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SI4559ADY-HXY

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HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI4559ADY-HXY

HXY MOSFET · MOSFETs · SOP-8

SI4559ADY-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1, the N-channel device (VDS 60V, ID 6A, RDS(ON) <48mΩ at VGS=10V).
2 G1 input Gate of MOSFET 1, the N-channel device (VGS ±20V max, threshold 1.0 to 2.5V).
3 S2 passive Source of MOSFET 2, the P-channel device (VDS -60V, ID -5A, RDS(ON) <85mΩ at VGS=-10V).
4 G2 input Gate of MOSFET 2, the P-channel device (VGS ±20V max).
5 D2 passive Drain of MOSFET 2, the P-channel device, tied internally to pin 6 (VDS -60V max).
6 D2 passive Drain of MOSFET 2, the P-channel device, tied internally to pin 5 (VDS -60V max).
7 D1 passive Drain of MOSFET 1, the N-channel device, tied internally to pin 8 (VDS 60V max).
8 D1 passive Drain of MOSFET 1, the N-channel device, tied internally to pin 7 (VDS 60V max).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
N-ch Drain-Source Voltage VDS 60 V N-Channel, TC=25℃ 1
P-ch Drain-Source Voltage VDS -60 V P-Channel, TC=25℃ 1
N-ch Gate-Source Voltage VGS -20 20 V N-Channel 1
P-ch Gate-Source Voltage VGS -20 20 V P-Channel 1
N-ch Continuous Drain Current ID@TA=25℃ 6 A VGS @ 10V 1
P-ch Continuous Drain Current ID@TA=25℃ -5 A VGS @ 10V 1
N-ch Continuous Drain Current ID@TA=70℃ 4 A VGS @ 10V 1
P-ch Continuous Drain Current ID@TA=70℃ -3.5 A VGS @ 10V 1
N-ch Pulsed Drain Current IDM 11 A 1
P-ch Pulsed Drain Current IDM -8.5 A 1
N-ch Single Pulse Avalanche Energy EAS 22.5 mJ 1
P-ch Single Pulse Avalanche Energy EAS 35.3 mJ 1
N-ch Avalanche Current IAS 22.6 A 1
P-ch Avalanche Current IAS -26.6 A 1
Total Power Dissipation PD@TA=25℃ 2.5 W N and P channel 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 85 ℃/W 1
Thermal Resistance Junction-Case RθJC 62.5 ℃/W 1
N-ch Drain-Source Breakdown Voltage V(BR)DSS 60 V VGS=0V, ID=250μA 2
N-ch Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V, VGS=0V 2
N-ch Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
N-ch Gate Threshold Voltage VGS(th) 1 1.6 2.5 V VDS=VGS, ID=250μA 2
N-ch Static Drain-Source On-Resistance RDS(on) 40 48 mΩ VGS=10V, ID=5A 2
N-ch Static Drain-Source On-Resistance RDS(on) 48 60 mΩ VGS=4.5V, ID=3A 2
N-ch Max Continuous Diode Forward Current IS 6 A 2
N-ch Max Pulsed Diode Forward Current ISM 20 A 2
N-ch Diode Forward Voltage VSD 1.2 V VGS=0V, IS=5A 2
P-ch Drain-Source Breakdown Voltage BVDSS -60 V VGS=0V , ID=-250uA 3
P-ch Static Drain-Source On-Resistance RDS(ON) 70 100 mΩ VGS=-10V , ID=-3.5A 3
P-ch Static Drain-Source On-Resistance RDS(ON) 100 115 mΩ VGS=-4.5V , ID=-3.1A 3
P-ch Gate Threshold Voltage VGS(th) -1 -2.5 V VGS=VDS , ID =-250uA 3
P-ch Drain-Source Leakage Current IDSS 1 uA VDS=-48V , VGS=0V , TJ=25℃ 3
P-ch Drain-Source Leakage Current IDSS 5 uA VDS=-48V , VGS=0V , TJ=55℃ 3
P-ch Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 3
P-ch Continuous Source Current IS -6 A VG=VD=0V , Force Current 3
P-ch Diode Forward Voltage VSD -1.2 V VGS=0V , IS=-1A , TJ=25℃ 3
P-ch Forward Transconductance gfs 8.5 S VDS=-5V , ID=-3A 3
N-ch Input Capacitance Ciss 1148 pF VDS=25V, VGS=0V, f=1.0MHz 2
N-ch Output Capacitance Coss 58.5 pF VDS=25V, VGS=0V, f=1.0MHz 2
N-ch Reverse Transfer Capacitance Crss 49.4 pF VDS=25V, VGS=0V, f=1.0MHz 2
N-ch Total Gate Charge Qg 20.3 nC VDS=30V, ID=2.5A, VGS=10V 2
P-ch Input Capacitance Ciss 1137 pF VDS=-15V , VGS=0V , f=1MHz 3
P-ch Output Capacitance Coss 76 pF VDS=-15V , VGS=0V , f=1MHz 3
P-ch Reverse Transfer Capacitance Crss 50 pF VDS=-15V , VGS=0V , f=1MHz 3

CAD (KiCad official)

  • Symbol: SI4559ADY-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: si4559ady-hxy-etched.step / si4559ady-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4559ady-hxy.step / si4559ady-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (9 pp, sha256 f13e412994a9d6bd, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF