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SI4425DY

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UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI4425DY

UMW · MOSFETs · SOP-8

SI4425DY from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive SOURCE terminal of the -30 V P-channel MOSFET; carries the source current, with the source-drain diode rated at IS = -4.6 A (TC = 25°C) per the absolute maximum ratings.
2 S passive SOURCE terminal of the -30 V P-channel MOSFET, bonded in parallel with pins 1 and 3; rated for VDS = -30 V and VGS = ±20 V.
3 S passive SOURCE terminal of the -30 V P-channel MOSFET, bonded in parallel with pins 1 and 2; rated for VDS = -30 V and VGS = ±20 V.
4 G input GATE terminal of the P-channel MOSFET; gate-source voltage is rated at ±20 V (absolute maximum), with VGS(th) of -1 V to -3 V.
5 D passive DRAIN terminal of the -30 V P-channel MOSFET; continuous drain current ID is -11.6 A at TC = 25°C and -8.7 A at TA = 25°C (surface mounted on 1" x 1" FR4).
6 D passive DRAIN terminal of the -30 V P-channel MOSFET, bonded in parallel with pins 5, 7 and 8; shares the continuous drain current rating listed for pin 5.
7 D passive DRAIN terminal of the -30 V P-channel MOSFET, bonded in parallel with pins 5, 6 and 8; shares the continuous drain current rating listed for pin 5.
8 D passive DRAIN terminal of the -30 V P-channel MOSFET, bonded in parallel with pins 5, 6 and 7; shares the continuous drain current rating listed for pin 5.

Key specifications

Parameter Value
Manufacturer UMW
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V TA=25°C 1
Gate-Source Voltage VGS -20 20 V TA=25°C 1
Continuous Drain Current (TJ = 150 °C), TC=25°C ID -11.6 A TC=25°C 1
Continuous Drain Current (TJ = 150 °C), TC=70°C ID -10.5 A TC=70°C 1
Continuous Drain Current (TJ = 150 °C), TA=25°C ID -8.7 A TA=25°C, notes a,b 1
Continuous Drain Current (TJ = 150 °C), TA=70°C ID -7.7 A TA=70°C, notes a,b 1
Pulsed Drain Current IDM -40 A TA=25°C 1
Continuous Source-Drain Diode Current, TC=25°C IS -4.6 A TC=25°C 1
Continuous Source-Drain Diode Current, TA=25°C IS 2 A TA=25°C, notes a,b 1
Single Pulse Avalanche Current IAS -20 A 1
Single Pulse Avalanche Energy EAS 20 mJ L = 0.1 mH 1
Maximum Power Dissipation, TC=25°C PD 5.6 W TC=25°C 1
Maximum Power Dissipation, TC=70°C PD 3.6 W TC=70°C 1
Maximum Power Dissipation, TA=25°C PD 2.5 W TA=25°C, notes a,b 1
Maximum Power Dissipation, TA=70°C PD 1.6 W TA=70°C, notes a,b 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 °C 1
Drain-Source Breakdown Voltage V(BR)DSS -30 V VDS=0V, ID=-250μA 3
Gate-Source Threshold Voltage (min) VGS(th) -1 -3 V VDS=VGS, ID=-250μA 3
Gate-Source Leakage IGSS -100 100 nA VDS=0V, VGS=±25V 3
Zero Gate Voltage Drain Current IDSS -1 µA VDS=-30V, VGS=0V 3
Zero Gate Voltage Drain Current, TJ=55°C IDSS -5 µA VDS=-30V, VGS=0V, TJ=55°C 3
On-State Drain Current ID(ON) -30 A VDS≥-10V, VGS=-10V 3
Drain-Source On-State Resistance, VGS=-10V RDS(ON) 11 12.5 mΩ VGS=-10V, ID=-10A 3
Drain-Source On-State Resistance, VGS=-4.5V RDS(ON) 18 mΩ VGS=-4.5V, ID=-7A 3
Forward Transconductance gFS 23 S VDS=-10V, ID=-10A 3
VDS Temperature Coefficient ΔVDS/TJ -31 mV/°C ID=-250μA 3
VGS(th) Temperature Coefficient ΔVGS(th)/TJ 5.5 mV/°C 3
Input Capacitance Ciss 1960 pF VDS=-15V, VGS=0V, f=1MHz 3
Output Capacitance Coss 380 pF VDS=-15V, VGS=0V, f=1MHz 3
Reverse Transfer Capacitance Crss 325 pF VDS=-15V, VGS=0V, f=1MHz 3
Total Gate Charge, VGS=-10V Qg 43 nC VDS=-15V, VGS=-10V, ID=-10A 3
Total Gate Charge, VGS=-4.5V Qg 22 nC VDS=-15V, VGS=-4.5V 3
Gate Source Charge Qgs 6 nC ID=-10A 3
Gate Drain Charge Qgd 11 nC 3
Gate Resistance Rg 1.3 Ω f=1MHz 3
Turn-On Delay Time, VGEN=-10V tD(on) 11 ns VDD=-15V, RL=3Ω, ID≌-5A, VGEN=-10V, Rg=1Ω 3
Rise Time, VGEN=-10V tr 13 ns VDD=-15V, RL=3Ω, ID≌-5A, VGEN=-10V, Rg=1Ω 3
Turn-Off Delay Time, VGEN=-10V tD(off) 32 ns VDD=-15V, RL=3Ω, ID≌-5A, VGEN=-10V, Rg=1Ω 3
Fall Time, VGEN=-10V tf 9 ns VDD=-15V, RL=3Ω, ID≌-5A, VGEN=-10V, Rg=1Ω 3
Turn-On Delay Time, VGEN=-4.5V tD(on) 44 ns VDD=-15V, RL=3Ω, ID≌-5A, VGEN=-4.5V, Rg=1Ω 4
Rise Time, VGEN=-4.5V tr 100 ns VDD=-15V, RL=3Ω, ID≌-5A, VGEN=-4.5V, Rg=1Ω 4
Turn-Off Delay Time, VGEN=-4.5V tD(off) 28 ns VDD=-15V, RL=3Ω, ID≌-5A, VGEN=-4.5V, Rg=1Ω 4
Fall Time, VGEN=-4.5V tf 15 ns VDD=-15V, RL=3Ω, ID≌-5A, VGEN=-4.5V, Rg=1Ω 4
Body Diode Voltage VSD -0.75 -1.2 V IS=-2A, VGS=0V 4
Maximum Junction-to-Ambient, t≤10s RthJA 39 50 °C/W t ≤10s 2
Maximum Junction-to-Ambient, steady state RthJA 85 °C/W Steady-State (note c) 2
Maximum Junction-to-Foot, steady state RthJF 18 22 °C/W Steady-State 2

CAD (KiCad official)

  • Symbol: SI4425DY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: si4425dy-etched.step / si4425dy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4425dy.step / si4425dy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (9 pp, sha256 e6e7a108cdd8713d, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF