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SI3590DV-T1-GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI3590DV-T1-GE3
Vishay Intertech · MOSFETs · TSOP-6
SI3590DV-T1-GE3 from Vishay Intertech, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of the N-channel MOSFET (Q1), with VGS limited to ±12 V. |
| 2 | S2 | passive | Source of the P-channel MOSFET (Q2), rated for VDS of -30 V. |
| 3 | G2 | input | Gate of the P-channel MOSFET (Q2), with VGS limited to ±12 V. |
| 4 | D2 | passive | Drain of the P-channel MOSFET (Q2), rated for VDS of -30 V and ID of -2 A (10 s). |
| 5 | S1 | passive | Source of the N-channel MOSFET (Q1), rated for VDS of 30 V. |
| 6 | D1 | passive | Drain of the N-channel MOSFET (Q1), rated for VDS of 30 V and ID of 3 A (10 s). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage (N-Ch) | VDS | 30 | V | 1 | |||
| Drain-source voltage (P-Ch) | VDS | -30 | V | 1 | |||
| Gate-source voltage (N-Ch) | VGS | -12 | 12 | V | 1 | ||
| Gate-source voltage (P-Ch) | VGS | -12 | 12 | V | 1 | ||
| Continuous drain current (N-Ch) | ID | 3 | A | TA = 25 °C, 10 s | 1 | ||
| Continuous drain current (N-Ch) | ID | 2.5 | A | TA = 25 °C, steady state | 1 | ||
| Continuous drain current (N-Ch) | ID | 2.3 | A | TA = 70 °C, 10 s | 1 | ||
| Continuous drain current (N-Ch) | ID | 2 | A | TA = 70 °C, steady state | 1 | ||
| Continuous drain current (P-Ch) | ID | -2 | A | TA = 25 °C, 10 s | 1 | ||
| Continuous drain current (P-Ch) | ID | -1.7 | A | TA = 25 °C, steady state | 1 | ||
| Continuous drain current (P-Ch) | ID | -1.6 | A | TA = 70 °C, 10 s | 1 | ||
| Continuous drain current (P-Ch) | ID | -1.3 | A | TA = 70 °C, steady state | 1 | ||
| Pulsed drain current (N-Ch) | IDM | 8 | A | 1 | |||
| Pulsed drain current (P-Ch) | IDM | -8 | A | 1 | |||
| Continuous source current (diode conduction) (N-Ch) | IS | 1.05 | A | 10 s | 1 | ||
| Continuous source current (diode conduction) (N-Ch) | IS | 0.75 | A | steady state | 1 | ||
| Continuous source current (diode conduction) (P-Ch) | IS | -1.05 | A | 10 s | 1 | ||
| Continuous source current (diode conduction) (P-Ch) | IS | -0.75 | A | steady state | 1 | ||
| Maximum power dissipation (N-Ch) | PD | 1.15 | W | TA = 25 °C, 10 s | 1 | ||
| Maximum power dissipation (N-Ch) | PD | 0.83 | W | TA = 25 °C, steady state | 1 | ||
| Maximum power dissipation (P-Ch) | PD | 1.15 | W | TA = 25 °C, 10 s | 1 | ||
| Maximum power dissipation (P-Ch) | PD | 0.83 | W | TA = 25 °C, steady state | 1 | ||
| Maximum power dissipation (N-Ch) | PD | 0.7 | W | TA = 70 °C, 10 s | 1 | ||
| Maximum power dissipation (N-Ch) | PD | 0.53 | W | TA = 70 °C, steady state | 1 | ||
| Maximum power dissipation (P-Ch) | PD | 0.7 | W | TA = 70 °C, 10 s | 1 | ||
| Maximum power dissipation (P-Ch) | PD | 0.53 | W | TA = 70 °C, steady state | 1 | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum junction-to-ambient (N-Ch) | RthJA | 93 | 110 | °C/W | t ≤ 10 s | 1 | |
| Maximum junction-to-ambient (N-Ch) | RthJA | 130 | 150 | °C/W | steady state | 1 | |
