component
SI4459ADY-T1-GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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si4459ady-t1-ge3: specified limits as data (metadata.characteristics, 45 rows from the datasheet)
2 files changed
+600−1
README.md+52@@ -26,6 +26,58 @@ SI4459ADY-T1-GE3 from Vishay Intertech, in a SO-8. Pinout and pin descriptions e | Category | Transistors/Thyristors | | Pins | 8 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | -30 | V | | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Continuous Drain Current | ID | | | -29 | A | TC = 25 °C; TJ = 150 °C | 1 |+| Continuous Drain Current | ID | | | -23.5 | A | TC = 70 °C | 1 |+| Continuous Drain Current | ID | | | -19.7 | A | TA = 25 °C (notes a, b) | 1 |+| Continuous Drain Current | ID | | | -15.6 | A | TA = 70 °C (notes a, b) | 1 |+| Pulsed Drain Current | IDM | | | -70 | A | | 1 |+| Continuous Source-Drain Diode Current | IS | | | -6.5 | A | TC = 25 °C | 1 |+| Continuous Source-Drain Diode Current | IS | | | -2.9 | A | TA = 25 °C (notes a, b) | 1 |+| Avalanche Current | IAS | | | -30 | A | L = 0.1 mH | 1 |+| Single-Pulse Avalanche Energy | EAS | | | 45 | mJ | | 1 |+| Maximum Power Dissipation | PD | | | 7.8 | W | TC = 25 °C | 1 |+| Maximum Power Dissipation | PD | | | 5 | W | TC = 70 °C | 1 |+| Maximum Power Dissipation | PD | | | 3.5 | W | TA = 25 °C (notes a, b) | 1 |+| Maximum Power Dissipation | PD | | | 2.2 | W | TA = 70 °C (notes a, b) | 1 |+| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |+| Maximum Junction-to-Ambient (steady state) | RthJA | | | 80 | °C/W | steady state (note c) | 1 |+| Maximum Junction-to-Ambient | RthJA | | 29 | 35 | °C/W | t 10 s | 1 |+| Maximum Junction-to-Foot Steady State | RthJF | | 13 | 16 | °C/W | Steady state | 1 |+| Drain-Source Breakdown Voltage | VDS | -30 | | | V | VGS = 0 V, ID = - 250 µA | 2 |+| Gate-Source Threshold Voltage | VGS(th) | -1 | | -2.5 | V | VDS = VGS, ID = - 250 µA | 2 |+| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | -100 | µA | VDS = - 30 V, VGS = 0 V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | -75 | µA | VDS = - 20 V, VGS = 0 V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | -10 | µA | VDS = - 30 V, VGS = 0 V, TJ = 75 °C | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | -3 | µA | VDS = - 20 V, VGS = 0 V, TJ = 75 °C | 2 |+| On-State Drain Current | ID(on) | -30 | | | A | VDS ≤ - 10 V, VGS = - 10 V | 2 |+| Drain-Source On-State Resistance | RDS(on) | | 0.0039 | 0.005 | Ω | VGS = - 10 V, ID = - 15 A | 2 |+| Drain-Source On-State Resistance | RDS(on) | | 0.0062 | 0.00775 | Ω | VGS = - 4.5 V, ID = - 10 A | 2 |+| Total Gate Charge | Qg | | 129 | 195 | nC | VDS = - 15 V, VGS = - 10 V, ID = - 20 A | 2 |+| Total Gate Charge | Qg | | 61 | 95 | nC | VDS = - 15 V, VGS = - 4.5 V, ID = - 20 A | 2 |+| Gate Resistance | Rg | 0.6 | 3 | 6 | Ω | f = 1 MHz | 2 |+| Turn-On Delay Time | td(on) | | 16 | 30 | ns | VDD = - 15 V, RL = 1.5, ID - 10 A, VGEN = - 10 V, Rg = 1 | 2 |+| Rise Time | tr | | 16 | 30 | ns | VDD = - 15 V, RL = 1.5, ID - 10 A, VGEN = - 10 V, Rg = 1 | 2 |+| Turn-Off Delay Time | td(off) | | 80 | 150 | ns | VDD = - 15 V, RL = 1.5, ID - 10 A, VGEN = - 10 V, Rg = 1 | 2 |+| Fall Time | tf | | 20 | 40 | ns | VDD = - 15 V, RL = 1.5, ID - 10 A, VGEN = - 10 V, Rg = 1 | 2 |+| Turn-On Delay Time | td(on) | | 75 | 150 | ns | VDD = - 15 V, RL = 1.5, ID - 10 A, VGEN = - 4.5 V, Rg = 1 | 2 |+| Rise Time | tr | | 130 | 260 | ns | VDD = - 15 V, RL = 1.5, ID - 10 A, VGEN = - 4.5 V, Rg = 1 | 2 |+| Turn-Off Delay Time | td(off) | | 60 | 120 | ns | VDD = - 15 V, RL = 1.5, ID - 10 A, VGEN = - 4.5 V, Rg = 1 | 2 |+| Fall Time | tf | | 40 | 80 | ns | VDD = - 15 V, RL = 1.5, ID - 10 A, VGEN = - 4.5 V, Rg = 1 | 2 |+| Continuous Source-Drain Diode Current | IS | | | -29 | A | TC = 25 °C | 2 |+| Pulse Diode Forward Current | ISM | | | -70 | A | | 2 |+| Body Diode Voltage | VSD | | -0.71 | -1.2 | V | IS = - 3 A, VGS = 0 V | 2 |+| Body Diode Reverse Recovery Time | trr | | 67 | 130 | ns | IF = - 5 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |+| Body Diode Reverse Recovery Charge | Qrr | | 74 | 150 | nC | IF = - 5 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |+ ## CAD (KiCad official) - Symbol: `SI4459ADY-T1-GE3`
