component
SI4431CDY-T1-GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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si4431cdy-t1-ge3: specified limits as data (metadata.characteristics, 41 rows from the datasheet)
2 files changed
+548−1
README.md+48@@ -26,6 +26,54 @@ SI4431CDY-T1-GE3 from Vishay Intertech, in a SO-8. Pinout and pin descriptions e | Category | Transistors/Thyristors | | Pins | 8 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | -30 | V | | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Continuous Drain Current | ID | | | -9 | A | TJ = 150 °C; TC = 25 °C | 1 |+| Continuous Drain Current | ID | | | -7.2 | A | TJ = 150 °C; TC = 70 °C | 1 |+| Continuous Drain Current | ID | | | -7 | A | TA = 25 °C (notes a, b) | 1 |+| Continuous Drain Current | ID | | | -5.6 | A | TA = 70 °C (notes a, b) | 1 |+| Pulsed Drain Current | IDM | | | -30 | A | | 1 |+| Continuous Source-Drain Diode Current | IS | | | -3.5 | A | TC = 25 °C | 1 |+| Continuous Source-Drain Diode Current | IS | | | -2.1 | A | TA = 25 °C (notes a, b) | 1 |+| Maximum Power Dissipation | PD | | | 4.2 | W | TC = 25 °C | 1 |+| Maximum Power Dissipation | PD | | | 2.7 | W | TC = 70 °C | 1 |+| Maximum Power Dissipation | PD | | | 2.5 | W | TA = 25 °C (notes a, b) | 1 |+| Maximum Power Dissipation | PD | | | 1.6 | W | TA = 70 °C (notes a, b) | 1 |+| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |+| Maximum Junction-to-Ambient | RthJA | | 40 | 50 | °C/W | t ≤ 10 s | 1 |+| Maximum Junction-to-Ambient (steady state) | RthJA | | | 95 | °C/W | Steady state, per note c | 1 |+| Maximum Junction-to-Foot (steady state) | RthJF | | 24 | 30 | °C/W | Steady state | 1 |+| Drain-Source Breakdown Voltage | VDS | -30 | | | V | VGS = 0 V, ID = -250 µA | 2 |+| Gate-Source Threshold Voltage | VGS(th) | -1 | | -2.5 | V | VDS = VGS, ID = -250 µA | 2 |+| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | VDS = -30 V, VGS = 0 V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | -5 | µA | VDS = -30 V, VGS = 0 V, TJ = 55 °C | 2 |+| On-State Drain Current | ID(on) | -20 | | | A | VDS ≤ -5 V, VGS = -10 V | 2 |+| Drain-Source On-State Resistance | RDS(on) | | 0.026 | 0.032 | Ω | VGS = -10 V, ID = -7.0 A | 2 |+| Drain-Source On-State Resistance | RDS(on) | | 0.037 | 0.049 | Ω | VGS = -4.5 V, ID = -5.6 A | 2 |+| Gate Resistance | Rg | 0.4 | 2 | 4 | Ω | f = 1 MHz | 2 |+| Total Gate Charge | Qg | | 25 | 38 | nC | VDS = -15 V, VGS = -10 V, ID = -7.0 A | 2 |+| Total Gate Charge | Qg | | 13 | 20 | nC | VDS = -15 V, VGS = -4.5 V, ID = -7.0 A | 2 |+| Turn-On Delay Time | td(on) | | 10 | 20 | ns | VDD = -15 V, RL = 2.7 Ω, ID ≅ -5.6 A, VGEN = -10 V, Rg = 1 Ω | 2 |+| Rise Time | tr | | 13 | 20 | ns | VDD = -15 V, RL = 2.7 Ω, ID ≅ -5.6 A, VGEN = -10 V, Rg = 1 Ω | 2 |+| Turn-Off Delay Time | td(off) | | 23 | 35 | ns | VDD = -15 V, RL = 2.7 Ω, ID ≅ -5.6 A, VGEN = -10 V, Rg = 1 Ω | 2 |+| Fall Time | tf | | 9 | 18 | ns | VDD = -15 V, RL = 2.7 Ω, ID ≅ -5.6 A, VGEN = -10 V, Rg = 1 Ω | 2 |+| Turn-On Delay Time | td(on) | | 38 | 57 | ns | VDD = -15 V, RL = 2.7 Ω, ID ≅ -5.6 A, VGEN = -4.5 V, Rg = 1 Ω | 2 |+| Rise Time | tr | | 89 | 134 | ns | VDD = -15 V, RL = 2.7 Ω, ID ≅ -5.6 A, VGEN = -4.5 V, Rg = 1 Ω | 2 |+| Turn-Off Delay Time | td(off) | | 22 | 33 | ns | VDD = -15 V, RL = 2.7 Ω, ID ≅ -5.6 A, VGEN = -4.5 V, Rg = 1 Ω | 2 |+| Fall Time | tf | | 11 | 17 | ns | VDD = -15 V, RL = 2.7 Ω, ID ≅ -5.6 A, VGEN = -4.5 V, Rg = 1 Ω | 2 |+| Continuous Source-Drain Diode Current | IS | | | -3.5 | A | TC = 25 °C | 2 |+| Pulse Diode Forward Current | ISM | | | -30 | A | | 2 |+| Body Diode Voltage | VSD | | -0.71 | -1.2 | V | IS = -5.6 A, VGS = 0 V | 2 |+| Body Diode Reverse Recovery Time | trr | | 22 | 33 | ns | IF = -5.6 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |+| Body Diode Reverse Recovery Charge | Qrr | | 17 | 26 | nC | IF = -5.6 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |+ ## CAD (KiCad official) - Symbol: `SI4431CDY-T1-GE3`
page.json+500−1@@ -179,6 +179,505 @@ "Package": "SO-8", "Category": "Transistors/Thyristors", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "056fd0ab9185e3ee",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -30,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -9,+ "conditions": "TJ = 150 °C; TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -7.2,+ "conditions": "TJ = 150 °C; TC = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -7,+ "conditions": "TA = 25 °C (notes a, b)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -5.6,+ "conditions": "TA = 70 °C (notes a, b)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -30,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source-Drain Diode