component
SI4425DY
Public Made by Adomby adom
UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI4425DY
UMW · MOSFETs · SOP-8
SI4425DY from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | SOURCE terminal of the -30 V P-channel MOSFET; carries the source current, with the source-drain diode rated at IS = -4.6 A (TC = 25°C) per the absolute maximum ratings. |
| 2 | S | passive | SOURCE terminal of the -30 V P-channel MOSFET, bonded in parallel with pins 1 and 3; rated for VDS = -30 V and VGS = ±20 V. |
| 3 | S | passive | SOURCE terminal of the -30 V P-channel MOSFET, bonded in parallel with pins 1 and 2; rated for VDS = -30 V and VGS = ±20 V. |
| 4 | G | input | GATE terminal of the P-channel MOSFET; gate-source voltage is rated at ±20 V (absolute maximum), with VGS(th) of -1 V to -3 V. |
| 5 | D | passive | DRAIN terminal of the -30 V P-channel MOSFET; continuous drain current ID is -11.6 A at TC = 25°C and -8.7 A at TA = 25°C (surface mounted on 1" x 1" FR4). |
| 6 | D | passive | DRAIN terminal of the -30 V P-channel MOSFET, bonded in parallel with pins 5, 7 and 8; shares the continuous drain current rating listed for pin 5. |
| 7 | D | passive | DRAIN terminal of the -30 V P-channel MOSFET, bonded in parallel with pins 5, 6 and 8; shares the continuous drain current rating listed for pin 5. |
| 8 | D | passive | DRAIN terminal of the -30 V P-channel MOSFET, bonded in parallel with pins 5, 6 and 7; shares the continuous drain current rating listed for pin 5. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | TA=25°C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA=25°C | 1 | |
| Continuous Drain Current (TJ = 150 °C), TC=25°C | ID | -11.6 | A | TC=25°C | 1 | ||
| Continuous Drain Current (TJ = 150 °C), TC=70°C | ID | -10.5 | A | TC=70°C | 1 | ||
| Continuous Drain Current (TJ = 150 °C), TA=25°C | ID | -8.7 | A | TA=25°C, notes a,b | 1 | ||
| Continuous Drain Current (TJ = 150 °C), TA=70°C | ID | -7.7 | A | TA=70°C, notes a,b | 1 | ||
| Pulsed Drain Current | IDM | -40 | A | TA=25°C | 1 | ||
| Continuous Source-Drain Diode Current, TC=25°C | IS | -4.6 | A | TC=25°C | 1 | ||
| Continuous Source-Drain Diode Current, TA=25°C | IS | 2 | A | TA=25°C, notes a,b | 1 | ||
| Single Pulse Avalanche Current | IAS | -20 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 20 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation, TC=25°C | PD | 5.6 | W | TC=25°C | 1 | ||
| Maximum Power Dissipation, TC=70°C | PD | 3.6 | W | TC=70°C | 1 | ||
| Maximum Power Dissipation, TA=25°C | PD | 2.5 | W | TA=25°C, notes a,b | 1 | ||
| Maximum Power Dissipation, TA=70°C | PD | 1.6 | W | TA=70°C, notes a,b | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | V | VDS=0V, ID=-250μA | 3 | ||
| Gate-Source Threshold Voltage (min) | VGS(th) | -1 | -3 | V | VDS=VGS, ID=-250μA | 3 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS=0V, VGS=±25V | 3 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS=-30V, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current, TJ=55°C | IDSS | -5 | µA | VDS=-30V, VGS=0V, TJ=55°C | 3 | ||
| On-State Drain Current | ID(ON) | -30 | A | VDS≥-10V, VGS=-10V | 3 | ||
| Drain-Source On-State Resistance, VGS=-10V | RDS(ON) | 11 | 12.5 | mΩ | VGS=-10V, ID=-10A | 3 | |
| Drain-Source On-State Resistance, VGS=-4.5V | RDS(ON) | 18 | mΩ | VGS=-4.5V, ID=-7A | 3 | ||
| Forward Transconductance | gFS | 23 | S | VDS=-10V, ID=-10A | 3 | ||
| VDS Temperature Coefficient | ΔVDS/TJ | -31 | mV/°C | ID=-250μA | 3 | ||
| VGS(th) Temperature Coefficient | ΔVGS(th)/TJ | 5.5 | mV/°C | 3 | |||
| Input Capacitance | Ciss | 1960 | pF | VDS=-15V, VGS=0V, f=1MHz | 3 | ||
| Output Capacitance | Coss | 380 | pF | VDS=-15V, VGS=0V, f=1MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 325 | pF | VDS=-15V, VGS=0V, f=1MHz | 3 | ||
| Total Gate Charge, VGS=-10V | Qg | 43 | nC | VDS=-15V, VGS=-10V, ID=-10A | 3 | ||
| Total Gate Charge, VGS=-4.5V | Qg | 22 | nC | VDS=-15V, VGS=-4.5V | 3 | ||
| Gate Source Charge | Qgs | 6 | nC | ID=-10A | 3 | ||
| Gate Drain Charge | Qgd | 11 | nC | 3 | |||
| Gate Resistance | Rg | 1.3 | Ω | f=1MHz | 3 | ||
| Turn-On Delay Time, VGEN=-10V | tD(on) | 11 | ns | VDD=-15V, RL=3Ω, ID≌-5A, VGEN=-10V, Rg=1Ω | 3 | ||
| Rise Time, VGEN=-10V | tr | 13 | ns | VDD=-15V, RL=3Ω, ID≌-5A, VGEN=-10V, Rg=1Ω | 3 | ||
| Turn-Off Delay Time, VGEN=-10V | tD(off) | 32 | ns | VDD=-15V, RL=3Ω, ID≌-5A, VGEN=-10V, Rg=1Ω | 3 | ||
| Fall Time, VGEN=-10V | tf | 9 | ns | VDD=-15V, RL=3Ω, ID≌-5A, VGEN=-10V, Rg=1Ω | 3 | ||
| Turn-On Delay Time, VGEN=-4.5V | tD(on) | 44 | ns | VDD=-15V, RL=3Ω, ID≌-5A, VGEN=-4.5V, Rg=1Ω | 4 | ||
| Rise Time, VGEN=-4.5V | tr | 100 | ns | VDD=-15V, RL=3Ω, ID≌-5A, VGEN=-4.5V, Rg=1Ω | 4 | ||
| Turn-Off Delay Time, VGEN=-4.5V | tD(off) | 28 | ns | VDD=-15V, RL=3Ω, ID≌-5A, VGEN=-4.5V, Rg=1Ω | 4 | ||
| Fall Time, VGEN=-4.5V | tf | 15 | ns | VDD=-15V, RL=3Ω, ID≌-5A, VGEN=-4.5V, Rg=1Ω | 4 | ||
| Body Diode Voltage | VSD | -0.75 | -1.2 | V | IS=-2A, VGS=0V | 4 | |
| Maximum Junction-to-Ambient, t≤10s | RthJA | 39 | 50 | °C/W | t ≤10s | 2 | |
| Maximum Junction-to-Ambient, steady state | RthJA | 85 | °C/W | Steady-State (note c) | 2 | ||
| Maximum Junction-to-Foot, steady state | RthJF | 18 | 22 | °C/W | Steady-State | 2 |
CAD (KiCad official)
- Symbol:
SI4425DY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
si4425dy-etched.step/si4425dy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si4425dy.step/si4425dy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (9 pp, sha256
e6e7a108cdd8713d, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).