page.json+548−1@@ -179,6 +179,553 @@ "Package": "SO-8", "Category": "Transistors/Thyristors", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "c4838fa3c0e5b55c",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -30,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -29,+ "conditions": "TC = 25 °C; TJ = 150 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -23.5,+ "conditions": "TC = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -19.7,+ "conditions": "TA = 25 °C (notes a, b)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -15.6,+ "conditions": "TA = 70 °C (notes a, b)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -70,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source-Drain Diode Current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -6.5,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source-Drain Diode Current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -2.9,+ "conditions": "TA = 25 °C (notes a, b)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Current",+ "symbol": "IAS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -30,+ "conditions": "L = 0.1 mH",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single-Pulse Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 45,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 7.8,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "TC = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 3.5,+ "conditions": "TA = 25 °C (notes a, b)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2.2,+ "conditions": "TA = 70 °C (notes a, b)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient (steady state)",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "steady state (note c)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 29,+ "max": 35,+ "conditions": "t 10 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Foot Steady State",+ "symbol": "RthJF",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 13,+ "max": 16,+ "conditions": "Steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "VDS",+ "kind": "electrical",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = - 250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -1,+ "typ": null,+ "max": -2.5,+ "conditions": "VDS = VGS, ID = - 250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0 V, VGS = ± 20 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -100,+ "conditions": "VDS = - 30 V, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -75,+ "conditions": "VDS = - 20 V, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -10,+ "conditions": "VDS = - 30 V, VGS = 0 V, TJ = 75 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -3,+ "conditions": "VDS = - 20 V, VGS = 0 V, TJ = 75 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-State Drain Current",+ "symbol": "ID(on)",+ "kind": "electrical",+ "unit": "A",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "VDS ≤ - 10 V, VGS = - 10 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.0039,+ "max": 0.005,+ "conditions": "VGS = - 10 V, ID = - 15 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.0062,+ "max": 0.00775,+ "conditions": "VGS = - 4.5 V, ID = - 10 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 129,+ "max": 195,+ "conditions": "VDS = - 15 V, VGS = - 10 V, ID = - 20 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 61,+ "max": 95,+ "conditions": "VDS = - 15 V, VGS = - 4.5 V, ID = - 20 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": 0.6,+ "typ": 3,+ "max": 6,+ "conditions": "f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 16,+ "max": 30,+ "conditions": "VDD = - 15 V, RL = 1.5, ID - 10 A, VGEN = - 10 V, Rg = 1",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise Time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 16,+ "max": 30,+ "conditions": "VDD = - 15 V, RL = 1.5, ID - 10 A, VGEN = - 10 V, Rg = 1",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 80,+ "max": 150,+ "conditions": "VDD = - 15 V, RL = 1.5, ID - 10 A, VGEN = - 10 V, Rg = 1",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall Time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 20,+ "max": 40,+ "conditions": "VDD = - 15 V, RL = 1.5, ID - 10 A, VGEN = - 10 V, Rg = 1",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 75,+ "max": 150,+ "conditions": "VDD = - 15 V, RL = 1.5, ID - 10 A, VGEN = - 4.5 V, Rg = 1",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise Time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 130,+ "max": 260,+ "conditions": "VDD = - 15 V, RL = 1.5, ID - 10 A, VGEN = - 4.5 V, Rg = 1",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 60,+ "max": 120,+ "conditions": "VDD = - 15 V, RL = 1.5, ID - 10 A, VGEN = - 4.5 V, Rg = 1",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall Time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 40,+ "max": 80,+ "conditions": "VDD = - 15 V, RL = 1.5, ID - 10 A, VGEN = - 4.5 V, Rg = 1",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source-Drain Diode Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -29,+ "conditions": "TC = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulse Diode Forward Current",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -70,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": -0.71,+ "max": -1.2,+ "conditions": "IS = - 3 A, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 67,+ "max": 130,+ "conditions": "IF = - 5 A, dI/dt = 100 A/µs, TJ = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 74,+ "max": 150,+ "conditions": "IF = - 5 A, dI/dt = 100 A/µs, TJ = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -220,4 +767,4 @@ "visibility": { "public": true }-}+}