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SI4425FDY-T1-GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI4425FDY-T1-GE3
Vishay Intertech · MOSFETs · SO-8
SI4425FDY-T1-GE3 from Vishay Intertech, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET; the source-drain diode continuous current is rated at -4 A at TC = 25 °C with drain-source voltage VDS = -30 V. |
| 2 | S | passive | Source terminal of the P-channel MOSFET, bonded in parallel with pins 1 and 3; the device is rated for VDS = -30 V and pulsed drain current IDM = -70 A (t = 100 μs). |
| 3 | S | passive | Source terminal of the P-channel MOSFET, bonded in parallel with pins 1 and 2; the device is rated for VDS = -30 V and continuous drain current ID = -18.3 A at TC = 25 °C. |
| 4 | G | input | Gate terminal; the gate-source voltage must stay within the absolute maximum ratings of -20 V / +16 V. |
| 5 | D | passive | Drain terminal, electrically common with pins 6-8 and the drain tab; rated for VDS = -30 V and ID = -18.3 A at TC = 25 °C. |
| 6 | D | passive | Drain terminal, electrically common with pins 5, 7 and 8 and the drain tab; rated for VDS = -30 V and ID = -18.3 A at TC = 25 °C. |
| 7 | D | passive | Drain terminal, electrically common with pins 5, 6 and 8 and the drain tab; rated for VDS = -30 V and ID = -18.3 A at TC = 25 °C. |
| 8 | D | passive | Drain terminal, electrically common with pins 5-7 and the drain tab; rated for VDS = -30 V and ID = -18.3 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | -30 | V | TA = 25 °C, unless otherwise noted | 1 | ||
| Gate-source voltage | VGS | -20 | 16 | V | 1 | ||
| Continuous drain current | ID | -18.3 | A | TJ = 150 °C, TC = 25 °C | 1 | ||
| Continuous drain current | ID | -14.7 | A | TJ = 150 °C, TC = 70 °C | 1 | ||
| Continuous drain current | ID | -12.7 | A | TJ = 150 °C, TA = 25 °C, notes b, c | 1 | ||
| Continuous drain current | ID | -10.2 | A | TJ = 150 °C, TA = 70 °C, notes b, c | 1 | ||
| Pulsed drain current | IDM | -70 | A | t = 100 μs | 1 | ||
| Continuous source-drain diode current | IS | -4 | A | TC = 25 °C | 1 | ||
| Continuous source-drain diode current | IS | -1.9 | A | TA = 70 °C, notes b, c | 1 | ||
| Single pulse avalanche current | IAS | 15 | A | L = 0.1 mH | 1 | ||
| Single pulse avalanche energy | EAS | 11.25 | mJ | 1 | |||
| Maximum power dissipation | PD | 4.8 | W | TC = 25 °C | 1 | ||
| Maximum power dissipation | PD | 3.1 | W | TC = 70 °C | 1 | ||
| Maximum power dissipation | PD | 2.3 | W | TA = 25 °C, notes b, c | 1 | ||
| Maximum power dissipation | PD | 1.5 | W | TA = 70 °C, notes b, c | 1 | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering recommendations peak temperature | 260 | °C | notes d, e | 1 | |||
| Maximum junction-to-ambient | RthJA | 42 | 53 | °C/W | t ≤ 10 s, notes b, d | 1 | |
| Maximum junction-to-ambient (steady state) | RthJA | 90 | °C/W | Steady state, note d | 1 | ||
| Maximum junction-to-case (drain) | RthJF | 21 | 26 | °C/W | Steady state | 1 | |
| Drain-source breakdown voltage | VDS | -30 | V | VGS = 0 V, ID = -250 μA | 2 | ||
| Gate-source threshold voltage | VGS(th) | -1 | -2.2 | V | VDS = VGS, ID = -250 μA | 2 | |
| Gate-source leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = -20 V / +16 V | 2 | |
| Zero gate voltage drain current | IDSS | -1 | μA | VDS = -30 V, VGS = 0 V | 2 | ||
| Zero gate voltage drain current | IDSS | -10 | μA | VDS = -30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-state drain current | ID(on) | -10 | A | VDS -5 V, VGS = 10 V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.0077 | 0.0095 | Ω | VGS = -10 V, ID = -10 A | 2 | |
| Drain-source on-state resistance | RDS(on) | 0.0127 | 0.016 | Ω | VGS = -4.5 V, ID = -10 A | 2 | |
| Total gate charge | Qg | 27 | 41 | nC | VDS = -15 V, VGS = -10 V, ID = -10 A | 2 | |
| Total gate charge | Qg | 13 | 20 | nC | VDS = -15 V, VGS = -4.5 V, ID = -10 A | 2 | |
| Gate resistance | Rg | 4 | 10 | 17 | Ω | f = 1 MHz | 2 |
| Turn-on delay time | td(on) | 22 | 44 | ns | VDD = -15 V, RL = 1.5 Ω, ID -10 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Rise time | tr | 48 | 96 | ns | VDD = -15 V, RL = 1.5 Ω, ID -10 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Turn-off delay time | td(off) | 29 | 58 | ns | VDD = -15 V, RL = 1.5 Ω, ID -10 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Fall time | tf | 23 | 46 | ns | VDD = -15 V, RL = 1.5 Ω, ID -10 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Turn-on delay time | td(on) | 8 | 18 | ns | VDD = -15 V, RL = 1.5 Ω, ID -10 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Rise time | tr | 6 | 12 | ns | VDD = -15 V, RL = 1.5 Ω, ID -10 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Turn-off delay time | td(off) | 42 | 84 | ns | VDD = -15 V, RL = 1.5 Ω, ID -10 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Fall time | tf | 22 | 44 | ns | VDD = -15 V, RL = 1.5 Ω, ID -10 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Continuous source-drain diode current | IS | -4 | A | TC = 25 °C | 2 | ||
| Pulse diode forward current | ISM | -70 | A | 2 | |||
| Body diode voltage | VSD | -0.78 | -1.2 | V | IS = -5 A, VGS = 0 V | 2 | |
| Body diode reverse recovery time | trr | 26 | 52 | ns | IF = -10 A, di/dt = 100 A/μs, TJ = 25 °C | 2 | |
| Body diode reverse recovery charge | Qrr | 12 | 24 | nC | IF = -10 A, di/dt = 100 A/μs, TJ = 25 °C | 2 |
CAD (KiCad official)
- Symbol:
SI4425FDY-T1-GE3 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
si4425fdy-t1-ge3-etched.step/si4425fdy-t1-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si4425fdy-t1-ge3.step/si4425fdy-t1-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (9 pp, sha256
24b558ecf51b6872, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).