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SI4497DY-T1-GE3

Public Made by Adom

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Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI4497DY-T1-GE3

Vishay Intertech · MOSFETs · SO-8

SI4497DY-T1-GE3 from Vishay Intertech, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET; drain-source voltage rated -30 V.
2 S passive Source terminal of the P-channel MOSFET; drain-source voltage rated -30 V.
3 S passive Source terminal of the P-channel MOSFET; drain-source voltage rated -30 V.
4 G input Gate terminal; gate-source voltage limit is ±20 V, with RDS(on) specified at VGS = -10 V and -4.5 V.
5 D passive Drain terminal; continuous drain current -36 A at TC = 25 °C, pulsed -70 A.
6 D passive Drain terminal; continuous drain current -36 A at TC = 25 °C, pulsed -70 A.
7 D passive Drain terminal; continuous drain current -36 A at TC = 25 °C, pulsed -70 A.
8 D passive Drain terminal; continuous drain current -36 A at TC = 25 °C, pulsed -70 A.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -36 A TJ = 150 °C; TC = 25 °C 1
Continuous Drain Current ID -29 A TJ = 150 °C; TC = 70 °C 1
Continuous Drain Current ID -24.8 A TA = 25 °C (notes a, b) 1
Continuous Drain Current ID -19.2 A TA = 70 °C (notes a, b) 1
Pulsed Drain Current IDM -70 A 1
Continuous Source-Drain Diode Current IS -6.5 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -2.9 A TA = 25 °C (notes a, b) 1
Avalanche Current IAS -30 A L = 0.1 mH 1
Single-Pulse Avalanche Energy EAS 45 mJ 1
Maximum Power Dissipation PD 7.8 W TC = 25 °C 1
Maximum Power Dissipation PD 5 W TC = 70 °C 1
Maximum Power Dissipation PD 3.5 W TA = 25 °C (notes a, b) 1
Maximum Power Dissipation PD 2.2 W TA = 70 °C (notes a, b) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 29 35 °C/W t ≤ 10 s (note b) 1
Maximum Junction-to-Ambient RthJA 80 °C/W Steady state (note c) 1
Maximum Junction-to-Foot Steady State RthJF 13 16 °C/W Steady state 1
Drain-Source Breakdown Voltage VDS -30 V VGS = 0 V, ID = -250 µA 2
Gate-Source Threshold Voltage VGS(th) -1 -2.5 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -5 µA VDS = -30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -30 A VDS ≥ -10 V, VGS = -10 V 2
Drain-Source On-State Resistance RDS(on) 0.0027 0.0033 Ω VGS = -10 V, ID = -20 A 2
Drain-Source On-State Resistance RDS(on) 0.0038 0.0046 Ω VGS = -4.5 V, ID = -15 A 2
Total Gate Charge Qg 190 285 nC VDS = -15 V, VGS = -10 V, ID = -20 A 2
Total Gate Charge Qg 90 135 nC VDS = -15 V, VGS = -4.5 V, ID = -20 A 2
Gate Resistance Rg 0.5 2.3 4.6 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 19 35 ns VDD = -15 V, RL = 1.5 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω 2
Rise Time tr 13 25 ns VDD = -15 V, RL = 1.5 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 115 200 ns VDD = -15 V, RL = 1.5 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω 2
Fall Time tf 25 50 ns VDD = -15 V, RL = 1.5 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 100 180 ns VDD = -15 V, RL = 1.5 Ω, ID ≅ -10 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise Time tr 75 150 ns VDD = -15 V, RL = 1.5 Ω, ID ≅ -10 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 100 180 ns VDD = -15 V, RL = 1.5 Ω, ID ≅ -10 A, VGEN = -4.5 V, Rg = 1 Ω 2
Fall Time tf 42 80 ns VDD = -15 V, RL = 1.5 Ω, ID ≅ -10 A, VGEN = -4.5 V, Rg = 1 Ω 2
Body Diode Voltage VSD -0.7 -1.2 V IS = -3 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 31 60 ns IF = -10 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 23 45 nC IF = -10 A, dI/dt = 100 A/µs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: SI4497DY-T1-GE3
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: si4497dy-t1-ge3-etched.step / si4497dy-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4497dy-t1-ge3.step / si4497dy-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (7 pp, sha256 57e2887e6065941d, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF