 |  | 20 | V | P-Channel | 1 |
| N-ch Continuous Drain Current | ID@TA=25℃ |  |  | 6 | A | VGS @ 10V | 1 |
| P-ch Continuous Drain Current | ID@TA=25℃ |  |  | -5 | A | VGS @ 10V | 1 |
| N-ch Continuous Drain Current | ID@TA=70℃ |  |  | 4 | A | VGS @ 10V | 1 |
| P-ch Continuous Drain Current | ID@TA=70℃ |  |  | -3.5 | A | VGS @ 10V | 1 |
| N-ch Pulsed Drain Current | IDM |  |  | 11 | A |  | 1 |
| P-ch Pulsed Drain Current | IDM |  |  | -8.5 | A |  | 1 |
| N-ch Single Pulse Avalanche Energy | EAS |  |  | 22.5 | mJ |  | 1 |
| P-ch Single Pulse Avalanche Energy | EAS |  |  | 35.3 | mJ |  | 1 |
| N-ch Avalanche Current | IAS |  |  | 22.6 | A |  | 1 |
| P-ch Avalanche Current | IAS |  |  | -26.6 | A |  | 1 |
| Total Power Dissipation | PD@TA=25℃ |  |  | 2.5 | W | N and P channel | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 85 | ℃/W |  | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 62.5 | ℃/W |  | 1 |
| N-ch Drain-Source Breakdown Voltage | V(BR)DSS | 60 |  |  | V | VGS=0V, ID=250μA | 2 |
| N-ch Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=60V, VGS=0V | 2 |
| N-ch Gate to Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 2 |
| N-ch Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| N-ch Static Drain-Source On-Resistance | RDS(on) |  | 40 | 48 | mΩ | VGS=10V, ID=5A | 2 |
| N-ch Static Drain-Source On-Resistance | RDS(on) |  | 48 | 60 | mΩ | VGS=4.5V, ID=3A | 2 |
| N-ch Max Continuous Diode Forward Current | IS |  |  | 6 | A |  | 2 |
| N-ch Max Pulsed Diode Forward Current | ISM |  |  | 20 | A |  | 2 |
| N-ch Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=5A | 2 |
| P-ch Drain-Source Breakdown Voltage | BVDSS | -60 |  |  | V | VGS=0V , ID=-250uA | 3 |
| P-ch Static Drain-Source On-Resistance | RDS(ON) |  | 70 | 100 | mΩ | VGS=-10V , ID=-3.5A | 3 |
| P-ch Static Drain-Source On-Resistance | RDS(ON) |  | 100 | 115 | mΩ | VGS=-4.5V , ID=-3.1A | 3 |
| P-ch Gate Threshold Voltage | VGS(th) | -1 |  | -2.5 | V | VGS=VDS , ID =-250uA | 3 |
| P-ch Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=-48V , VGS=0V , TJ=25℃ | 3 |
| P-ch Drain-Source Leakage Current | IDSS |  |  | 5 | uA | VDS=-48V , VGS=0V , TJ=55℃ | 3 |
| P-ch Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V , VDS=0V | 3 |
| P-ch Continuous Source Current | IS |  |  | -6 | A | VG=VD=0V , Force Current | 3 |
| P-ch Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 3 |
| P-ch Forward Transconductance | gfs |  | 8.5 |  | S | VDS=-5V , ID=-3A | 3 |
| N-ch Input Capacitance | Ciss |  | 1148 |  | pF | VDS=25V, VGS=0V, f=1.0MHz | 2 |
| N-ch Output Capacitance | Coss |  | 58.5 |  | pF | VDS=25V, VGS=0V, f=1.0MHz | 2 |
| N-ch Reverse Transfer Capacitance | Crss |  | 49.4 |  | pF | VDS=25V, VGS=0V, f=1.0MHz | 2 |
| N-ch Total Gate Charge | Qg |  | 20.3 |  | nC | VDS=30V, ID=2.5A, VGS=10V | 2 |
| P-ch Input Capacitance | Ciss |  | 1137 |  | pF | VDS=-15V , VGS=0V , f=1MHz | 3 |
| P-ch Output Capacitance | Coss |  | 76 |  | pF | VDS=-15V , VGS=0V , f=1MHz | 3 |
| P-ch Reverse Transfer Capacitance | Crss |  | 50 |  | pF | VDS=-15V , VGS=0V , f=1MHz | 3 |

## CAD (KiCad official)

- Symbol: `SI4559ADY-HXY`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `si4559ady-hxy-etched.step` / `si4559ady-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si4559ady-hxy.step` / `si4559ady-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/si4559ady-hxy-datasheet.pdf) (9 pp, sha256 `f13e412994a9d6bd`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/si4559ady-hxy-datasheet.pdf)