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SI4431CDY-T1-GE3

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Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Ray si4431cdy-t1-ge3: specified limits as data (metadata.characteristics, 41 rows from the datasheet) cfe7bbe 17d ago

SI4431CDY-T1-GE3

Vishay Intertech · MOSFETs · SO-8

SI4431CDY-T1-GE3 from Vishay Intertech, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET; the datasheet gives the source-drain diode continuous current as -3.5 A at TC = 25 °C.
2 S passive Source terminal of the P-channel MOSFET; the datasheet gives the source-drain diode continuous current as -3.5 A at TC = 25 °C.
3 S passive Source terminal of the P-channel MOSFET; the datasheet gives the source-drain diode continuous current as -3.5 A at TC = 25 °C.
4 G input Gate of the P-channel MOSFET; the datasheet gives the gate-source voltage limit as ±20 V.
5 D passive Drain terminal of the P-channel MOSFET; the datasheet gives the drain-source voltage as -30 V (VDS).
6 D passive Drain terminal of the P-channel MOSFET; the datasheet gives the drain-source voltage as -30 V (VDS).
7 D passive Drain terminal of the P-channel MOSFET; the datasheet gives the drain-source voltage as -30 V (VDS).
8 D passive Drain terminal of the P-channel MOSFET; the datasheet gives the drain-source voltage as -30 V (VDS).

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -9 A TJ = 150 °C; TC = 25 °C 1
Continuous Drain Current ID -7.2 A TJ = 150 °C; TC = 70 °C 1
Continuous Drain Current ID -7 A TA = 25 °C (notes a, b) 1
Continuous Drain Current ID -5.6 A TA = 70 °C (notes a, b) 1
Pulsed Drain Current IDM -30 A 1
Continuous Source-Drain Diode Current IS -3.5 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -2.1 A TA = 25 °C (notes a, b) 1
Maximum Power Dissipation PD 4.2 W TC = 25 °C 1
Maximum Power Dissipation PD 2.7 W TC = 70 °C 1
Maximum Power Dissipation PD 2.5 W TA = 25 °C (notes a, b) 1
Maximum Power Dissipation PD 1.6 W TA = 70 °C (notes a, b) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 40 50 °C/W t ≤ 10 s 1
Maximum Junction-to-Ambient (steady state) RthJA 95 °C/W Steady state, per note c 1
Maximum Junction-to-Foot (steady state) RthJF 24 30 °C/W Steady state 1
Drain-Source Breakdown Voltage VDS -30 V VGS = 0 V, ID = -250 µA 2
Gate-Source Threshold Voltage VGS(th) -1 -2.5 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -5 µA VDS = -30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -20 A VDS ≤ -5 V, VGS = -10 V 2
Drain-Source On-State Resistance RDS(on) 0.026 0.032 Ω VGS = -10 V, ID = -7.0 A 2
Drain-Source On-State Resistance RDS(on) 0.037 0.049 Ω VGS = -4.5 V, ID = -5.6 A 2
Gate Resistance Rg 0.4 2 4 Ω f = 1 MHz 2
Total Gate Charge Qg 25 38 nC VDS = -15 V, VGS = -10 V, ID = -7.0 A 2
Total Gate Charge Qg 13 20 nC VDS = -15 V, VGS = -4.5 V, ID = -7.0 A 2
Turn-On Delay Time td(on) 10 20 ns VDD = -15 V, RL = 2.7 Ω, ID ≅ -5.6 A, VGEN = -10 V, Rg = 1 Ω 2
Rise Time tr 13 20 ns VDD = -15 V, RL = 2.7 Ω, ID ≅ -5.6 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 23 35 ns VDD = -15 V, RL = 2.7 Ω, ID ≅ -5.6 A, VGEN = -10 V, Rg = 1 Ω 2
Fall Time tf 9 18 ns VDD = -15 V, RL = 2.7 Ω, ID ≅ -5.6 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 38 57 ns VDD = -15 V, RL = 2.7 Ω, ID ≅ -5.6 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise Time tr 89 134 ns VDD = -15 V, RL = 2.7 Ω, ID ≅ -5.6 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 22 33 ns VDD = -15 V, RL = 2.7 Ω, ID ≅ -5.6 A, VGEN = -4.5 V, Rg = 1 Ω 2
Fall Time tf 11 17 ns VDD = -15 V, RL = 2.7 Ω, ID ≅ -5.6 A, VGEN = -4.5 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS -3.5 A TC = 25 °C 2
Pulse Diode Forward Current ISM -30 A 2
Body Diode Voltage VSD -0.71 -1.2 V IS = -5.6 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 22 33 ns IF = -5.6 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 17 26 nC IF = -5.6 A, dI/dt = 100 A/µs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: SI4431CDY-T1-GE3
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: si4431cdy-t1-ge3-etched.step / si4431cdy-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4431cdy-t1-ge3.step / si4431cdy-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 056fd0ab9185e3ee, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF