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SI4425FDY-T1-GE3

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Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI4425FDY-T1-GE3

Vishay Intertech · MOSFETs · SO-8

SI4425FDY-T1-GE3 from Vishay Intertech, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET; the source-drain diode continuous current is rated at -4 A at TC = 25 °C with drain-source voltage VDS = -30 V.
2 S passive Source terminal of the P-channel MOSFET, bonded in parallel with pins 1 and 3; the device is rated for VDS = -30 V and pulsed drain current IDM = -70 A (t = 100 μs).
3 S passive Source terminal of the P-channel MOSFET, bonded in parallel with pins 1 and 2; the device is rated for VDS = -30 V and continuous drain current ID = -18.3 A at TC = 25 °C.
4 G input Gate terminal; the gate-source voltage must stay within the absolute maximum ratings of -20 V / +16 V.
5 D passive Drain terminal, electrically common with pins 6-8 and the drain tab; rated for VDS = -30 V and ID = -18.3 A at TC = 25 °C.
6 D passive Drain terminal, electrically common with pins 5, 7 and 8 and the drain tab; rated for VDS = -30 V and ID = -18.3 A at TC = 25 °C.
7 D passive Drain terminal, electrically common with pins 5, 6 and 8 and the drain tab; rated for VDS = -30 V and ID = -18.3 A at TC = 25 °C.
8 D passive Drain terminal, electrically common with pins 5-7 and the drain tab; rated for VDS = -30 V and ID = -18.3 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS -30 V TA = 25 °C, unless otherwise noted 1
Gate-source voltage VGS -20 16 V 1
Continuous drain current ID -18.3 A TJ = 150 °C, TC = 25 °C 1
Continuous drain current ID -14.7 A TJ = 150 °C, TC = 70 °C 1
Continuous drain current ID -12.7 A TJ = 150 °C, TA = 25 °C, notes b, c 1
Continuous drain current ID -10.2 A TJ = 150 °C, TA = 70 °C, notes b, c 1
Pulsed drain current IDM -70 A t = 100 μs 1
Continuous source-drain diode current IS -4 A TC = 25 °C 1
Continuous source-drain diode current IS -1.9 A TA = 70 °C, notes b, c 1
Single pulse avalanche current IAS 15 A L = 0.1 mH 1
Single pulse avalanche energy EAS 11.25 mJ 1
Maximum power dissipation PD 4.8 W TC = 25 °C 1
Maximum power dissipation PD 3.1 W TC = 70 °C 1
Maximum power dissipation PD 2.3 W TA = 25 °C, notes b, c 1
Maximum power dissipation PD 1.5 W TA = 70 °C, notes b, c 1
Operating junction and storage temperature range TJ, Tstg -55 150 °C 1
Soldering recommendations peak temperature 260 °C notes d, e 1
Maximum junction-to-ambient RthJA 42 53 °C/W t ≤ 10 s, notes b, d 1
Maximum junction-to-ambient (steady state) RthJA 90 °C/W Steady state, note d 1
Maximum junction-to-case (drain) RthJF 21 26 °C/W Steady state 1
Drain-source breakdown voltage VDS -30 V VGS = 0 V, ID = -250 μA 2
Gate-source threshold voltage VGS(th) -1 -2.2 V VDS = VGS, ID = -250 μA 2
Gate-source leakage IGSS -100 100 nA VDS = 0 V, VGS = -20 V / +16 V 2
Zero gate voltage drain current IDSS -1 μA VDS = -30 V, VGS = 0 V 2
Zero gate voltage drain current IDSS -10 μA VDS = -30 V, VGS = 0 V, TJ = 55 °C 2
On-state drain current ID(on) -10 A VDS -5 V, VGS = 10 V 2
Drain-source on-state resistance RDS(on) 0.0077 0.0095 Ω VGS = -10 V, ID = -10 A 2
Drain-source on-state resistance RDS(on) 0.0127 0.016 Ω VGS = -4.5 V, ID = -10 A 2
Total gate charge Qg 27 41 nC VDS = -15 V, VGS = -10 V, ID = -10 A 2
Total gate charge Qg 13 20 nC VDS = -15 V, VGS = -4.5 V, ID = -10 A 2
Gate resistance Rg 4 10 17 Ω f = 1 MHz 2
Turn-on delay time td(on) 22 44 ns VDD = -15 V, RL = 1.5 Ω, ID -10 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise time tr 48 96 ns VDD = -15 V, RL = 1.5 Ω, ID -10 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-off delay time td(off) 29 58 ns VDD = -15 V, RL = 1.5 Ω, ID -10 A, VGEN = -4.5 V, Rg = 1 Ω 2
Fall time tf 23 46 ns VDD = -15 V, RL = 1.5 Ω, ID -10 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-on delay time td(on) 8 18 ns VDD = -15 V, RL = 1.5 Ω, ID -10 A, VGEN = -10 V, Rg = 1 Ω 2
Rise time tr 6 12 ns VDD = -15 V, RL = 1.5 Ω, ID -10 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-off delay time td(off) 42 84 ns VDD = -15 V, RL = 1.5 Ω, ID -10 A, VGEN = -10 V, Rg = 1 Ω 2
Fall time tf 22 44 ns VDD = -15 V, RL = 1.5 Ω, ID -10 A, VGEN = -10 V, Rg = 1 Ω 2
Continuous source-drain diode current IS -4 A TC = 25 °C 2
Pulse diode forward current ISM -70 A 2
Body diode voltage VSD -0.78 -1.2 V IS = -5 A, VGS = 0 V 2
Body diode reverse recovery time trr 26 52 ns IF = -10 A, di/dt = 100 A/μs, TJ = 25 °C 2
Body diode reverse recovery charge Qrr 12 24 nC IF = -10 A, di/dt = 100 A/μs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: SI4425FDY-T1-GE3
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: si4425fdy-t1-ge3-etched.step / si4425fdy-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4425fdy-t1-ge3.step / si4425fdy-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 24b558ecf51b6872, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF