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SI3457CDV-T1-GE3-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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{
"schema_version": 1,
"type": "component",
"slug": "si3457cdv-t1-ge3-vb",
"title": "SI3457CDV-T1-GE3-VB",
"brief": "VBsemi Elec MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
"version": "0.1.0",
"license": "CC-BY-SA-4.0",
"tags": [
"component",
"transistors-thyristors",
"si3457cdv-t1-ge3-vb",
"factory-2.0.0",
"extractor-text"
],
"component": {
"mpn": "SI3457CDV-T1-GE3-VB",
"manufacturer": "VBsemi Elec",
"package": "TSOP-6",
"pin_count": 6,
"category": "Transistors/Thyristors",
"subcategory": "MOSFETs",
"datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603059497690537984",
"parts": {
"symbol": "si3457cdv-t1-ge3-vb.kicad_sym",
"footprint": "si3457cdv-t1-ge3-vb.kicad_mod",
"model_3d": "si3457cdv-t1-ge3-vb-hero.glb",
"model_3d_plain": "si3457cdv-t1-ge3-vb-etched.glb",
"model_3d_step": "si3457cdv-t1-ge3-vb-etched.step",
"model_3d_step_plain": "si3457cdv-t1-ge3-vb.step",
"lbr": "si3457cdv-t1-ge3-vb.lbr"
},
"distributor_links": {
"lcsc": "C7463623"
},
"distributor_check": {
"checked_at": "2026-10-17T15:37:29Z",
"source": "Component Ocean /api/assign-pns",
"digikey": {
"pn": null,
"status": "quota"
},
"mouser": {
"pn": null,
"status": "quota"
}
},
"pins": [
{
"number": "1",
"name": "D",
"type": "passive",
"description": "Drain terminal of the P-channel MOSFET, rated VDS -30 V with continuous drain current ID -4.8 A at TC = 25 °C and -4.0 A at TA = 25 °C (surface mounted)."
},
{
"number": "2",
"name": "D",
"type": "passive",
"description": "Drain terminal of the P-channel MOSFET, rated VDS -30 V with continuous drain current ID -4.8 A at TC = 25 °C and -4.0 A at TA = 25 °C (surface mounted)."
},
{
"number": "3",
"name": "G",
"type": "input",
"description": "Gate terminal of the P-channel MOSFET, with gate-source voltage limited to ±20 V per the absolute maximum ratings."
},
{
"number": "4",
"name": "S",
"type": "passive",
"description": "Source terminal of the P-channel MOSFET; continuous source-drain diode current is rated -2.5 A at TC = 25 °C and -1.67 A at TA = 25 °C."
},
{
"number": "5",
"name": "D",
"type": "passive",
"description": "Drain terminal of the P-channel MOSFET, rated VDS -30 V with continuous drain current ID -4.8 A at TC = 25 °C and -4.0 A at TA = 25 °C (surface mounted)."
},
{
"number": "6",
"name": "D",
"type": "passive",
"description": "Drain terminal of the P-channel MOSFET, rated VDS -30 V with continuous drain current ID -4.8 A at TC = 25 °C and -4.0 A at TA = 25 °C (surface mounted)."
}
],
"provenance": {
"extractor": "extract_pins 0.3",
"factory_chain": {
"factory": "2.0.0",
"extractor": "extract_pins 0.3",
"primary_model": "claude-haiku-5-5",
"primary_mode": "text",
"consensus_model": "claude-sonnet-5-5",
"consensus": "agreed",
"guards": "pin_guards 0.1: passed",
"guard_notes": [
"extractor flagged: The datasheet's only pinout source is the TSOP-6 top-view figure with the connection map (4) S, (3) ; The datasheet does not give a separate pin-1 marker or orientation note beyond the top-view figure, "
],
"pages_sent": 9,
"cost_usd": 0.0379,
"at": "2026-10-17T15:34:20"
},
"datasheet": {
"url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603059497690537984",
"pages": 9,
"sha256": "3385961a796911a6",
"source_tier": "lcsc"
},
"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
"total": 6,
"described": 6,
"cites_pages": true,
"refuses_to_fabricate": true
}
},
"viewers": {
"symbol": "viewers/symbol.html",
"footprint": "viewers/footprint.html"
},
"models_3d": [
{
"file": "si3457cdv-t1-ge3-vb.step",
"role": "plain",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "z = 0",
"extents_mm": [
2.8,
3.05,
1.1
],
"zmin_mm": 0,
"centre_offset_mm": 0,
"footprint_binding": "identity",
"sha256": "1c9b13e7787bad69d987f81501759be5faaee754f4ad55aa7da0fc2259cdb0ff",
"checked": "2026-10-17",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
},
{
"file": "si3457cdv-t1-ge3-vb-etched.step",
"role": "eda",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "z = 0",
"extents_mm": [
2.8,
3.05,
1.1
],
"zmin_mm": 0,
"centre_offset_mm": 0,
"footprint_binding": "identity",
"sha256": "b04790ca7ed9332b2bb01bfe3e7154818a8eca420ddc3ac624988bb5c5b5d643",
"checked": "2026-10-17",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
}
]
},
"metadata": {
"specs": {
"Manufacturer": "VBsemi Elec",
"Package": "TSOP-6",
"Category": "Transistors/Thyristors",
"Pins": "6"
},
"characteristics": {
"version": 1,
"source": "datasheet",
"datasheet_sha256": "3385961a796911a652785b7c0e12a97b0bae96abe5331221ea1dd7fd387f5576",
"rows": [
{
"name": "Drain-Source Voltage",
"symbol": "VDS",
"kind": "absolute_maximum",
"unit": "V",
"min": -30,
"typ": null,
"max": null,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Gate-Source Voltage",
"symbol": "VGS",
"kind": "absolute_maximum",
"unit": "V",
"min": -20,
"typ": null,
"max": 20,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous Drain Current (TJ = 150 °C)",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": -4.8,
"typ": null,
"max": null,
"conditions": "TC = 25 °C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous Drain Current (TJ = 150 °C)",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": -4.1,
"typ": null,
"max": null,
"conditions": "TC = 70 °C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous Drain Current (TJ = 150 °C)",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": -4,
"typ": null,
"max": null,
"conditions": "TA = 25 °C; footnotes b, c",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous Drain Current (TJ = 150 °C)",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": -3.5,
"typ": null,
"max": null,
"conditions": "TA = 70 °C; footnotes b, c",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Pulsed Drain Current",
"symbol": "IDM",
"kind": "absolute_maximum",
"unit": "A",
"min": -20,
"typ": null,
"max": null,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous Source-Drain Diode Current",
"symbol": "IS",
"kind": "absolute_maximum",
"unit": "A",
"min": -2.5,
"typ": null,
"max": null,
"conditions": "TC = 25 °C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous Source-Drain Diode Current",
"symbol": "IS",
"kind": "absolute_maximum",
"unit": "A",
"min": -1.67,
"typ": null,
"max": null,
"conditions": "TA = 25 °C; footnotes b, c",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum Power Dissipation",
"symbol": "PD",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 3,
"conditions": "TC = 25 °C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum Power Dissipation",
"symbol": "PD",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 2,
"conditions": "TC = 70 °C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum Power Dissipation",
"symbol": "PD",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 1.3,
"conditions": "TA = 70 °C; footnotes b, c",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Operating Junction and Storage Temperature Range",
"symbol": "TJ, Tstg",
"kind": "absolute_maximum",
"unit": "°C",
"min": -55,
"typ": null,
"max": 150,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum Junction-to-Ambient, t ≤ 5 s",
"symbol": "RthJA",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": 55,
"max": 62.5,
"conditions": "t ≤ 5 s; footnotes b, d",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum Junction-to-Ambient, steady state",
"symbol": "RthJA",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": null,
"max": 110,
"conditions": "Steady state; per footnote d",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum Junction-to-Foot (Drain), steady state",
"symbol": "RthJF",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": 34,
"max": 41,
"conditions": "Steady state",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Drain-Source Breakdown Voltage",
"symbol": "VDS",
"kind": "electrical",
"unit": "V",
"min": -30,
"typ": null,
"max": null,
"conditions": "VGS = 0 V, ID = -250 µA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate-Source Threshold Voltage",
"symbol": "VGS(th)",
"kind": "electrical",
"unit": "V",
"min": -0.5,
"typ": null,
"max": -2,
"conditions": "VDS = VGS, ID = -250 µA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate-Source Leakage",
"symbol": "IGSS",
"kind": "electrical",
"unit": "nA",
"min": -100,
"typ": null,
"max": 100,
"conditions": "VDS = 0 V, VGS = ±20 V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Zero Gate Voltage Drain Current",
"symbol": "IDSS",
"kind": "electrical",
"unit": "µA",
"min": null,
"typ": null,
"max": -1,
"conditions": "VDS = -30 V, VGS = 0 V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Zero Gate Voltage Drain Current",
"symbol": "IDSS",
"kind": "electrical",
"unit": "µA",
"min": null,
"typ": null,
"max": -10,
"conditions": "VDS = -30 V, VGS = 0 V, TJ = 55 °C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "On-State Drain Current",
"symbol": "ID(on)",
"kind": "electrical",
"unit": "A",
"min": -20,
"typ": null,
"max": null,
"conditions": "VDS ≤ -5 V, VGS = -10 V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-Source On-State Resistance",
"symbol": "RDS(on)",
"kind": "electrical",
"unit": "Ω",
"min": null,
"typ": null,
"max": 0.049,
"conditions": "VGS = -10 V, ID = -4.1 A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-Source On-State Resistance",
"symbol": "RDS(on)",
"kind": "electrical",
"unit": "Ω",
"min": null,
"typ": null,
"max": 0.054,
"conditions": "VGS = -4.5 V, ID = -1.0 A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Total Gate Charge",
"symbol": "Qg",
"kind": "electrical",
"unit": "nC",
"min": null,
"typ": 10,
"max": 15,
"conditions": "VDS = -15 V, VGS = -10 V, ID = -4.1 A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Total Gate Charge",
"symbol": "Qg",
"kind": "electrical",
"unit": "nC",
"min": null,
"typ": 5.1,
"max": 8,
"conditions": "VDS = -15 V, VGS = -4.5 V, ID = -4.1 A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Turn-On Delay Time",
"symbol": "td(on)",
"kind": "timing",
"unit": "ns",
"min": null,
"typ": 40,
"max": 60,
"conditions": "VDD = -15 V, RL = 4.6 Ω, ID ≅ -3.3 A, VGEN = -4.5 V, Rg = 1 Ω",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Rise Time",
"symbol": "tr",
"kind": "timing",
"unit": "ns",
"min": null,
"typ": 80,
"max": 120,
"conditions": "VDD = -15 V, RL = 4.6 Ω, ID ≅ -3.3 A, VGEN = -4.5 V, Rg = 1 Ω",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Turn-Off Delay Time",
"symbol": "td(off)",
"kind": "timing",
"unit": "ns",
"min": null,
"typ": 20,
"max": 30,
"conditions": "VDD = -15 V, RL = 4.6 Ω, ID ≅ -3.3 A, VGEN = -4.5 V, Rg = 1 Ω",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Fall Time",
"symbol": "tf",
"kind": "timing",
"unit": "ns",
"min": null,
"typ": 12,
"max": 20,
"conditions": "VDD = -15 V, RL = 4.6 Ω, ID ≅ -3.3 A, VGEN = -4.5 V, Rg = 1 Ω",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Turn-On Delay Time",
"symbol": "td(on)",
"kind": "timing",
"unit": "ns",
"min": null,
"typ": 5,
"max": 10,
"conditions": "VDD = -15 V, RL = 4.6 Ω, ID ≅ -3.3 A, VGEN = -10 V, Rg = 1 Ω",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Rise Time",
"symbol": "tr",
"kind": "timing",
"unit": "ns",
"min": null,
"typ": 13,
"max": 20,
"conditions": "VDD = -15 V, RL = 4.6 Ω, ID ≅ -3.3 A, VGEN = -10 V, Rg = 1 Ω",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Fall Time",
"symbol": "tf",
"kind": "timing",
"unit": "ns",
"min": null,
"typ": 10,
"max": 15,
"conditions": "VDD = -15 V, RL = 4.6 Ω, ID ≅ -3.3 A, VGEN = -10 V, Rg = 1 Ω",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Body Diode Voltage",
"symbol": "VSD",
"kind": "electrical",
"unit": "V",
"min": null,
"typ": -0.8,
"max": -1.2,
"conditions": "IS = -3.3 A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Body Diode Reverse Recovery Time",
"symbol": "trr",
"kind": "electrical",
"unit": "ns",
"min": null,
"typ": 20,
"max": 30,
"conditions": "IF = -3.3 A, di/dt = 100 A/µs, TJ = 25 °C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Body Diode Reverse Recovery Charge",
"symbol": "Qrr",
"kind": "electrical",
"unit": "nC",
"min": null,
"typ": 20,
"max": 30,
"conditions": "IF = -3.3 A, di/dt = 100 A/µs, TJ = 25 °C",
"source_page": 2,
"source": "datasheet"
}
]
}
},
"variants": [],
"sections": [
"hero",
"viewers",
"readme",
"breadcrumbs",
"info"
],
"discovery_triggers": [
"si3457cdv-t1-ge3-vb"
],
"discovery_pitch": "SI3457CDV-T1-GE3-VB (VBsemi Elec) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
"author": {
"name": "Ray",
"email": "[email protected]"
},
"dependencies": {},
"hero": {
"type": "image",
"path": "docs/hero.png"
},
"files": [
"page.json",
"README.md",
"si3457cdv-t1-ge3-vb.kicad_sym",
"si3457cdv-t1-ge3-vb.kicad_mod",
"si3457cdv-t1-ge3-vb.glb",
"si3457cdv-t1-ge3-vb.step",
"si3457cdv-t1-ge3-vb.lbr",
"docs/hero.png",
"docs/si3457cdv-t1-ge3-vb-datasheet.pdf",
"viewers/symbol.html",
"viewers/footprint.html",
"si3457cdv-t1-ge3-vb-hero.glb",
"si3457cdv-t1-ge3-vb-hero.overlay.json",
"si3457cdv-t1-ge3-vb-etched.glb"
],
"visibility": {
"public": true
}
}