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SI4435DYTRPBF
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Infineon Technologies MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SI4435DYTRPBF
Infineon Technologies · MOSFETs · SO-8
SI4435DYTRPBF from Infineon Technologies, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel HEXFET; the absolute maximum drain-to-source voltage is -30 V. |
| 2 | S | passive | Source terminal of the P-channel HEXFET; the absolute maximum drain-to-source voltage is -30 V. |
| 3 | S | passive | Source terminal of the P-channel HEXFET; the absolute maximum drain-to-source voltage is -30 V. |
| 4 | G | input | Gate terminal; the absolute maximum gate-to-source voltage is ±20 V. |
| 5 | D | passive | Drain terminal; continuous drain current is -8.0 A at TA = 25°C and -6.4 A at TA = 70°C, with pulsed drain current of -50 A. |
| 6 | D | passive | Drain terminal; continuous drain current is -8.0 A at TA = 25°C and -6.4 A at TA = 70°C, with pulsed drain current of -50 A. |
| 7 | D | passive | Drain terminal; continuous drain current is -8.0 A at TA = 25°C and -6.4 A at TA = 70°C, with pulsed drain current of -50 A. |
| 8 | D | passive | Drain terminal; continuous drain current is -8.0 A at TA = 25°C and -6.4 A at TA = 70°C, with pulsed drain current of -50 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Continuous Drain Current, VGS @ -10V, TA = 25°C | ID | -8 | A | VGS @ -10V, TA = 25°C | 1 | ||
| Continuous Drain Current, VGS @ -10V, TA = 70°C | ID | -6.4 | A | VGS @ -10V, TA = 70°C | 1 | ||
| Pulsed Drain Current | IDM | -50 | A | 1 | |||
| Power Dissipation, TA = 25°C | PD | 2.5 | W | TA = 25°C | 1 | ||
| Power Dissipation, TA = 70°C | PD | 1.6 | W | TA = 70°C | 1 | ||
| Linear Derating Factor | 0.02 | W/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient Thermal Resistance | RθJA | 50 | °C/W | 1 | |||
| Continuous Source Current (Body Diode) | VSD | -1.2 | V | 2 | |||
| Diode Forward Voltage | VSD | -1.2 | V | TJ = 25°C, IS = -2.5A, VGS = 0V | 2 | ||
| Reverse Recovery Time | trr | 34 | 51 | ns | TJ = 25°C, IF = -2.5A | 2 | |
| Reverse Recovery Charge | Qrr | 33 | 50 | nC | di/dt = -100A/µs | 2 | |
| Drain-to-Source Breakdown Voltage | V(BR)DSS | -30 | V | VGS = 0V, ID = -250µA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 0.015 | 0.02 | Ω | VGS = -10V, ID = -8.0A | 2 | |
| Static Drain-to-Source On-Resistance | RDS(on) | 0.026 | 0.035 | Ω | VGS = -4.5V, ID = -5.0A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | V | VDS = VGS, ID = -250µA | 2 | ||
| Drain-to-Source Leakage Current | IDSS | -10 | VDS = -24V, VGS = 0V | 2 | |||
| Drain-to-Source Leakage Current, TJ = 70°C | IDSS | -10 | VDS = -15V, VGS = 0V, TJ = 70°C | 2 | |||
| Gate-to-Source Forward Leakage | IGSS | -100 | VGS = -20V | 2 | |||
| Gate-to-Source Reverse Leakage | IGSS | 100 | VGS = 20V | 2 | |||
| Total Gate Charge | Qg | 40 | 60 | nC | ID = -4.6A | 2 | |
| Turn-On Delay Time | td(on) | 16 | 24 | ns | VDD = -15V, VGS = -10V | 2 | |
| Rise Time | tr | 76 | 110 | ns | ID = -1.0A | 2 | |
| Turn-Off Delay Time | td(off) | 130 | 200 | ns | RG = 6.0Ω | 2 | |
| Fall Time | tf | 90 | 140 | ns | RD = 15Ω | 2 |
CAD (KiCad official)
- Symbol:
SI4435DYTRPBF - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
si4435dytrpbf-etched.step/si4435dytrpbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si4435dytrpbf.step/si4435dytrpbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (8 pp, sha256