Current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -3.5,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source-Drain Diode Current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -2.1,+ "conditions": "TA = 25 °C (notes a, b)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 4.2,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2.7,+ "conditions": "TC = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "TA = 25 °C (notes a, b)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.6,+ "conditions": "TA = 70 °C (notes a, b)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 40,+ "max": 50,+ "conditions": "t ≤ 10 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient (steady state)",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 95,+ "conditions": "Steady state, per note c",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Foot (steady state)",+ "symbol": "RthJF",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 24,+ "max": 30,+ "conditions": "Steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "VDS",+ "kind": "electrical",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = -250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -1,+ "typ": null,+ "max": -2.5,+ "conditions": "VDS = VGS, ID = -250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0 V, VGS = ±20 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS = -30 V, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -5,+ "conditions": "VDS = -30 V, VGS = 0 V, TJ = 55 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-State Drain Current",+ "symbol": "ID(on)",+ "kind": "electrical",+ "unit": "A",+ "min": -20,+ "typ": null,+ "max": null,+ "conditions": "VDS ≤ -5 V, VGS = -10 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.026,+ "max": 0.032,+ "conditions": "VGS = -10 V, ID = -7.0 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.037,+ "max": 0.049,+ "conditions": "VGS = -4.5 V, ID = -5.6 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": 0.4,+ "typ": 2,+ "max": 4,+ "conditions": "f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 25,+ "max": 38,+ "conditions": "VDS = -15 V, VGS = -10 V, ID = -7.0 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 13,+ "max": 20,+ "conditions": "VDS = -15 V, VGS = -4.5 V, ID = -7.0 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time",+ "symbol": "td(on)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 10,+ "max": 20,+ "conditions": "VDD = -15 V, RL = 2.7 Ω, ID ≅ -5.6 A, VGEN = -10 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise Time",+ "symbol": "tr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 13,+ "max": 20,+ "conditions": "VDD = -15 V, RL = 2.7 Ω, ID ≅ -5.6 A, VGEN = -10 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "td(off)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 23,+ "max": 35,+ "conditions": "VDD = -15 V, RL = 2.7 Ω, ID ≅ -5.6 A, VGEN = -10 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall Time",+ "symbol": "tf",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 9,+ "max": 18,+ "conditions": "VDD = -15 V, RL = 2.7 Ω, ID ≅ -5.6 A, VGEN = -10 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time",+ "symbol": "td(on)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 38,+ "max": 57,+ "conditions": "VDD = -15 V, RL = 2.7 Ω, ID ≅ -5.6 A, VGEN = -4.5 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise Time",+ "symbol": "tr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 89,+ "max": 134,+ "conditions": "VDD = -15 V, RL = 2.7 Ω, ID ≅ -5.6 A, VGEN = -4.5 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "td(off)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 22,+ "max": 33,+ "conditions": "VDD = -15 V, RL = 2.7 Ω, ID ≅ -5.6 A, VGEN = -4.5 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall Time",+ "symbol": "tf",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 11,+ "max": 17,+ "conditions": "VDD = -15 V, RL = 2.7 Ω, ID ≅ -5.6 A, VGEN = -4.5 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source-Drain Diode Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -3.5,+ "conditions": "TC = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulse Diode Forward Current",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -30,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": -0.71,+ "max": -1.2,+ "conditions": "IS = -5.6 A, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 22,+ "max": 33,+ "conditions": "IF = -5.6 A, dI/dt = 100 A/µs, TJ = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 17,+ "max": 26,+ "conditions": "IF = -5.6 A, dI/dt = 100 A/µs, TJ = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -220,4 +719,4 @@ "visibility": { "public": true }-}+}