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SI4459ADY-T1-GE3

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Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI4459ADY-T1-GE3

Vishay Intertech · MOSFETs · SO-8

SI4459ADY-T1-GE3 from Vishay Intertech, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET; the absolute maximum drain-source voltage is VDS = -30 V and the gate-source voltage is ±20 V.
2 S passive Source terminal of the P-channel MOSFET; the absolute maximum drain-source voltage is VDS = -30 V and the gate-source voltage is ±20 V.
3 S passive Source terminal of the P-channel MOSFET; the absolute maximum drain-source voltage is VDS = -30 V and the gate-source voltage is ±20 V.
4 G input Gate terminal of the P-channel MOSFET; the gate-source voltage is rated at ±20 V (VGS).
5 D passive Drain terminal of the P-channel MOSFET; continuous drain current is -29 A at TC = 25 °C and the drain-source voltage is -30 V.
6 D passive Drain terminal of the P-channel MOSFET; continuous drain current is -29 A at TC = 25 °C and the drain-source voltage is -30 V.
7 D passive Drain terminal of the P-channel MOSFET; continuous drain current is -29 A at TC = 25 °C and the drain-source voltage is -30 V.
8 D passive Drain terminal of the P-channel MOSFET; continuous drain current is -29 A at TC = 25 °C and the drain-source voltage is -30 V.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -29 A TC = 25 °C; TJ = 150 °C 1
Continuous Drain Current ID -23.5 A TC = 70 °C 1
Continuous Drain Current ID -19.7 A TA = 25 °C (notes a, b) 1
Continuous Drain Current ID -15.6 A TA = 70 °C (notes a, b) 1
Pulsed Drain Current IDM -70 A 1
Continuous Source-Drain Diode Current IS -6.5 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -2.9 A TA = 25 °C (notes a, b) 1
Avalanche Current IAS -30 A L = 0.1 mH 1
Single-Pulse Avalanche Energy EAS 45 mJ 1
Maximum Power Dissipation PD 7.8 W TC = 25 °C 1
Maximum Power Dissipation PD 5 W TC = 70 °C 1
Maximum Power Dissipation PD 3.5 W TA = 25 °C (notes a, b) 1
Maximum Power Dissipation PD 2.2 W TA = 70 °C (notes a, b) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient (steady state) RthJA 80 °C/W steady state (note c) 1
Maximum Junction-to-Ambient RthJA 29 35 °C/W t 10 s 1
Maximum Junction-to-Foot Steady State RthJF 13 16 °C/W Steady state 1
Drain-Source Breakdown Voltage VDS -30 V VGS = 0 V, ID = - 250 µA 2
Gate-Source Threshold Voltage VGS(th) -1 -2.5 V VDS = VGS, ID = - 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS -100 µA VDS = - 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -75 µA VDS = - 20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = - 30 V, VGS = 0 V, TJ = 75 °C 2
Zero Gate Voltage Drain Current IDSS -3 µA VDS = - 20 V, VGS = 0 V, TJ = 75 °C 2
On-State Drain Current ID(on) -30 A VDS ≤ - 10 V, VGS = - 10 V 2
Drain-Source On-State Resistance RDS(on) 0.0039 0.005 Ω VGS = - 10 V, ID = - 15 A 2
Drain-Source On-State Resistance RDS(on) 0.0062 0.00775 Ω VGS = - 4.5 V, ID = - 10 A 2
Total Gate Charge Qg 129 195 nC VDS = - 15 V, VGS = - 10 V, ID = - 20 A 2
Total Gate Charge Qg 61 95 nC VDS = - 15 V, VGS = - 4.5 V, ID = - 20 A 2
Gate Resistance Rg 0.6 3 6 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 16 30 ns VDD = - 15 V, RL = 1.5, ID - 10 A, VGEN = - 10 V, Rg = 1 2
Rise Time tr 16 30 ns VDD = - 15 V, RL = 1.5, ID - 10 A, VGEN = - 10 V, Rg = 1 2
Turn-Off Delay Time td(off) 80 150 ns VDD = - 15 V, RL = 1.5, ID - 10 A, VGEN = - 10 V, Rg = 1 2
Fall Time tf 20 40 ns VDD = - 15 V, RL = 1.5, ID - 10 A, VGEN = - 10 V, Rg = 1 2
Turn-On Delay Time td(on) 75 150 ns VDD = - 15 V, RL = 1.5, ID - 10 A, VGEN = - 4.5 V, Rg = 1 2
Rise Time tr 130 260 ns VDD = - 15 V, RL = 1.5, ID - 10 A, VGEN = - 4.5 V, Rg = 1 2
Turn-Off Delay Time td(off) 60 120 ns VDD = - 15 V, RL = 1.5, ID - 10 A, VGEN = - 4.5 V, Rg = 1 2
Fall Time tf 40 80 ns VDD = - 15 V, RL = 1.5, ID - 10 A, VGEN = - 4.5 V, Rg = 1 2
Continuous Source-Drain Diode Current IS -29 A TC = 25 °C 2
Pulse Diode Forward Current ISM -70 A 2
Body Diode Voltage VSD -0.71 -1.2 V IS = - 3 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 67 130 ns IF = - 5 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 74 150 nC IF = - 5 A, dI/dt = 100 A/µs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: SI4459ADY-T1-GE3
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: si4459ady-t1-ge3-etched.step / si4459ady-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4459ady-t1-ge3.step / si4459ady-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 c4838fa3c0e5b55c, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF