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SI4554DY-T1-GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI4554DY-T1-GE3
Vishay Intertech · MOSFETs · SO-8
SI4554DY-T1-GE3 from Vishay Intertech, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of the first MOSFET in this dual N- and P-channel 40 V device; the datasheet gives VGS of ±20 V absolute maximum for both channels. |
| 2 | G1 | input | Gate terminal of the first MOSFET; the datasheet gives VGS of ±20 V absolute maximum for both channels. |
| 3 | S2 | passive | Source terminal of the second MOSFET in this dual N- and P-channel 40 V device; the datasheet gives VGS of ±20 V absolute maximum for both channels. |
| 4 | G2 | input | Gate terminal of the second MOSFET; the datasheet gives VGS of ±20 V absolute maximum for both channels. |
| 5 | D2 | passive | Drain terminal of the second MOSFET; the datasheet gives VDS of 40 V (N-channel) and -40 V (P-channel) and continuous drain current ratings per channel. |
| 6 | D2 | passive | Drain terminal of the second MOSFET (second drain pin, tied to D2); the datasheet gives VDS of 40 V (N-channel) and -40 V (P-channel). |
| 7 | D1 | passive | Drain terminal of the first MOSFET; the datasheet gives VDS of 40 V (N-channel) and -40 V (P-channel) and continuous drain current ratings per channel. |
| 8 | D1 | passive | Drain terminal of the first MOSFET (second drain pin, tied to D1); the datasheet gives VDS of 40 V (N-channel) and -40 V (P-channel). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage (N-channel) | VDS | 40 | V | 1 | |||
| Drain-source voltage (P-channel) | VDS | -40 | V | 1 | |||
| Gate-source voltage (N-channel) | VGS | -20 | 20 | V | 1 | ||
| Gate-source voltage (P-channel) | VGS | -20 | 20 | V | 1 | ||
| Continuous drain current (N-channel) | ID | 8 | A | TC = 25 °C, TJ = 150 °C | 1 | ||
| Continuous drain current (P-channel) | ID | -8 | A | TC = 25 °C, TJ = 150 °C | 1 | ||
| Continuous drain current (N-channel) | ID | 6.8 | A | TC = 70 °C | 1 | ||
| Continuous drain current (P-channel) | ID | -6.8 | A | TC = 70 °C | 1 | ||
| Continuous drain current (P-channel) | ID | -6.6 | A | TA = 25 °C | 1 | ||
| Continuous drain current (N-channel) | ID | 5.4 | A | TA = 70 °C | 1 | ||
| Continuous drain current (P-channel) | ID | -5.3 | A | TA = 70 °C | 1 | ||
| Pulsed drain current (N-channel) | IDM | 40 | A | 10 µs pulse width | 1 | ||
| Pulsed drain current (P-channel) | IDM | -40 | A | 10 µs pulse width | 1 | ||
| Source-drain current diode current (N-channel) | IS | 2.6 | A | TC = 25 °C | 1 | ||
| Source-drain current diode current (P-channel) | IS | -2.6 | A | TC = 25 °C | 1 | ||
| Source-drain current diode current (N-channel) | IS | 1.6 | A | TA = 25 °C | 1 | ||
| Source-drain current diode current (P-channel) | IS | -1.6 | A | TA = 25 °C | 1 | ||
| Single pulse avalanche current (N-channel) | IAS | 10 | A | L = 0.1 mH | 1 | ||
| Single pulse avalanche current (P-channel) | IAS | 20 | A | L = 0.1 mH | 1 | ||
| Single pulse avalanche energy (N-channel) | EAS | 5 | mJ | L = 0.1 mH | 1 | ||
| Single pulse avalanche energy (P-channel) | EAS | 20 | mJ | L = 0.1 mH | 1 | ||
| Maximum power dissipation (N-channel) | PD | 3.1 | W | TC = 25 °C | 1 | ||
| Maximum power dissipation (P-channel) | PD | 3.2 | W | TC = 25 °C | 1 | ||
| Maximum power dissipation (N-channel) | PD | 2 | W | TC = 70 °C | 1 | ||
| Maximum power dissipation (P-channel) | PD | 2.1 | W | TC = 70 °C | 1 | ||
| Maximum power dissipation (P-channel) | PD | 2 | W | TA = 25 °C | 1 | ||
| Maximum power dissipation (N-channel) | PD | 1.28 | W | TA = 70 °C | 1 | ||
| Maximum power dissipation (P-channel) | PD | 1.28 | W | TA = 70 °C | 1 | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum junction-to-ambient (N-channel) | RthJA | 50 | 62.5 | °C/W | t ≤ 10 s | 1 | |
| Maximum junction-to-ambient (P-channel) | RthJA | 47 | 62.5 | °C/W | t ≤ 10 s | 1 | |
| Maximum junction-to-foot (drain) (N-channel) | RthJF | 30 | 40 | °C/W | Steady state | 1 | |
| Maximum junction-to-foot (drain) (P-channel) | RthJF | 29 | 38 | °C/W | Steady state | 1 | |
| Drain-source breakdown voltage (N-channel) | VDS | 40 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Drain-source breakdown voltage (P-channel) | VDS | -40 | V | VGS = 0 V, ID = -250 µA | 2 | ||
| Gate threshold voltage (N-channel) | VGS(th) | 1 | 2.2 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate threshold voltage (P-channel) | VGS(th) | -1.2 | -2.5 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-body leakage (N-channel) | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | |
| Gate-body leakage (P-channel) | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | |
| Zero gate voltage drain current (N-channel) | IDSS | 1 | µA | VDS = 40 V, VGS = 0 V | 2 | ||
| Zero gate voltage drain current (P-channel) | IDSS | -1 | µA | VDS = -40 V, VGS = 0 V | 2 | ||
| On-state drain current (N-channel) | ID(on) | 20 | A | VDS = 5 V, VGS = 10 V | 2 | ||
| On-state drain current (P-channel) | ID(on) | -20 | A | VDS = -5 V, VGS = -10 V | 2 | ||
| Drain-source on-state resistance (N-channel) | RDS(on) | 0.02 | 0.024 | Ω | VGS = 10 V, ID = 6.8 A | 2 | |
| Drain-source on-state resistance (P-channel) | RDS(on) | 0.021 | 0.027 | Ω | VGS = -10 V, ID = -8 A | 2 | |
| Drain-source on-state resistance (N-channel) | RDS(on) | 0.021 | 0.026 | Ω | VGS = 8 V, ID = 6.7 A | 2 | |
| Drain-source on-state resistance (P-channel) | RDS(on) | 0.022 | 0.028 | Ω | VGS = -8 V, ID = -6.5 A | 2 | |
| Drain-source on-state resistance (N-channel) | RDS(on) | 0.022 | 0.027 | Ω | VGS = 4.5 V, ID = 6.6 A | 2 | |
| Drain-source on-state resistance (P-channel) | RDS(on) | 0.027 | 0.034 | Ω | VGS = -4.5 V, ID = -5 A | 2 | |
| Total gate charge (N-channel) | Qg | 13.3 | 20 | nC | VDS = 20 V, VGS = 10 V, ID = 10 A | 2 | |
| Total gate charge (P-channel) | Qg | 41.5 | 63 | nC | VDS = -20 V, VGS = -10 V, ID = -10 A | 2 | |
| Total gate charge at 4.5 V (N-channel) | Qg | 6.5 | 10 | nC | VDS = 20 V, VGS = 4.5 V, ID = 10 A | 2 | |
| Total gate charge at 4.5 V (P-channel) | Qg | 21.7 | 33 | nC | VDS = -20 V, VGS = -4.5 V, ID = -10 A | 2 | |
| Gate resistance (N-channel) | Rg | 0.3 | 1.3 | 2.6 | Ω | f = 1 MHz | 2 |
| Gate resistance (P-channel) | Rg | 1.3 | 6.4 | 12.8 | Ω | f = 1 MHz | 2 |
| Body diode voltage (N-channel) | VSD | 0.81 | 1.2 | V | IS = 5.4 A | 3 | |
| Body diode voltage (P-channel) | VSD | -0.77 | -1.2 | V | IS = -2 A | 3 |
CAD (KiCad official)
- Symbol:
SI4554DY-T1-GE3 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
si4554dy-t1-ge3-etched.step/si4554dy-t1-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si4554dy-t1-ge3.step/si4554dy-t1-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (14 pp, sha256
58cd0ede93ba4fe3, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).