14c9f52e382d8fd8, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SI4435DYTRPBF
**Infineon Technologies** · MOSFETs · SO-8
SI4435DYTRPBF from Infineon Technologies, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel HEXFET; the absolute maximum drain-to-source voltage is -30 V. |
| 2 | S | passive | Source terminal of the P-channel HEXFET; the absolute maximum drain-to-source voltage is -30 V. |
| 3 | S | passive | Source terminal of the P-channel HEXFET; the absolute maximum drain-to-source voltage is -30 V. |
| 4 | G | input | Gate terminal; the absolute maximum gate-to-source voltage is ±20 V. |
| 5 | D | passive | Drain terminal; continuous drain current is -8.0 A at TA = 25°C and -6.4 A at TA = 70°C, with pulsed drain current of -50 A. |
| 6 | D | passive | Drain terminal; continuous drain current is -8.0 A at TA = 25°C and -6.4 A at TA = 70°C, with pulsed drain current of -50 A. |
| 7 | D | passive | Drain terminal; continuous drain current is -8.0 A at TA = 25°C and -6.4 A at TA = 70°C, with pulsed drain current of -50 A. |
| 8 | D | passive | Drain terminal; continuous drain current is -8.0 A at TA = 25°C and -6.4 A at TA = 70°C, with pulsed drain current of -50 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | -30 | V | | 1 |
| Continuous Drain Current, VGS @ -10V, TA = 25°C | ID | | | -8 | A | VGS @ -10V, TA = 25°C | 1 |
| Continuous Drain Current, VGS @ -10V, TA = 70°C | ID | | | -6.4 | A | VGS @ -10V, TA = 70°C | 1 |
| Pulsed Drain Current | IDM | | | -50 | A | | 1 |
| Power Dissipation, TA = 25°C | PD | | | 2.5 | W | TA = 25°C | 1 |
| Power Dissipation, TA = 70°C | PD | | | 1.6 | W | TA = 70°C | 1 |
| Linear Derating Factor | | | | 0.02 | W/°C | | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient Thermal Resistance | RθJA | | | 50 | °C/W | | 1 |
| Continuous Source Current (Body Diode) | VSD | | | -1.2 | V | | 2 |
| Diode Forward Voltage | VSD | | | -1.2 | V | TJ = 25°C, IS = -2.5A, VGS = 0V | 2 |
| Reverse Recovery Time | trr | | 34 | 51 | ns | TJ = 25°C, IF = -2.5A | 2 |
| Reverse Recovery Charge | Qrr | | 33 | 50 | nC | di/dt = -100A/µs | 2 |
| Drain-to-Source Breakdown Voltage | V(BR)DSS | -30 | | | V | VGS = 0V, ID = -250µA | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 0.015 | 0.02 | Ω | VGS = -10V, ID = -8.0A | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 0.026 | 0.035 | Ω | VGS = -4.5V, ID = -5.0A | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | | | V | VDS = VGS, ID = -250µA | 2 |
| Drain-to-Source Leakage Current | IDSS | | | -10 | | VDS = -24V, VGS = 0V | 2 |
| Drain-to-Source Leakage Current, TJ = 70°C | IDSS | | | -10 | | VDS = -15V, VGS = 0V, TJ = 70°C | 2 |
| Gate-to-Source Forward Leakage | IGSS | | | -100 | | VGS = -20V | 2 |
| Gate-to-Source Reverse Leakage | IGSS | | | 100 | | VGS = 20V | 2 |
| Total Gate Charge | Qg | | 40 | 60 | nC | ID = -4.6A | 2 |
| Turn-On Delay Time | td(on) | | 16 | 24 | ns | VDD = -15V, VGS = -10V | 2 |
| Rise Time | tr | | 76 | 110 | ns | ID = -1.0A | 2 |
| Turn-Off Delay Time | td(off) | | 130 | 200 | ns | RG = 6.0Ω | 2 |
| Fall Time | tf | | 90 | 140 | ns | RD = 15Ω | 2 |
## CAD (KiCad official)
- Symbol: `SI4435DYTRPBF`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `si4435dytrpbf-etched.step` / `si4435dytrpbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si4435dytrpbf.step` / `si4435dytrpbf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586186397681770496) (8 pp, sha256 `14c9f52e382d8fd8`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/si4435dytrpbf-datasheet.pdf)