| Maximum junction-to-ambient (P-Ch) | RthJA | 93 | 110 | °C/W | t ≤ 10 s | 1 | |
| Maximum junction-to-ambient (P-Ch) | RthJA | 130 | 150 | °C/W | steady state | 1 | |
| Maximum junction-to-foot (drain) (N-Ch) | RthJF | 75 | 90 | °C/W | steady state | 1 | |
| Maximum junction-to-foot (drain) (P-Ch) | RthJF | 75 | 90 | °C/W | steady state | 1 | |
| Gate threshold voltage (N-Ch) | VGS(th) | 0.6 | 1.5 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate threshold voltage (P-Ch) | VGS(th) | -0.6 | -1.5 | V | VDS = VGS, ID = -250 μA | 2 | |
| Gate-body leakage (N-Ch) | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 12 V | 2 | |
| Gate-body leakage (P-Ch) | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 12 V | 2 | |
| Zero gate voltage drain current (N-Ch) | IDSS | 1 | μA | VDS = 30 V, VGS = 0 V | 2 | ||
| Zero gate voltage drain current (P-Ch) | IDSS | -1 | μA | VDS = -30 V, VGS = 0 V | 2 | ||
| On-state drain current (N-Ch) | ID(on) | 5 | A | VDS ≥ 5 V, VGS = 4.5 V | 2 | ||
| On-state drain current (P-Ch) | ID(on) | -5 | A | VDS ≤ -5 V, VGS = -4.5 V | 2 | ||
| Drain-source on-state resistance (N-Ch) | RDS(on) | 0.062 | 0.077 | Ω | VGS = 4.5 V, ID = 3 A | 2 | |
| Drain-source on-state resistance (P-Ch) | RDS(on) | 0.135 | 0.17 | Ω | VGS = -4.5 V, ID = -2 A | 2 | |
| Drain-source on-state resistance (N-Ch) | RDS(on) | 0.095 | 0.12 | Ω | VGS = 2.5 V, ID = 2 A | 2 | |
| Drain-source on-state resistance (P-Ch) | RDS(on) | 0.235 | 0.3 | Ω | VGS = -2.5 V, ID = -1.2 A | 2 | |
| Diode forward voltage (N-Ch) | VSD | 0.8 | 1.1 | V | IS = 1.05 A, VGS = 0 V | 2 | |
| Diode forward voltage (P-Ch) | VSD | -0.83 | -1.1 | V | IS = -1.05 A, VGS = 0 V | 2 | |
| Total gate charge (N-Ch) | Qg | 3 | 4.5 | nC | VDS = 15 V, VGS = 4.5 V, ID = 2 A | 2 | |
| Total gate charge (P-Ch) | Qg | 3.8 | 6 | nC | VDS = -15 V, VGS = -4.5 V, ID = -2 A | 2 | |
| Turn-on delay time (N-Ch) | td(on) | 5 | 8 | ns | VDD = 15 V, RL = 15, ID ≈ 1 A, VGEN = 10 V, Rg = 6 | 2 | |
| Turn-on delay time (P-Ch) | td(on) | 5 | 8 | ns | VDD = -15 V, RL = 15, ID ≈ -1 A, VGEN = -10 V, Rg = 6 | 2 | |
| Rise time (N-Ch) | tr | 12 | 23 | ns | 2 | ||
| Rise time (P-Ch) | tr | 15 | 23 | ns | 2 | ||
| Turn-off delay time (N-Ch) | td(off) | 13 | 23 | ns | 2 | ||
| Turn-off delay time (P-Ch) | td(off) | 20 | 30 | ns | 2 | ||
| Fall time (N-Ch) | tf | 7 | 12 | ns | 2 | ||
| Fall time (P-Ch) | tf | 20 | 30 | ns | 2 | ||
| Source-drain reverse recovery time (N-Ch) | trr | 15 | 25 | ns | IF = 1.05 A, di/dt = 100 A/μs | 2 | |
| Source-drain reverse recovery time (P-Ch) | trr | 18 | 30 | ns | IF = -1.05 A, di/dt = 100 A/μs | 2 |
CAD (KiCad official)
- Symbol:
SI3590DV-T1-GE3 - Footprint:
Package_SO:TSOP-6_1.65x3.05mm_P0.95mm - 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files:
si3590dv-t1-ge3-etched.step/si3590dv-t1-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si3590dv-t1-ge3.step/si3590dv-t1-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (13 pp, sha256
ca3ae2c3859cfa71, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).