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SI4459ADY-T1-GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI4459ADY-T1-GE3
Vishay Intertech · MOSFETs · SO-8
SI4459ADY-T1-GE3 from Vishay Intertech, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET; the absolute maximum drain-source voltage is VDS = -30 V and the gate-source voltage is ±20 V. |
| 2 | S | passive | Source terminal of the P-channel MOSFET; the absolute maximum drain-source voltage is VDS = -30 V and the gate-source voltage is ±20 V. |
| 3 | S | passive | Source terminal of the P-channel MOSFET; the absolute maximum drain-source voltage is VDS = -30 V and the gate-source voltage is ±20 V. |
| 4 | G | input | Gate terminal of the P-channel MOSFET; the gate-source voltage is rated at ±20 V (VGS). |
| 5 | D | passive | Drain terminal of the P-channel MOSFET; continuous drain current is -29 A at TC = 25 °C and the drain-source voltage is -30 V. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET; continuous drain current is -29 A at TC = 25 °C and the drain-source voltage is -30 V. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET; continuous drain current is -29 A at TC = 25 °C and the drain-source voltage is -30 V. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET; continuous drain current is -29 A at TC = 25 °C and the drain-source voltage is -30 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -29 | A | TC = 25 °C; TJ = 150 °C | 1 | ||
| Continuous Drain Current | ID | -23.5 | A | TC = 70 °C | 1 | ||
| Continuous Drain Current | ID | -19.7 | A | TA = 25 °C (notes a, b) | 1 | ||
| Continuous Drain Current | ID | -15.6 | A | TA = 70 °C (notes a, b) | 1 | ||
| Pulsed Drain Current | IDM | -70 | A | 1 | |||
| Continuous Source-Drain Diode Current | IS | -6.5 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | -2.9 | A | TA = 25 °C (notes a, b) | 1 | ||
| Avalanche Current | IAS | -30 | A | L = 0.1 mH | 1 | ||
| Single-Pulse Avalanche Energy | EAS | 45 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 7.8 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 5 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 3.5 | W | TA = 25 °C (notes a, b) | 1 | ||
| Maximum Power Dissipation | PD | 2.2 | W | TA = 70 °C (notes a, b) | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient (steady state) | RthJA | 80 | °C/W | steady state (note c) | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 29 | 35 | °C/W | t 10 s | 1 | |
| Maximum Junction-to-Foot Steady State | RthJF | 13 | 16 | °C/W | Steady state | 1 | |
| Drain-Source Breakdown Voltage | VDS | -30 | V | VGS = 0 V, ID = - 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -1 | -2.5 | V | VDS = VGS, ID = - 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -100 | µA | VDS = - 30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -75 | µA | VDS = - 20 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -10 | µA | VDS = - 30 V, VGS = 0 V, TJ = 75 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -3 | µA | VDS = - 20 V, VGS = 0 V, TJ = 75 °C | 2 | ||
| On-State Drain Current | ID(on) | -30 | A | VDS ≤ - 10 V, VGS = - 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.0039 | 0.005 | Ω | VGS = - 10 V, ID = - 15 A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.0062 | 0.00775 | Ω | VGS = - 4.5 V, ID = - 10 A | 2 | |
| Total Gate Charge | Qg | 129 | 195 | nC | VDS = - 15 V, VGS = - 10 V, ID = - 20 A | 2 | |
| Total Gate Charge | Qg | 61 | 95 | nC | VDS = - 15 V, VGS = - 4.5 V, ID = - 20 A | 2 | |
| Gate Resistance | Rg | 0.6 | 3 | 6 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 16 | 30 | ns | VDD = - 15 V, RL = 1.5, ID - 10 A, VGEN = - 10 V, Rg = 1 | 2 | |
| Rise Time | tr | 16 | 30 | ns | VDD = - 15 V, RL = 1.5, ID - 10 A, VGEN = - 10 V, Rg = 1 | 2 | |
| Turn-Off Delay Time | td(off) | 80 | 150 | ns | VDD = - 15 V, RL = 1.5, ID - 10 A, VGEN = - 10 V, Rg = 1 | 2 | |
| Fall Time | tf | 20 | 40 | ns | VDD = - 15 V, RL = 1.5, ID - 10 A, VGEN = - 10 V, Rg = 1 | 2 | |
| Turn-On Delay Time | td(on) | 75 | 150 | ns | VDD = - 15 V, RL = 1.5, ID - 10 A, VGEN = - 4.5 V, Rg = 1 | 2 | |
| Rise Time | tr | 130 | 260 | ns | VDD = - 15 V, RL = 1.5, ID - 10 A, VGEN = - 4.5 V, Rg = 1 | 2 | |
| Turn-Off Delay Time | td(off) | 60 | 120 | ns | VDD = - 15 V, RL = 1.5, ID - 10 A, VGEN = - 4.5 V, Rg = 1 | 2 | |
| Fall Time | tf | 40 | 80 | ns | VDD = - 15 V, RL = 1.5, ID - 10 A, VGEN = - 4.5 V, Rg = 1 | 2 | |
| Continuous Source-Drain Diode Current | IS | -29 | A | TC = 25 °C | 2 | ||
| Pulse Diode Forward Current | ISM | -70 | A | 2 | |||
| Body Diode Voltage | VSD | -0.71 | -1.2 | V | IS = - 3 A, VGS = 0 V | 2 | |
| Body Diode Reverse Recovery Time | trr | 67 | 130 | ns | IF = - 5 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 74 | 150 | nC | IF = - 5 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
CAD (KiCad official)
- Symbol:
SI4459ADY-T1-GE3 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
si4459ady-t1-ge3-etched.step/si4459ady-t1-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si4459ady-t1-ge3.step/si4459ady-t1-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (9 pp, sha256
c4838fa3c0e5b55c, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).